Development of Electrostatic Force Microscope with Spatial Resolution For Elementary Charge
Development of Electrostatic Force Microscope with Spatial Resolution For Elementary Charge
批准号:
11554013
负责人:
SUGAWARA Yasuhiro
金额:
$8.06万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B).
财政年份:
1999
资助国家:
日本
项目状态:
已结题
起止时间:
1999 至 2000
中文摘要
静电力显微镜(EFM)提供了一个新的机会,以测量各种静电特性的表面上的亚微米尺度,这是由于不均匀的电荷分布和表面功函数的变化。例如,电位法、接触带电电荷的成像及其在绝缘表面上的耗散过程等。不幸的是,到目前为止,EFM的横向分辨率还不够。这是由于以下两个主要原因:(i)很难测量具有良好信噪比(S/N)的静电力的弱距离依赖性。(ii)静电力和货车德瓦耳斯力的分离是一个非常困难的问题,本课题基于频率调制(FM)检测方法,提出了一种同时检测货车德瓦耳斯力和静电力相互作用的新方法。GaAs(110)表面上原子级点缺陷处的表面结构和表面电荷以真正的原子分辨率被清楚地分辨。点缺陷处的静电力图像对比度在样品正偏压区呈单调变化,而在样品负偏压区变化较为复杂。从这种偏置电压的依赖性,我们可以验证,在点缺陷的原子分辨的表面电荷的符号是积极的。此外,我们还研究了用EFM对电荷进行原子分辨率成像的测量条件。
英文摘要
The electrostatic force microscope (EFM) offers new opportunity to measure a variety of electrostatic properties on the surface on a sub-micron scale, which result from nonuniform charge distribution and variations in surface work function. For example, potentiometry, imaging of contact-electrified charge and its dissipation process on insulating surfaces and so on have been demonstrated. Unfortunately, so far, the lateral resolution of the EFM has been insufficient. This is due to the following two main reasons : (i) It is rather difficult to measure weak distance dependence of the electrostatic force with a good signal-to-noise (S/N) ratio.(ii) It is much difficult to separate the electrostatic force from the van der Waals force.In this project, we developed a novel method to detect the van der Waals and the electrostatic force interactions simultaneously, which was based on the Frequency modulation (FM) detection method in UHV.For the first time, the surface structure and the surface charge at atomic-scale point defects on the GaAs (110) surface were clearly resolved with true atomic resolution. The contrast of the electrostatic force image at a point defect showed monotonous change in the positive sample bias region, while it complicatedly changed in the negative sample bias region. From this bias voltage dependence, we could verify that the sign of the atomically resolved surface charge at the point defect was positive. Furthermore, we investigated the measurement condition of the atomic resolution imaging of the charge using the EFM.
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M.Abe, Y.Sugawara, K.Sawada, Y.Andoh and S.Morita: ""Near-field Optical Imaging Using Force Detection with New Tip-Electrode Geometry"" Appl.Sur.Sci.Vol.140, No.3-4. 383-387 (1999)
M.Abe、Y.Sugara、K.Sawada、Y.Andoh 和 S.Morita:“利用新尖端电极几何形状的力检测进行近场光学成像”Appl.Sur.Sci.Vol.140,第 140 号。
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S.Morita, Y.Sugawara, S.Orisaka and T.Uchihashi: "Missing Ag Atom on Si (111) √<3>×√<3>-Ag Surface Observed by Noncontact Atomic Force Microscope"Jpn.J.Appl.Phys.. Vol.38, No.11B. L1342-L1344 (1999)
S.Morita、Y.Sugara、S.Orisaka 和 T.Uchihashi:“通过非接触原子力显微镜观察 Si (111) √<3>×√<3>-Ag 表面上缺失的 Ag 原子”Jpn.J.Appl。物理学..第 38 卷,第 11B 期(1999 年)
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M.Ashino, T.Uchihashi, K.Yokoyama, Y.Sugawara, S.Morita, and M.Ishikawa: "Atomic-Scale Structures on a Non-Stoichiometric TiO_2 (110) Surface Studied by Noncontact AFM"Appl.Sur.Sci. Vol.157, No.4. 212-217 (2000)
M.Ashino、T.Uchihashi、K.Yokoyama、Y.Sugara、S.Morita 和 M.Ishikawa:“通过非接触 AFM 研究非化学计量 TiO_2 (110) 表面上的原子尺度结构”Appl.Sur.Sci
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K.Yokoyama et al.: "Atomic Resolution Imaging on Si(100)2x1 and Si(100)2x1:H Surfaces with Noncontact Atomic Force Microscopy"Jpn.J.Appl.Phys.. 39・2A. L113-L115 (2000)
K. Yokoyama 等:“利用非接触原子力显微镜对 Si(100)2x1 和 Si(100)2x1:H 表面进行原子分辨率成像”Jpn.J.Appl.Phys.. 39・2A (2000) )
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森田清三,菅原康弘: "原子間力顕微鏡による帯電素過程の研究"静電気学会誌. 24・1. 8-14 (2000)
Seizo Morita,Yasuhiro Sukawara:“使用原子力显微镜研究充电基本过程”静电学会杂志 24・1(2000)。
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共 69 条
Assembly of nanostructure on insulating surfaces and investigation of gas reaction mechanism using atomic force microscopy
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批准号:16H06327
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项目类别:Grant-in-Aid for Scientific Research (S)
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依托单位:
Development of Liquid High-Speed Atomic Force Microscopy With atomic resolution
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项目类别:Grant-in-Aid for Challenging Exploratory Research
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财政年份:2010
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负责人:SUGAWARA Yasuhiro
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Investigation of Mechanical Manipulation of Atoms and Molecules on Insulator Surfaces with Extreme Field Atomic Force Microscopy
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批准号:20221004
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资助金额:$58.99万
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财政年份:2008
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负责人:SUGAWARA Yasuhiro
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依托单位:
atomic and molecular manipulation and fabrication of nano-strucure using atomic force microscopy
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批准号:15201020
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$25.96万
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财政年份:2003
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负责人:SUGAWARA Yasuhiro
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依托单位:
Measurement Condition on True Atomic Resolution Imaging of Noncontact Atomic Force Microscope
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批准号:11450018
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项目类别:Grant-in-Aid for Scientific Research (B).
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资助金额:$8.64万
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财政年份:1999
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负责人:SUGAWARA Yasuhiro
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依托单位:
Measurement Condition for Atomic Resolution imaging on Reactive Surfaces Using Atomic Force Microscopy
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批准号:09450018
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$6.4万
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财政年份:1997
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负责人:SUGAWARA Yasuhiro
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依托单位:
Development of Photon Atomic Force Microscope
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批准号:08554007
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$4.35万
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财政年份:1996
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负责人:SUGAWARA Yasuhiro
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依托单位:
Study on True Atomic Resolution Imaging Using Noncontact Atomic Force Microscopy
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批准号:07454067
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$5.12万
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财政年份:1995
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负责人:SUGAWARA Yasuhiro
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依托单位:
海外基金