Investigations on HVPE - grown InGaN quantum wells on non- and semipolar GaN

利用半极性和非极性晶面来沉积设计用于绿色发射激光器的量子阱已被证明是一个成功的概念。因此，正如本提案所建议的那样，未来的研究主要集中在GaN和InGaN层中的内部（压电）电场的测量上。目标是：-将测量在不同晶体面上的量子阱内产生的压电场，并与理论计算进行比较。-将定量测量GaN主体材料内的压电场的强度和横向延伸。-量子阱内的In含量将由EDX测量。压电场的测量值将与InGaN量子阱的In含量相关。-在量子阱区形成的晶体缺陷的密度和类型将与in含量相关。

The use of semi- and non-polar crystal facets for the deposition of quantum wells designed for green emitting lasers has been shown to be a successful concept. Therefore, the future research – as suggested by this proposal – is mainly focused on the measurement of internal (piezo-)electric fields both in GaN and InGaN layers. The goals are:- The piezoelectric fields created within quantum wells on various crystal facettes will be measured and compared to theoretical calculations.- The piezoelectric field present within the GaN host material will be measured quantitatively in strength and lateral extension.- The In content within the quantum well will be measured by EDX.- The measured value of the piezoelectric field will be correlated with the In content of the InGaN quantum well.- The density and type of crystallographic defects formed in the quantum well region will be correlated with the In content.