Implant Isolation of III-V Compound Semiconductor Devices and Structures

集成电路中的各个器件可以通过用高能离子照射它们之间的材料来彼此电隔离。这会在半导体中产生缺陷，从而捕获载流子，从而增加材料的电阻。然而，这一过程的有效性取决于材料以及辐照和辐照后的加工条件。该项目旨在为一种新型设备开发一种植入物隔离方案，该设备是由澳大利亚初创公司Ebitactix开发的，该公司基于CSIRO的研究。这将通过将ANU在离子辐照和缺陷工程方面的经验和专业知识与Ebitactix Pty Ltd.的设备和加工专业知识相结合来实现。

Individual devices in an integrated circuit can be electrically isolated from each other by irradiating the materials between them with high energy ions. This creates defects in the semiconductor that trap charge carriers and thereby increase the resistance of the material. However, the effectiveness of this process depends on the material as well as irradiation and post-irradiation processing conditions. This project aims to develop an implant isolation scheme for a new class of devices developed by Epitactix, an Australian start-up company founded on CSIRO research. This will be achieved by combining the ANU's experience and expertise in ion-irradiation and defect engineering with the device and processing expertise of Epitactix Pty Ltd.