Inorganic and Organic Thin Film and Interface Studies
Inorganic and Organic Thin Film and Interface Studies
批准号:
0405326
负责人:
Eugene Irene
金额:
$35.73万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2004
资助国家:
美国
项目状态:
已结题
起止时间:
2004-07-01 至 2008-06-30
中文摘要
该项目体现了对在电子/光子学中具有技术意义的无机和有机界面的基础材料科学研究。基于前人关于硅氧化和氮化的关键微电子学反应以及二氧化硅覆盖的硅上的有机聚合物薄膜聚邻甲氧基苯胺(POMA)的研究结果,本研究扩展到包括与高介电常数(K)绝缘体、铁电和压电体相关的复杂无机氧化物界面,并将选定的p型半导体有机薄膜与稳定的n型有机半导体相结合,以制备和表征由新型界面制成的原型器件结构。材料科学的基本问题是了解界面反应的性质和程度,然后评估界面的化学/物理性质对由表征良好的界面确定的界面电子性质的影响。研究策略是通过原位实时椭偏测量法以及其他原位实时表征方法实时跟踪界面形成的演变,以提供化学成分、结构和光学性质的评估。将包括界面敏感表征技术,如光谱浸没椭圆偏振法、分形分析和Fowler-Nordheim隧道电流振荡。将使用几种界面和薄膜制备方法:无机界面的热和离子溅射,以及有机薄膜的化学和电化学溶液方法。%该项目解决了材料科学中具有高度技术相关性的主题领域的基础研究问题。这一研究课题,特别是与高介电常数和铁电材料形成的界面,以及新兴的有机电子材料领域,对未来纳米电子学的发展至关重要。该项目的一个重要特点是,通过在一个具有根本意义和技术意义的领域对学生进行培训,将研究和教育结合起来。这项研究活动提供与工业相关的研究领域的研究生、本科生和博士后的培训。这项研究是与参与者合作进行的,参与者包括来自北卡罗来纳大学和詹姆斯·麦迪逊大学的大学生(拥有ROA的B.Augustine教授)、国家实验室合作者(ANL的O.Auciello博士)和一位小企业主(Ionwerks Inc.的A.Schultz博士)。参与者分享他们不同的观点,学生在不同的专业环境中获得经验,研究成果可以很容易地在行业和政府中实施。学生们还将能够参与在ANL正在进行的新的国家纳米材料中心(CNM)进行的研究。国际学生联合会已经成功地从任职人数不足的群体中招聘了学生并使其毕业,并将继续这样做。预计所有参与的学生都将在学位期间在国际会议上发表演讲,并在被推荐的国际期刊上发表过几篇论文。
英文摘要
This project embodies a fundamental materials science study of inorganic and organic interfaces that have technological significance in electronics/photonics. Building on results of previous studies that focused on key microelectronics reactions of oxidation and nitridation of Si and the organic polymer film poly o-methoxyaniline (POMA) on SiO2 covered Si, this research is extended to include complex inorganic oxide interfaces that have relevance for high dielectric constant (K) insulators, and for ferroelectrics and piezoelectrics, and to combine selected organic films that are p-type semiconductors with stable n-type organic semiconductors to fabricate and characterize prototype device structures made from novel interfaces. The fundamental materials science issue is to understand the nature and extent of interface reactions and then to assess the impact of the chemical/physical nature of the interface with resultant interfacial electronic properties as determined from well-characterized interfaces. The research strategy is to follow the evolution of interface formation in real time via in situ real-time ellipsometry as well as other situ real-time characterization methodologies to provide assessments of chemical composition, structure and optical properties. Interface sensitive characterization techniques such as spectroscopic immersion ellipsometry, fractal analysis, and Fowler-Nordheim tunnel current oscillations will be included. Several interface and thin film preparation processes will be utilized: thermal, and ion sputtering for inorganic interfaces and chemical and electrochemical solution methods for organic films. %%% The project addresses basic research issues in a topical area of materials science with high technological relevance. The research topic, specifically interfaces formed with high dielectric constant and ferroelectric materials, and the emerging field of organic electronic materials is critical to future progress in nanoscale electronics. An important feature of the project is the integration of research and education through the training of students in a fundamentally and technologically significant area. This research activity provides training of graduate and undergraduate students and post doctorals in an industrially relevant area of research. The research is collaborative with participants that include university students from the University of North Carolina and James Madison University (Prof. B. Augustine with an ROA), national laboratory collaborator (Dr. O. Auciello at ANL), and a small business owner (Dr. A. Schultz of Ionwerks Inc.). Participants share their differing perspectives, students get experience in different professional environments, and research results can be readily implemented in industry and government. Students will also be able to participate in research conducted in the new National Center for Nanomaterials (CNM) in progress at ANL. The PI has successfully recruited and graduated students from underrepresented groups, and will continue to do so. It is anticipated that all participating students will have made presentations at international meetings during their degree time and will have published several papers in refereed international journals.***
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
Inorganic and Organic Thin Film Interface Studies
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批准号:0101231
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项目类别:Continuing Grant
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资助金额:$31.54万
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财政年份:2001
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负责人:Eugene Irene
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依托单位:
GOALI: In-Situ Real-Time Studies of Complex Oxide Thin Film Processes and Interfaces
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批准号:9986682
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项目类别:Standard Grant
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资助金额:$41.94万
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财政年份:2000
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负责人:Eugene Irene
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依托单位:
Thin Film Growth, Deposition and Interface Studies under Energetic Process Conditions
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批准号:9633731
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项目类别:Continuing Grant
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资助金额:$29.83万
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财政年份:1997
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负责人:Eugene Irene
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依托单位:
NSF/ONR: Growth of High Temperature Superconducting Thin Films and Heterostructure Interfaces
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批准号:9422182
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项目类别:Continuing Grant
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资助金额:$24.6万
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财政年份:1995
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负责人:Eugene Irene
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依托单位:
U.S.-France Cooperative Research: Plasma Processes in Microelectronics Materials Preparation
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批准号:9115805
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项目类别:Standard Grant
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资助金额:$1.48万
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财政年份:1992
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负责人:Eugene Irene
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依托单位:
Thin Films Growth and Deposition Studies under Energetic Conditions: Ion Beams and Electron Cyclotron Resonance Plasmas
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批准号:9200723
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项目类别:Continuing Grant
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资助金额:$22.5万
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财政年份:1992
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负责人:Eugene Irene
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依托单位:
海外基金