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Hydrogen in Transparent Conducting Oxides

Hydrogen in Transparent Conducting Oxides
透明导电氧化物中的氢
批准号:
1160756
负责人:
Michael Stavola
金额:
$30.0万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2012
资助国家:
美国
项目状态:
已结题
起止时间:
2012-06-01 至 2017-05-31

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中文摘要
翻译
* 技术摘要 * 透明导电氧化物中氢杂质的物理学是本研究计划的重点,透明导电氧化物是一种迅速兴起的电子材料。 透明导电氧化物联合收割机将可见光中的透明性与高导电性结合。 传统上,本征缺陷如氧空位和阳离子缺陷被认为是导电性的来源。 然而,最近的理论发现,在许多导电氧化物中,原生缺陷不太可能对其导电性负责。 相反,氢中心被预测为浅施主,产生强的n型行为。 虽然已经做出了许多令人兴奋的理论预测,但对透明导电氧化物的导电性和氢所扮演的角色的现代理解仍处于起步阶段。 IR和拉曼光谱将用于探测H相关中心的结构和反应以及它们与电导率变化的关系。该项目的一个中心目标是教育学生。 半导体氧化物中的杂质和缺陷及其对导电性的影响的实验研究为学生提供了一个很好的机会,让他们了解材料的光学特性,表征方法以及缺陷如何影响性能。 学生参与与美国和国外领先的研究小组的合作,并通过第一手经验学习团队合作的价值。非技术摘要 * 该研究计划的重点是透明导电氧化物中氢的实验研究,透明导电氧化物是一种不寻常的材料,它将联合收割机的可见光透明度与高导电性结合在一起。 透明导电氧化物广泛用于普通电子设备,如计算机的平板显示器。 氢的存在在金属氧化物中是常见的,其中它形成强的O-H键并与其他杂质和缺陷相互作用。 令人惊讶的是,氢被认为是导电性的重要来源。 该项目的目标是对导电氧化物中的氢杂质、其迷人的反应化学以及氢作为导电性来源的作用有一个基本的了解。对战略电子材料的研究,有趣的物理学和重要的技术应用交叉,为学生提供了一个很好的机会来了解半导体技术的当前发展,材料的光学特性,半导体的物理学,以及缺陷如何影响性能。学生有机会对影响电子技术的问题做出重要贡献,这会点燃他或她在科学和工程领域取得成功的兴奋。
英文摘要
****Technical Abstract****The physics of hydrogen impurities in transparent conducting oxides, a rapidly emerging class of electronic materials, is the focus of this research program. The transparent conducting oxides combine transparency in the visible with high conductivity. Native defects such as oxygen vacancies and cation interstitials have traditionally been invoked as the source of conductivity. Recent theory, however, finds that in many conducting oxides, native defects are unlikely to be responsible for their conductivity. Instead, hydrogen centers are predicted to be shallow donors that give rise to strong n-type behavior. While a number of exciting theoretical predictions have been made, a modern understanding of the conductivity of transparent conducting oxides and the role played by hydrogen is in its infancy. IR and Raman spectroscopies will be used to probe the structures and reactions of H-related centers and their relationship to changes in conductivity. A central goal of this project is the education of students. Experimental studies of impurities and defects in semiconducting oxides and their effect on conductivity provide an excellent opportunity for students to learn about the optical properties of materials, characterization methods, and how defects affect properties. Students are engaged in collaborations with leading research groups in the U.S. and abroad and learn the value of teamwork by first-hand experience.****Non-Technical Abstract****The focus of this research program is an experimental study of hydrogen in transparent conducting oxides, an unusual class of materials that combine transparency in the visible with high conductivity. Transparent conducting oxides are widely used in common electronic devices like flat-panel displays for computers. The presence of hydrogen is common in the metal oxides where it forms strong O-H bonds and interacts with other impurities and defects. Surprisingly, hydrogen is proposed to be an important source of conductivity. The goal of this project is a fundamental understanding of the hydrogen impurity in conducting oxides, its fascinating reaction chemistry, and hydrogen's role as a source of conductivity. Research on strategic electronic materials, where interesting physics and important technological applications intersect, provides students with an excellent opportunity to learn about current developments in semiconductor technology, the optical properties of materials, the physics of semiconductors, and how defects affect properties. And the opportunity for a student to make important contributions to problems that have an impact on electronics technology ignites in him or her the excitement that leads to a successful career in science and engineering.
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Hydrogen in the Ultrawide Bandgap Semiconductor beta-Ga203
  • 批准号:
    1901563
  • 项目类别:
    Standard Grant
  • 资助金额:
    $33.67万
  • 财政年份:
    2019
  • 负责人:
    Michael Stavola
  • 依托单位:
Hydrogen in Crystalline Semiconductors
  • 批准号:
    0802278
  • 项目类别:
    Standard Grant
  • 资助金额:
    $27.73万
  • 财政年份:
    2008
  • 负责人:
    Michael Stavola
  • 依托单位:
Atomic-Scale Structures and Properties of Hydrogen-Containing Defects in Semiconductors
  • 批准号:
    0403641
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $29.4万
  • 财政年份:
    2004
  • 负责人:
    Michael Stavola
  • 依托单位:
Structures and Properties of Hydrogen-Containing Defects in Semiconductors
  • 批准号:
    0108914
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $25.5万
  • 财政年份:
    2001
  • 负责人:
    Michael Stavola
  • 依托单位:
海外基金