Raman, Brillouin, Infrared and Modulation Spectroscopy of Collective and Localized Excitations in Tetrahedrally Coordinated Semiconductors and Their Heterostructures

该项目致力于通过各种光学（光谱）技术对四面体配位半导体及其异质和纳米结构中的集体和局部激发进行实验和理论研究。该研究将集中在这些材料中产生的新现象和独特性能，通过故意引入化学杂质作为供体和受体，或作为等电子和磁性成分。本文将研究同位素控制的金刚石、硅和锗的电子性质。该计划将探索和描绘金刚石中施主束缚电子和受主束缚空穴的电子状态，在III-V和III-VI磁性（自旋电子）多元体和黄铜矿中，从III-V和II-VI半导体中衍生。集体和本地化的电子和振动态将在这些半导体和它们的纳米结构与磁和压电光谱研究。参加该计划的研究生和本科生将获得拉曼，布里渊，红外和调制反射率/透射光谱应用于当前半导体物理前沿领域的问题的技能，并在此过程中，接受培训，为企业，工业和政府的职业生涯。提出的研究涉及几种光学技术在先进半导体材料的行为和性能方面的应用。这些材料在当前技术中发挥着重要作用，并具有重大应用的前景和潜力。基于宽带隙、超硬半导体（如金刚石）的高温/大功率电子器件;新一代固态电子器件，其中使用自旋电子材料开发自旋极化电荷载流子;通过故意引入特定杂质或通过控制同位素组成来操纵半导体特性：这些都是半导体物理及其未来应用中令人兴奋和智力挑战的例证。该计划的参与者-研究生和博士后研究助理-将获得学术界，国家实验室以及光电子行业研发的多方面专业知识。

This project is devoted to the experimental and theoretical investigation of collective and localized excitations in tetrahedrally coordinated semiconductors and their hetero-and nanostructures by a variety of optical (spectroscopic) techniques. The research will focus on novel phenomena and unique properties produced in these materials by the deliberate introduction of chemical impurities as donors and acceptors, or as isoelectronic and magnetic constituents. Electronic properties of isotopically controlled diamond, Si and Ge will be investigated. The program will explore and delineate the electronic states of donor-bound electrons and acceptor-bound holes in diamond, in III-V and III-VI magnetic (spintronic) multinaries and in chalcopyrites, genealogically derived from III-V and II-VI semiconductors. Collective and localized electronic and vibrational states will be investigated in these semiconductors and their nanostructures with magneto- and piezo-spectroscopy. Graduate students and undergraduate students participating in the program will acquire skills in Raman, Brillouin, infrared and modulated reflectivity/transmission spectroscopy applied to issues at the forefront areas in current semiconductor physics and, in the process, be trained for careers in academe, industry, and government. Research proposed deals with applications of several optical techniques to the behavior and properties of advanced semiconductor materials. These materials play a significant role in the current technology and hold the promise and potential for significant applications. High temperature/high power electronic devices based on wideband gap, ultra hard semiconductors, e.g. diamond; new generations of solid state electronics in which spin-polarized charge carriers are exploited using spintronic materials; the manipulation of semiconductor properties by the deliberate introduction of specific impurities or by controlling the isotopic composition: These are illustrative examples of the excitement and intellectual challenges in the physics of semiconductors and their future applications. Participants in the program - graduate students and postdoctoral research associates - will acquire versatile expertise for careers in academia, national laboratories as well as in research and development in the opto-electronics industry.