ARI-MA Collaborative Research: - High Z Materials for Nuclear Detection: Synergy of Growth, Characterization and Device Physics for Room Temperature Devices
ARI-MA Collaborative Research: - High Z Materials for Nuclear Detection: Synergy of Growth, Characterization and Device Physics for Room Temperature Devices
批准号:
0833007
负责人:
Nancy Haegel
金额:
$5.6万
依托单位国家:
美国
项目类别:
Interagency Agreement
财政年份:
2008
资助国家:
美国
项目状态:
已结题
起止时间:
2008-09-15 至 2009-08-31
中文摘要
ARI-MA:合作研究:用于核探测的高Z材料:生长,表征和室温器件缺陷物理的协同作用本研究的目的是开发用于室温核探测器件的新型高密度薄膜,并了解控制其性能的基本电荷收集机制。该方法是晶体生长、材料表征和器件物理的协同耦合。目标是结合材料科学、物理和工程方面的专业知识,在具有高停止能力的复杂氧化物应用方面取得潜在突破,以实现经济有效的核探测能力。这项工作的智力价值将是为识别新的候选材料开发一个基本框架,再加上下一代设备所需的表征工具和小型化电子设备的开发。这项工作将利用具有可调谐电子特性的复杂功能氧化物材料领域的重大突破。更广泛的影响将是对国家核扫描能力基础设施和人力资本发展的贡献。研究生和本科生将在这个高度跨学科的领域接受教育,学生招聘将利用现有的项目来增强加州大学伯克利分校和海军研究生院(NPS)的多样性。与NPS国土防御和安全中心合作的外展部分也包括在内。这将提供高质量的材料,教育地方和州官员以及其他急救人员了解当前和未来核威胁探测技术的可用性、局限性和潜在影响。
英文摘要
ARI-MA: Collaborative Research: High Z Materials for Nuclear Detection: Synergy of Growth, Characterization and Defect Physics for Room Temperature DevicesThe objective of this research is to develop novel high density thin films for application as room temperature nuclear detection devices and to understand the basic charge collection mechanisms that would govern their performance. The approach is a synergistic coupling of crystal growth, materials characterization and device physics. The goal is to combine expertise in materials science, physics and engineering for potential breakthroughs in the application of complex oxides with high stopping power to achieve cost-effective nuclear detection capability.The intellectual merit of the work will be the development of a fundamental framework for the identification of new candidate materials, coupled with development of the characterization tools and miniaturized electronics required for next generation devices. The work will leverage significant recent breakthroughs in the field of complex functional oxide materials with tunable electronic properties.The broader impact will be in the contribution to national infrastructure for nuclear scanning capability and in the development of human capital. Graduate and undergraduate students will be educated in this highly interdisciplinary field and student recruitment will leverage existing programs to enhance diversity at UC Berkeley and the Naval Postgraduate School (NPS). An outreach component is also included in collaboration with the NPS Center for Homeland Defense and Security. This will provide high-quality materials to educate local and state officials, and other first responders, on the availability, limitations and potential impact of current and future technologies for nuclear threat detection.
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Collaborative Research: Transport Imaging of Semiconductor Nanowires
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批准号:0804527
-
项目类别:Interagency Agreement
-
资助金额:$20.99万
-
财政年份:2008
-
负责人:Nancy Haegel
-
依托单位:
IMR: Development of an Imaging Transport Instrument for Materials Research and Education
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批准号:0526330
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项目类别:Continuing Grant
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资助金额:$28.8万
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财政年份:2005
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负责人:Nancy Haegel
-
依托单位:
POWRE: Imaging Near-Contact Transport in High Resistivity Semiconductors
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批准号:9720485
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项目类别:Standard Grant
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资助金额:$6.65万
-
财政年份:1998
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负责人:Nancy Haegel
-
依托单位:
Presidential Young Investigator Award
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批准号:9496119
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项目类别:Continuing Grant
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资助金额:$3.82万
-
财政年份:1993
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负责人:Nancy Haegel
-
依托单位:
Development of a Scanning Electron Microscope Based Microcharacterization Facility
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批准号:9112979
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项目类别:Standard Grant
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资助金额:$10.4万
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财政年份:1991
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负责人:Nancy Haegel
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依托单位:
Engineering Creativity Award for Mathew Wilson
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批准号:9021051
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项目类别:Continuing Grant
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资助金额:$9.0万
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财政年份:1990
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负责人:Nancy Haegel
-
依托单位:
Presidential Young Investigator Award
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批准号:8957215
-
项目类别:Continuing Grant
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资助金额:$31.52万
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财政年份:1989
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负责人:Nancy Haegel
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依托单位:
Research Experience For Undergraduates (REU): Preparation and Properties of Electronic Materials
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批准号:8901019
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项目类别:Standard Grant
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资助金额:$1.9万
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财政年份:1989
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负责人:Nancy Haegel
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依托单位:
Engineering Creativity Award: Optoelectronic Multilayer Characterization
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批准号:8811578
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项目类别:Standard Grant
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资助金额:$5.39万
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财政年份:1988
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负责人:Nancy Haegel
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依托单位:
ROW Research Initiation: Space Charge Phenomena in High Resistivity Semiconductors
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批准号:8809298
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项目类别:Continuing Grant
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资助金额:$6.0万
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财政年份:1988
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负责人:Nancy Haegel
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依托单位:
Transient Electrical and Optical Behavior of High Resistivity Semiconductors (Materials Research)
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批准号:8707372
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项目类别:Standard Grant
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资助金额:$1.2万
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财政年份:1987
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负责人:Nancy Haegel
-
依托单位:
国内基金
海外基金
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