Elucidation of engineered domain structures of ferroelectric crystals and their high piezoelectricity
Elucidation of engineered domain structures of ferroelectric crystals and their high piezoelectricity
批准号:
13450118
负责人:
NAKAMURA Kiyoshi
金额:
$3.52万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2001
资助国家:
日本
项目状态:
已结题
起止时间:
2001 至 2002
中文摘要
这项研究的目的是解决工程领域的结构pseudo-cubicferroelectric crystal knbo_3 and the high piezoelectricityand to develop domain control methods and piezoelectric devices utilizing the high coupling factor. .The results obtained in this project are summarized as follows:1. The orientation dependence of various electromechanical coupling factors for knbo_3 crystal havebeen calculated and the cut with the highest coupling factor among all known piezoelectrics for thethickness-extensional mode has been found. 2.这应该是strain vs. electron -field curvefor the pseudo-cubic (001)_<pc> cut of knbo_3 had a linear characteristic for a low field,but it was hysteretic due to occurrence of 60 domains for a high field and exhibited a much higherstrain than that estimated theoretically. 3. Chemical etching of crystals for removing microcrackslead to no occurrence of 60 domain,resulting in non-hysteretic behaviors even for a high electric field. 4. Domain structural changewas examined when subjected to heating and cooling through the phase transition temperature and wasexplained qualitatively. The method for keeping The单一domain state when heating through The5.工程域的阶段转换temperature已定义和定义工作。structures were formed by applying an electric field along the (001)_<pc> axis while heating andcooling through the phase transition point. the piezoelectric behavior was demonstrated to exhibitlittle hysteresis. The domain structure was shown for The first time to consist of two kind of 90laminar domains. 6.它解释了knbo_3 ultrasonic transducer已经有了更多的效率和broader-band characteristic as compared with those of PZT ceramics and linbo_3 crystals. Torealize higher frequency ultrasonic transducers an ECR-PLD system for epitaxial growth of highquality knbo_3 films was developed。
英文摘要
The purpose of this research is to elucidate the engineered domain structures of pseudo-cubic ferroelectric crystal KNbO_3 and the high piezoelectricity, and to develop domain control methods and piezoelectric devices utilizing the high coupling factor. The results obtained in this project are summarized as follows: 1. The orientation dependence of various electromechanical coupling factors for KNbO_3 crystal have been calculated and the cut with the highest coupling factor among all known piezoelectrics for the thickness-extensional mode has been found. 2. It was shown that the strain vs. electric-field curve for the pseudo-cubic (001)_<pc> cut of KNbO_3 had a linear characteristic for a low field, but it was hysteretic due to occurrence of 60゜ domains for a high field and exhibited a much higher strain than that estimated theoretically. 3. Chemical etching of crystals for removing micro-cracks lead to no occurrence of 60゜ domain, resulting in non-hysteretic behaviors even for a high electric field. 4. Domain structural change was examined when subjected to heating and cooling through the phase transition temperature and was explained qualitatively. The method for keeping the single domain state when heating through the phase transition temperature was devised and demonstrated to work out. 5. Engineered domain structures were formed by applying an electric field along the (001)_<pc> axis while heating and cooling through the phase transition point. The piezoelectric behavior was demonstrated to exhibit little hysteresis. The domain structure was shown for the first time to consist of two kind of 90゜ laminar domains. 6. It was demonstrated that the KNbO_3 ultrasonic transducer has a more efficient and broader-band characteristic as compared with those of PZT ceramics and LiNbO_3 crystals. To realize higher frequency ultrasonic transducers an ECR-PLD system for epitaxial growth of high quality KNbO_3 films was developed.
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Tsuyoshi Tokiwa: "Domain Structures and Piezoelectric Properties of KNbO_3 Crystals"Technical Report of IEICE. US2001-47. 43-50 (2001)
Tsuyoshi Tokiwa:“KNbO_3晶体的畴结构和压电性能”IEICE的技术报告。
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新井孝: "ECR-PLD法によるKNbO_3圧電薄膜の成長"電子情報通信学会2003年総合大会講演論文集. (2003)
Takashi Arai:“通过 ECR-PLD 方法生长 KNbO_3 压电薄膜”IEICE 2003 年大会论文集(2003 年)。
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常盤豪, 中村僖良: "KNbO_3結晶の分域構造と圧電特性"電子情報通信学会技報. US2001-47. 43-50 (2001)
Go Tokiwa,Yoshiyoshi Nakamura:“KNbO_3 晶体的磁畴结构和压电特性” IEICE 技术报告 US2001-47(2001)。
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K.Arai: "Growth of KNbO_3 piezoelectric Films by ECR-PLD"Proc. 2003 IEICE Central Conference. 225 (2003)
K.Arai:“通过 ECR-PLD 生长 KNbO_3 压电薄膜”Proc。
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K.Nakamura: "KNbO_3 BGS Wave Resonators Utilizing Reflection at the Edges"Proc. Autumn Meeting of Acoustical Society of Japan. 1129-1130 (2002)
K.Nakamura:“利用边缘反射的 KNbO_3 BGS 波谐振器”Proc。
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