SBIR Phase I: Band-gap Sensor for Wafer Temperature Mapping During Epitaxial Growth

该小型企业创新研究第一阶段项目将开发一种成像仪器，用于测量分子束外延（MBE）处理期间在砷化镓（GaAs）或磷化铟（InP）衬底上生长的外延晶片的温度分布。许多世界级的公司都参与了砷化镓制造，以瞄准无线卫星和光纤通信市场。 随着制造设施采用更大（6 '）和多晶片处理技术，温度均匀性控制的重要性变得越来越关键。 高的温度均匀性是实现外延层的电学和光学质量所必需的，并且衬底温度是外延生长过程中的关键工艺参数之一。模型将开发的仪器和它的应用GaAs温度监测。 将设计和建造一个原型。 仪器的响应将在炉中检验。 将确定与分子束外延室的详细设计有关的额外要求，以初步评估系统集成作为实时过程控制监测器的可行性。 这项技术将为MBE和金属有机气相外延（MOVPE）工艺开发人员提供一种工具，以确定新工艺室中产生的温度均匀性。 在过去的三十年中，化合物半导体已经从研究实验室和利基军事应用发展到无线，卫星和光纤通信的大批量商业应用。 由于90年代需求的快速增长，晶圆尺寸已从2“增加到4”，目前6“晶圆制造线正在世界各地的许多设施中引入。

This Small Business Innovation Research Phase I project will develop an imaging instrument to measure the temperature distribution in epitaxial wafers grown on Galium Arsenide, GaAs, or Indium Phosphide, InP, substrates during Molecular Beam Epitaxy (MBE) processing. Many world class companies are involved in GaAs manufacturing to target the wireless satellite and fiber optic communication market. As fabrication facilities incorporate larger (6') and multiple wafer processing technology, the importance of temperature uniformity control becomes an increasingly critical issue. High temperature uniformity is required to achieve electrical and optical quality of the epilayer and substrate temperature is one of the key process parameters during epitaxial growth. Models will be developed of the instrument and its application to GaAs temperature monitoring. A prototype will be designed and constructed. The response of the instrument will be examined in a furnace. Additional requirements related to the detailed design of MBE chambers will be identified to establish a preliminary assessment of the feasibility of system integration as a monitor for real-time process control. This technology will provide MBE and Metal-Organic Vapor Phase Epitaxy (MOVPE) process developers with a tool to determine the temperature uniformity produced in new process chambers. Over the past three decades, compound semiconductors have evolved from research laboratories and niche military applications to high volume commercial applications in wireless, satellite and fiber optic communications. As a result of the rapid increase in demand in the 90's, the wafer size has increased from 2' to 4', and currently 6' wafer fabrication lines are being introduced in a number of facilities across the world.