Growths of High In-Content InGaN and InN Semiconductors for Energy Applications
Growths of High In-Content InGaN and InN Semiconductors for Energy Applications
批准号:
0907260
负责人:
Nelson Tansu
金额:
$32.96万
依托单位:
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2009
资助国家:
美国
项目状态:
已结题
起止时间:
2009-09-01 至 2013-08-31
中文摘要
技术支持:该项目探讨了用于高效太阳能电池和热电应用的高铟含量InGaN和InN半导体的材料科学。将进行在蓝宝石和硅(111)衬底上生长InN和高In含量InGaN(In 50%)合金的金属有机化学气相沉积(MOCVD)的基础研究。研究包括使用替代前体(二甲基肼),脉冲MOCVD,InN-GaN超晶格沿着各种类型的表征,以评估太阳能电池和热电应用的潜力,并进一步了解p-InN和p-InGaN半导体的掺杂机制。非技术:该项目涉及具有高技术相关性的材料科学主题领域的基础研究问题。高效太阳能光伏电池通过更高效的发电对经济和人类生活具有广泛的潜在影响。热电材料为设备冷却和热回收以及发电提供了重要的解决方案。该项目允许研究生和本科生在多学科研究环境中接受培训,包括半导体物理,光电子材料和器件,材料科学和MOCVD外延,半导体纳米结构物理以及半导体器件设计和制造。研究生还担任指导本科生在PI的实验室进行独立研究。还包括以5 - 9年级女生和代表性不足的少数民族学生为重点的外联活动,以提高他们对科学和工程的兴趣。
英文摘要
Technical: This project explores materials science of high indium content InGaN and InN semiconductors for high-efficiency solar cells and thermoelectric applications. Fundamental studies of metal-organic chemical vapor deposition (MOCVD) growth of InN and high In-content InGaN (with In50%) alloys on sapphire and silicon (111) substrates will be conducted. The investigations include the use of alternative precursor (Dimethyl-hydrazine), pulsed MOCVD, InN-GaN superlattices along with various types of characterization to evaluate the potential for solar cell and thermoelectric applications, and to further basic understanding of the doping mechanism for p-InN and p-InGaN semiconductors.Non-technical: This project addresses basic research issues in a topical area of materials science with high technological relevance. High-efficiency solar photovoltaic cells have broad potential impact on economy and human life through more efficient electrical energy generation. Thermoelectric materials provide important solutions for device cooling and heat recycling and for electrical power generation. The project allows graduate and undergraduate students to be trained in a multidisciplinary research environment, encompassing the physics of semiconductor, optoelectronics materials and devices, materials science and MOCVD epitaxy, physics of semiconductor nanostructures, and semiconductor device design and fabrication. Graduate students also serve as mentors for undergraduate students conducting independent studies in the PI's lab. Outreach activities focusing on grade 5th - 9th female and underrepresented minority students are included to raise their interest in science and engineering.
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会议论文
Physics, Materials, and Electronic Properties of Dilute-As GaNAs Semiconductors
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批准号:1505122
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项目类别:Continuing Grant
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资助金额:$39.5万
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财政年份:2015
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负责人:Nelson Tansu
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依托单位:
Valence Subband Engineering in High Al-content AlGaN Quantum Wells Active Regions for Deep Ultraviolet Lasers and Emitters
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批准号:1408051
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项目类别:Standard Grant
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资助金额:$38.59万
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财政年份:2014
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负责人:Nelson Tansu
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依托单位:
Novel Approaches for High Efficiency Droop-Free III-Nitride Light-Emitting Diodes in Solid State Lighting
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批准号:1028490
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项目类别:Continuing Grant
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资助金额:$35.18万
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财政年份:2010
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负责人:Nelson Tansu
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依托单位:
Nanostructure Engineering of III-Nitride Active Regions for High-Performance Visible Emitters and Lasers
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批准号:0701421
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项目类别:Continuing Grant
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资助金额:$26.98万
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财政年份:2007
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负责人:Nelson Tansu
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依托单位:
海外基金