EAGER: III-Nitride Solar Cells

非技术性：目前有几种方法可以提高光伏（PV）设备的成本，以每瓦美元（$/W）为单位。硅太阳能电池是最常见的器件结构，其性能和效率都接近理论极限。降低太阳能成本的最有前途的方法是使用多结太阳能电池（MJSC），因为它们有效地利用了太阳光谱。由氮化铟镓（InGaN）制成的太阳能电池可以对光伏器件的基本特性的技术和理解产生巨大影响。InGaN合金吸收的太阳光谱部分可以通过改变铟和镓的相对分数来调节。InGaN向更大范围的成分发展将导致III族氮化物作为太阳能电池的更广泛应用。使用一种由非常薄的InGaN层制成的材料系统的能力，在廉价的蓝宝石衬底上生长用于MJSC的集成，将降低电池制造成本。通过提高整体MJSC效率并将其纳入太阳能电池板生产，单个电池板的每瓦成本，从而降低总系统成本。EAGER项目的目的是探索和开发In（x）Ga（1-x）N基太阳能电池结构，该结构吸收更大部分的太阳光谱，效率与当前的III-V族化合物电池相当。技术：EAGER项目主要致力于开发基于InGaN材料体系的太阳能电池，以实现高效率的III族氮化物太阳能电池、单结和多结太阳能电池。目标是开发基于InxGa 1-xN的太阳能电池，其吸收太阳光谱的更大部分，效率与当前的III-V化合物结构相当。将探索和开发单结和多结太阳能电池。该项目将研究实现这一目标的方法，包括：1。采用高In含量的InxGa_（1-xN）薄膜，x可达45%。2.开发具有数百纳米InxGa 1-xN的太阳能电池，以充分吸收入射辐射。该研究将培养北卡罗来纳州州立大学的一名研究生，使其获得跨学科的研究经验，成为替代能源和太阳能电池技术领域的专家。该奖项反映了NSF的法定使命，并通过使用基金会的智力价值和更广泛的影响审查标准进行评估，被认为值得支持。

Non-technical:There are currently several approaches to improve the cost of photovoltaic (PV) devices in terms of dollars per watt ($/W). Silicon solar cells, the most common device structures, are approaching theoretical limits of both performance and efficiency. The most promising approach to drive down the cost of solar energy is the use of multi-junction solar cells (MJSCs) due to their efficient use of the solar spectrum. Solar cells made from indium gallium nitride (InGaN) can have a huge impact on the technology and understanding of the basic properties of photovoltaic devices. The portion of the solar spectrum that an InGaN alloy absorbs can be tuned by varying the relative fraction of indium and gallium. The development of InGaN to a larger range of compositions will lead to wider applications of III-Nitrides as solar cells. The ability to use one material system made of very thin InGaN layers, grown on cheap sapphire substrates for the integrations of MJSCs will reduce the cell manufacturing cost. By improving the overall MJSC efficiency and incorporating them into solar panel production, the cost per watt of individual panels, and thus the total system cost will be reduced. The aim of this EAGER project is to explore and develop In(x)Ga(1-x)N-based solar cell structures that absorb a larger portion of the solar spectrum with efficiency that is comparable to the current III-V compound cells. Both single and multi-junction solar cells will be explored.Technical:This EAGER project focuses on the development of solar cells based on InGaN material system to achieve high efficiency III-Nitrides solar cells, single junction and multi-junction solar cells. The aim is to develop InxGa1-xN-based solar cells that absorb a larger portion of the solar spectrum with efficiency that is comparable to the current III-V compound structures. Both single and multi-junction solar cells will be explored and developed. The project will investigate methods to achieve this goal including: 1. Utilizing InxGa1-xN films with high In-content, x up to 45%. 2. Develop solar cells with several hundred nanometers of InxGa1-xN to fully absorb the incident radiation. The research will train one graduate student at North Carolina State University to acquire interdisciplinary research experience and become an expert in the field of alternative energy and solar cell technology.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.