CAREER: Super Junction Power Semiconductor Devices
CAREER: Super Junction Power Semiconductor Devices
批准号:
0237420
负责人:
Zheng Shen
金额:
$40.0万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2003
资助国家:
美国
项目状态:
已结题
起止时间:
2003-07-01 至 2004-10-31
中文摘要
在过去的二十年中,功率半导体技术的进步已经导致功率电子器件迅速扩散到电信、计算机、消费者、运输、工业应用以及所有形式的环境友好型能量转换。然而,最先进的功率半导体器件的性能正在迅速接近硅的理论极限。本CAREER提案旨在研究一种称为超级结(SJ)的创新器件概念,该概念能够以数量级提高传统硅功率器件的功率处理能力,并有效地将研究与教育活动相结合。本研究计划有五个目标:(1)透过广泛的元件模拟与模拟,研究新颖的超结MOSFET结构,克服目前元件设计与制作方法的限制:(2)将高深宽比MEMS技术与传统平面DMOS制程结合,发展实用的SJ制程;(3)将基本的超结概念扩展到其他器件类型,包括高压、快速恢复肖特基续流二极管;(4)研究SJ器件独特特性所固有的电路应用问题,如电磁干扰(EMI)和安全工作区(SOA)降解;以及(5)将超结概念扩展到SiC和其它宽带隙半导体材料。拟议的研究的独特贡献是在新的超级结器件和加工概念的共同发展; MEMS和DMOS技术的集成;材料,加工,器件和电路的综合研究;建模和实验手段的交互使用;和密切的大学-工业伙伴关系。拟议研究的结果将大大推进功率半导体和电力电子领域的知识,并为下一代高效率,低成本,重量轻,和紧凑型电力电子技术,以满足社会对节能和环保的需求。电力电子技术的迅速发展将产生对电力电子技术的巨大需求,美国的电气工程师。教育计划满足了这些新出现的需求。CAREER教育计划的主要目标是将拟议的研究纳入现有的电力电子和固态电子课程。它由五个部分组成:(1)开发新课程,以满足电力电子领域新兴的教育需求;(2)通过将研究材料纳入讲座和项目,改进和丰富现有课程;(3)通过学生参与研究,将研究与教学结合起来;(4)指导学生,特别是女性和代表性不足的少数民族学生,并提供社区服务,及(5)促进学生与业界的紧密互动。拟议的教育计划将有助于满足人力资源发展的新需求,并大大加强大学的研究和教育基础设施。学生辅导和社区外展活动将扩大代表性不足的少数群体对科学和工程的参与。
英文摘要
Advances in power semiconductor technology in the past two decades have led to the rapid proliferation of power electronics into telecommunications, computers, consumer, transportation, industrial applications, and all forms of environment-friendly energy conversion. However, the performance of state of the art power semiconductor devices is quickly approaching the theoretical limits of silicon. This CAREER proposal aims to investigate an innovative device concept termed super junction (SJ) that is capable of improving the power handling capability of conventional silicon power devices by orders of magnitude, and effectively integrate the research with education activities. The research project has five objectives: (1) to investigate novel super-junction MOSFET structures through extensive device modeling and simulation, which overcome the limitations of the current device design and fabrication methods; (2) to develop a practical SJ fabrication process by integrating the high aspect ratio MEMS techniques with conventional planar DMOS processes; (3) to extend the basic super-junction concept into other device types including the high voltage, fast-recovery Schottky freewheeling diode; (4) to study circuit application issues that are inherent to the unique characteristics of SJ devices such as electromagnetic interference (EMI) and safe operating area (SOA) degradation; and (5) to extend the super-junction concept to SiC and other wide bandgap semiconductor materials. The unique contribution of the proposed research is in the co-development of novel super-junction device and processing concepts; the integration of MEMS and DMOS technologies; the integrated study of material, processing, device, and circuit; the interactive use of modeling and experimental means; and the close university-industry partnership. The outcome of the proposed research will significantly advance knowledge in the field of power semiconductors and power electronics and provide a foundation for the next-generation, high-efficiency, low-cost, light-weight, and compact power electronics technology to meet the society's needs in conserving energy and environments.The rapid proliferation of power electronics will generate a serious demand for power-electronics-proficient electrical engineers in the United States. The education plan addresses these emerging needs. The primary goal of the CAREER education plan is to integrate the proposed research into the existing power electronics and solid-state electronics curriculum. It consists of five components: (1) developing new courses to meet the emerging educational needs in power electronics, (2) improving and enriching existing courses by incorporating research materials into lectures and projects, (3) integrating research and teaching through student participation in research, (4) mentoring students, especially women and underrepresented minority students, and providing community services, and (5) facilitating close interaction between students and industry. The proposed education plan will help meet the emerging demand for human resource development and significantly enhance the university's research and education infrastructure. The student mentoring and community outreaching activities will broaden the participation of underrepresented minority groups in science and engineering.
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Scalable Multilevel Multicell Power Architectures Leveraging Cost Effective GaN Power IC Technology
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批准号:1711485
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项目类别:Standard Grant
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资助金额:$36.0万
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财政年份:2017
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负责人:Zheng Shen
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依托单位:
US-Ireland Collaborative Research on Nanostructured Gallium Nitride (GaN) Power Semiconductor Devices
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批准号:1407540
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项目类别:Standard Grant
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资助金额:$42.76万
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财政年份:2014
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负责人:Zheng Shen
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依托单位:
CAREER: Super Junction Power Semiconductor Devices
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批准号:0454835
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项目类别:Standard Grant
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资助金额:$0.0万
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财政年份:2004
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负责人:Zheng Shen
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批准号:0126677
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项目类别:Standard Grant
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资助金额:$5.07万
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财政年份:2002
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负责人:Zheng Shen
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依托单位:
国内基金
海外基金
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