Understanding and Controlling Defects, Disorder and Electronic Transport in High Mobility Perovskite Oxides
Understanding and Controlling Defects, Disorder and Electronic Transport in High Mobility Perovskite Oxides
批准号:
1741801
负责人:
Bharat Jalan
金额:
$47.55万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2017
资助国家:
美国
项目状态:
已结题
起止时间:
2017-08-15 至 2022-07-31
中文摘要
非技术描述:该项目的重点是使用先进的薄膜沉积技术合成一类新的氧化物材料。这些材料具有高导电性和宽带隙-因此光可以很容易地通过,使其光学透明。这些性质对于下一代电子设备如高功率电子设备、透明显示器、触摸屏和太阳能电池具有极大的兴趣。研究活动通过教育、培训和实践讲习班,为当地高中、少数群体组织和社区学院的学生的专业发展经验作出贡献。技术规格:通过实验和计算技术相结合,该项目正在研究基本因素,在原子水平的细节,影响应变工程碱土锡酸盐(Sr 1-xSnO 3)薄膜的缺陷形成和电子特性。特别是,该项目正在寻求理解和控制这些材料中的缺陷,特别是位错,局部结构和电子迁移率,最终目标是创造一类新的具有宽带隙的高迁移率半导体材料,用于室温应用。该项目还开发了用于控制复杂氧化物中的点缺陷和结构缺陷的原子级合成方法。该项目为研究生,本科生和高中生提供机会,以获得尖端薄膜沉积方法,先进的表征技术和理论计算方面的培训。
英文摘要
NON-TECHNICAL DESCRIPTION: This project focuses on the synthesis of a new class of oxide materials using an advanced state-of-the-art thin film deposition technique. These materials possess high conductivity and a wide bandgap - so light can pass through easily, making it optically transparent. These properties are of great interest for next generation electronic devices such as high-power electronics, transparent displays, touchscreens and solar cells. The research activities contribute to the professional development experience for students from local high schools, minority organizations and community colleges through education, training and hands-on workshops. TECHNICAL DETAILS: Through a combination of experimental and computational techniques, the project is investigating fundamental factors, at the atomic level of detail, that influence the defect formation and electronic properties in strain-engineered alkaline-earth stannate (Sr1-xBaxSnO3) thin films. In particular, the project is seeking to understand, and control defects specifically dislocations, local structure, and electronic mobility in these materials with an ultimate goal to create a new class of high-mobility semiconducting materials with wide bandgap for room-temperature applications. The project is also exploiting synthesis methods for atomic level control of point defects and structural defects in complex oxides. The project is providing opportunities for graduate, undergraduate and high school students to obtain training on cutting-edge thin film deposition approaches, advanced characterization techniques, and theoretical calculations.
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Optimizing Ohmic contacts to Nd-doped n-type SrSnO 3
优化 Nd 掺杂 n 型 SrSnO 3 的欧姆接触
DOI:
10.1063/5.0027470
发表时间:
2021
期刊:
Applied Physics Letters
影响因子:
4
作者:
[Saran Kumar Chaganti, V. R., Golani, Prafful, Truttmann, Tristan K., Liu, Fengdeng, Jalan, Bharat, Koester, Steven J.]
通讯作者:
Koester, Steven J.
Dopant solubility and charge compensation in La-doped SrSnO 3 films
La 掺杂 SrSnO 3 薄膜中的掺杂溶解度和电荷补偿
DOI:
10.1063/1.5119272
发表时间:
2019
期刊:
Applied Physics Letters
影响因子:
4
作者:
[Truttmann, Tristan, Prakash, Abhinav, Yue, Jin, Mates, Thomas E., Jalan, Bharat]
通讯作者:
Jalan, Bharat
DOI:
10.1021/acs.jpcc.8b00653
发表时间:
2018-05-31
期刊:
JOURNAL OF PHYSICAL CHEMISTRY C
影响因子:
3.7
作者:
[Chen, Liang, Zhang, Yingying, Hou, Yu]
通讯作者:
Hou, Yu
SrSnO₃ Metal-Semiconductor Field-Effect Transistor With GHz Operation
SrSnO™ 金属半导体场效应晶体管,工作频率 GHz
DOI:
10.1109/led.2020.3040417
发表时间:
2021
期刊:
IEEE Electron Device Letters
影响因子:
4.9
作者:
[Wen, Jiaxuan, Chaganti, V. R., Truttmann, Tristan K., Liu, Fengdeng, Jalan, Bharat, Koester, Steven J.]
通讯作者:
Koester, Steven J.
DOI:
10.1021/acs.nanolett.0c03708
发表时间:
2021
期刊:
Nano Letters
影响因子:
10.8
作者:
[Prakash, Abhinav, Wang, Tianqi, Bucsek, Ashley, Truttmann, Tristan K., Fali, Alireza, Cotrufo, Michele, Yun, Hwanhui, Kim, Jong-Woo, Ryan, Philip J., Mkhoyan, K. Andre]
通讯作者:
Mkhoyan, K. Andre
共 8 条
High Mobility Binary and Ternary Germanate Films and Heterostructures
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批准号:2306273
-
项目类别:Continuing Grant
-
资助金额:$57.96万
-
财政年份:2023
-
负责人:Bharat Jalan
-
依托单位:
Defect-Managed, High-Mobility Oxide Thin Films and Heterostructures for Fundamental Study
-
批准号:1410888
-
项目类别:Standard Grant
-
资助金额:$36.6万
-
财政年份:2014
-
负责人:Bharat Jalan
-
依托单位:
海外基金