NIRT: Self-Aligned and Self-Limited Quantum Dot Nanoswitches
NIRT: Self-Aligned and Self-Limited Quantum Dot Nanoswitches
批准号:
0103248
负责人:
Paul Berger
金额:
$0.0万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2001
资助国家:
美国
项目状态:
已结题
起止时间:
2001-07-01 至 2007-03-31
中文摘要
这项提案是应“纳米科学与工程”(NSF 00-119)的征集而提交的。该项目致力于通过对Si/SiGe/Si纳米结构柱子的联合氧化和刻蚀来制造量子级器件。该项目旨在通过开发一种工艺技术来制造大小、形状和位置可预测的量子点,适合大规模生产和简单的电接触,从而证明纳米计算的有效性。该项目包括具体的战略和过程,以控制纳米结构柱子的大小和组成,以及由此形成的量子点和氧化物绝缘体。这项研究横跨材料科学、电路以及器件制造和表征等问题;待制造的结构与细胞自动机电路所需的量子能级器件紧密结合。包括用于表征器件的高速测试方法以及用于优化结构设计的理论建模。该项目是俄亥俄州立大学、伊利诺伊州、圣母大学、加州大学河滨分校、海军研究实验室和空军研究实验室高度合作的项目。%该项目解决了材料科学中具有高度技术相关性的主题领域的基础研究问题。该计划的一个重要特点是通过在一个具有根本意义和技术意义的领域对学生进行培训,将研究和教育结合起来。该项目汇集了电气工程师、材料科学家、物理学家、计算机科学家、实验学家和理论家,目的是实现先进的纳米结构量子点设备。该项目旨在通过由前沿研究环境提供的独特教育体验,培养学生强大的技术、沟通和组织/管理技能。本科生将积极参与该项目,重点是培养有效的口头和书面交流技能。跨学科研究和实地考察将促进教育进程。该项目由DMR/EM和ECS/EPDT部门/方案共同支持。*
英文摘要
This proposal was submitted in response to the solicitation "Nanoscale Science and Engineering" (NSF 00-119). The project addresses the fabrication of quantum scale devices through the combined oxidation and etching of Si/SiGe/Si nanostructured pillars. The project aims to demonstrate the validity of nanoscale computing by developing a process technology to fashion quantum dots of a predictable size, shape and placement, suitable for mass production and simple electrical contact. The project includes specific strategies and processes to control the size and composition of the nanostructured pillars and the resulting quantum dots and oxide insulators to be formed. The research spans issues of materials science, circuits, and device fabrication and characterization; the structures to be fabricated are closely integrated with quantum level devices necessary for cellular automata circuits. Methods of high speed testing to characterize the devices as well as theoretical modeling to optimally design the structures are included. The project is highly collaborative between Ohio State, Illinois, Notre Dame, UC Riverside, the Naval Research Laboratory and Air Force Research Laboratory. %%% The project addresses basic research issues in a topical area of materials science with high technological relevance. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. The project brings together electrical engineers, material scientists, physicists, computer scientists, experimentalists, and theoreticians for the purpose of realizing advanced nanostructured quantum dot devices. The project is designed to develop strong technical, communication, and organizational/management skills in students through unique educational experiences made possible by a forefront research environment. There will be active involvement of undergraduates in the program with an emphasis on developing effective oral and written communication skills. Cross-disciplinary research and site visits to each other will enhance the educational process. The project is co-supported by the DMR/EM and ECS/EPDT Divisions/Programs.***
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