Epitaxial Oxides by ALD
Epitaxial Oxides by ALD
批准号:
0932834
负责人:
Brian Willis
金额:
$25.91万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2009
资助国家:
美国
项目状态:
已结题
起止时间:
2009-09-01 至 2013-08-31
中文摘要
0932834 willis该奖项是根据2009年美国复苏和再投资法案(公法111-5)资助的。PI正在计划一项实验研究计划,以研究通过原子层沉积在半导体衬底上的外延晶体氧化物层的生长。晶体氧化物是一类重要的材料,具有丰富的功能性电子、磁性和光学性质,包括铁电性、热释电性、压电性和铁磁性。此外,氧化物可以像元素和化合物半导体一样掺杂,它们可以是绝缘的、导电的、半导体的和超导的。为了充分发挥晶体氧化物的潜力,有必要推进生长工程,将氧化物与半导体衬底集成在一起,制造半导体/晶体氧化物混合器件。PI的工艺是基于碱土金属氧化物的独特性质和原子层沉积的精度,在半导体衬底上生长外延氧化物,包括Si, Ge和GaAs。与现有的基于分子束外延的先进技术相比,该工艺有几个优点。这些优势包括过程经济,包括提高吞吐量,降低资本和运营成本,以及由于原子层沉积化学的独特方面而简化的处理。该研究计划的成功实施将通过实现基于氧化物电子器件的新型器件,并激发工业兴趣,从而对电子材料领域产生变革性影响。该研究的智力优势在于发现了一种基于基本化学相互作用和原子层沉积的反应过程,以在半导体衬底上生长外延氧化物。这项研究可以促进沉积过程、表面反应和材料工程的知识。它利用了电子材料中最先进的概念,并提高了设计一类有用材料的能力。该研究还将促进对现代微电子技术感兴趣的半导体/氧化物界面的化学和结构相互作用的理解。该研究的广泛影响包括技术进步,K-12教育的加强,以及向代表性不足的群体伸出援助之手。PI计划开展一项外联计划,将影响高中教师、高中生以及代表性不足和贫困的学生群体。他将为康涅狄格大学的达芬奇项目开发一个基于微电子的研讨会,为来自不同背景的高中教师提供一个鼓舞人心的学习经历。该计划将延伸到哈特福德的磁铁学校,以促进内城教师和学生未充分利用的才能。这项工作还将培养一名博士研究生,并为本科生提供研究经验。最后,该工作将作为化学工程和材料科学专业学生的教育工具整合到教学中。
英文摘要
0932834WillisThis award is funded under the American Recovery and Reinvestment Act of 2009 (Public Law 111-5).The PI is planning an experimental research program to investigate the growth of epitaxial crystalline oxide layers on semiconductor substrates by atomic layer deposition. Crystalline oxides are an important class of materials that exhibit a rich variety of functional electronic, magnetic, and optical properties, including ferroelectricity, pyroelectricity, piezoelectricity, and ferromagnetism. In addition, oxides can be doped like elemental and compound semiconductors and they can be insulating, conducting, semiconducting, and superconducting. In order to realize the full promise of crystalline oxides, it is necessary to advance the growth engineering, and integrate oxides with semiconductor substrates to make hybrid semiconductor/ crystalline oxide devices. The PI's process is based on the unique properties of the alkaline earth metal oxides and the precision of atomic layer deposition to grow epitaxial oxides on semiconductor substrates including Si, Ge, and GaAs. The process has several advantages over the existing state-of-the-art that is based on molecular beam epitaxy. These advantages include process economics including increased throughput, and lower capital and operating costs, as well as simplifications of the processing due to unique aspects of the atomic layer deposition chemistry. Successful execution of the research program will lead to transformative impacts on the field of electronic materials by enabling a new class of devices based on oxide electronics, and stimulating industrial interest. The intellectual merits of the research are to discover a reactive process based on fundamental chemical interactions and atomic layer deposition to grow epitaxial oxides on semiconductor substrates. The research could advance the knowledge of deposition processes, surface reactions, and materials engineering. It utilizes state-of-the-art concepts in electronic materials and advances the capability for engineering a useful class of materials. The research will also advance understanding of the chemical and structural interactions at semiconductor/ oxide interfaces, which are of interest to modern microelectronics technology. The broader impacts of the research include technology advancement, K-12 education enhancement, and outreach to underrepresented groups. The PI plans an outreach program that will impact high school teachers, high school students, and underrepresented and underprivileged student populations. He will develop a workshop based on microelectronics for the da Vinci program at UConn to provide an inspirational and learning experience for high school teachers from diverse backgrounds. The program will reach out to the Magnet schools of Hartford to promote the underutilized talents of inner city teachers and students. The work will also educate a PhD graduate student and provide research experiences for undergraduate students. Lastly, the work will be integrated into teaching as an educational vehicle for Chemical Engineering and Materials Science students.
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会议论文
Growth Engineering of Plasmonic Nanostructures with ALD
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批准号:2232057
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项目类别:Standard Grant
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资助金额:$46.41万
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财政年份:2023
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负责人:Brian Willis
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依托单位:
Nanofabricated Model Systems for Investigations of Plasmon Enhanced Reactions
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批准号:2150158
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项目类别:Standard Grant
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资助金额:$42.26万
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财政年份:2022
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负责人:Brian Willis
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依托单位:
UNS: Tunable Plasmonic Nanostructures by Atomic Layer Deposition
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批准号:1511138
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项目类别:Continuing Grant
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资助金额:$30.0万
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财政年份:2015
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负责人:Brian Willis
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依托单位:
Collaborative Research: Electro-optical Studies of Nanoscale, Geometrically-Asymmetric Tunnel Junctions for Collection and Rectification of Light from Infrared through Visible
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批准号:1231248
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项目类别:Standard Grant
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资助金额:$30.0万
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财政年份:2012
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负责人:Brian Willis
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依托单位:
DNA Sequencing with Nanopores and Transverse Tunneling
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批准号:1102230
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项目类别:Continuing Grant
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资助金额:$36.0万
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财政年份:2011
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负责人:Brian Willis
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依托单位:
Tunneling Spectroscopy for Nanofabricated Biochemical Sensors
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批准号:0935009
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项目类别:Standard Grant
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资助金额:$9.78万
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财政年份:2009
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负责人:Brian Willis
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依托单位:
CAREER: Perovskite Buffer Layers for Compound Semiconductor-Silicon Heteroepitaxy
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批准号:0935010
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项目类别:Standard Grant
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资助金额:$0.37万
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财政年份:2009
-
负责人:Brian Willis
-
依托单位:
NER: Engineering the Molecule-Electrode Contact with Novel Molecular Tunnel Junctions
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批准号:0608730
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项目类别:Standard Grant
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资助金额:$10.0万
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财政年份:2006
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负责人:Brian Willis
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依托单位:
Tunneling Spectroscopy for Nanofabricated Biochemical Sensors
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批准号:0601269
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项目类别:Standard Grant
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资助金额:$24.0万
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财政年份:2006
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负责人:Brian Willis
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依托单位:
CAREER: Perovskite Buffer Layers for Compound Semiconductor-Silicon Heteroepitaxy
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批准号:0239006
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项目类别:Standard Grant
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资助金额:$40.44万
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财政年份:2003
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负责人:Brian Willis
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依托单位:
国内基金
海外基金
偶联剂辅助的“NPs@Oxides”类核-壳结构跨尺度自组装及其甲烷干气重整性能研究
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批准号:21773069
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项目类别:面上项目
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资助金额:65.0万元
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批准年份:2017
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负责人:路勇
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依托单位: