E2CDA: Type II: Collaborative Research: Metal-insulator transitions for low power switching devices

该项目的重点是研究新的氧化物材料，这种材料可能使新一代的电子计算设备成为可能。该项目将为研究生和本科生提供有关新型电子器件、材料和电路的跨学科培训。他们的培训将通过加州大学圣巴巴拉分校（UCSB）和俄亥俄州立大学（OSU）的研究小组之间的密切合作和学生交流来促进。UCSB拥有多元化的本科生，是一所少数族裔/西班牙裔服务机构。与行业利益相关者的定期电话会议和相关活动将确保知识向行业转移，并使参与的学生接触到与新材料和设备向新兴技术过渡相关的问题。利用电场来控制氧化物材料独特的电子特性，特别是其大量改变电阻的能力，将实现新型电子器件。这些器件将被研究作为目前用于计算的晶体管器件的替代品的潜力，这些器件基于传统的半导体材料，如硅。该项目的动机是独特的机会，包括潜在的突然切换和减少切换所需的能量。UCSB的材料科学家和OSU的电气工程师之间的密切合作将集中在优化氧化物材料，他们的科学理解和使用电场的控制上，并建立与应用相关的设备特性。该项目的成果将有助于开发尚未充分开发的固态电子技术。

The project focuses on new oxide materials that may enable a new generation of electronic devices for computing. The project will offer interdisciplinary training of graduate and undergraduate students in new electronic devices, materials, and circuits. Their training will be fostered by close collaboration and student exchanges between the investigators' groups at the University of California, Santa Barbara (UCSB) and Ohio State University (OSU). UCSB has a diverse undergraduate population and is a minority/Hispanic-serving institution. Regular phone conferences with industry stakeholders and related activities will ensure knowledge transfer to industry and expose the participating students to matters relevant to the transitioning of new materials and devices into emergent technologies. Novel electronic devices will be realized that employ electric fields to control the unique electronic properties of oxide materials, in particular, their ability to change the electrical resistance by a large amount. These devices will be investigated for their potential as alternatives to current transistor devices used for computing, which are based on conventional semiconductor materials, such as silicon. The project is motivated by unique opportunities, including the potential for abrupt switching and a reduction in the energy that is required to switch. Close collaboration between materials scientists at UCSB and electrical engineers at OSU will focus on optimizing oxide materials, their scientific understanding, and their control using electric fields, and establishing the device characteristics relevant for applications. The results from this project will contribute to a solid-state electronics technology that has been underexplored.