High Brightness Electron Source Array and Its Development to Vacuum Microelectronics (Summary)

1)研究了过渡金属氮化物(HFN，Tan，NbN)和碳化物(HFC，WC，VC，ZRC，CRC)作为场发射阵列的新型阴极材料，其中NbN是最稳定的阴极材料。2)通过引入金属-有机反应气体物种，利用聚焦离子束和电子束(双束)在同一腔室中可以制备纳米尺寸的场发射器件。3)紫外光(UV)激光照射硅或Spindt型场致发射器阵列可以改善电子发射行为，其中激光光子解吸空气中吸附的水组分。研究发现，紫外激光处理碳纳米管(CNT)阴极可使电子发射增加4个数量级。通过对…的精确研究，发现碳纳米管阴极的场发射即使在真空度为10^~(-4)的情况下也是稳定的更多的局域功函数和分子束的表面修饰，通过功函数控制表面反应是可能的。5)用场发射显微镜研究了Spindt型场发射器件的稳定性和发射百分比。实验结果表明，在一定的气体环境下，微尖的激活比例最高可提高到90%。6)研究了场发射电子的能量分布。利用GaAs/AlAs量子结构制作了共振隧穿发射体。对于n型和n型硅，分别获得了0.4 eV和0.8 eV的能散。7)具有纳米间隙的单晶硅横向发射极可以获得大于1 mA的发射电流。8)在用于高亮度场发射的硅发射极上制备了单晶和多晶金刚石。在硅发射极上镀覆一层多晶金刚石薄膜可以改善发射性能，而单晶金刚石薄膜的电子发射性能较差。9)在微米和毫米波段应用时，观察到了由于GaAsGunn效应而产生的电子发射。在可见光到近红外波段观察到了史密斯-珀塞尔辐射，这是由于低能场发射的电子束通过靠近光栅的区域。研制了小型脉冲X射线源，实现了时间分辨率为10us的时间分辨X射线照相。较少

1)As new cathode materials for field emitter arrays, transition metal nitride (HfN, TaN, NbN) and carbide (HfC, WC, VC, ZrC, CrC) have been investigated, in which NbN was found to be the most stable cathode material among investigated materials.2)Nanometer-sized field emitters could be fabricated using focused ion and electron beams (dual beams) in a same chamber by introducing metal-organic reaction gas species. A nano-gapped split emitter has been fabricated using beam induced processes for possible electron beam interference measurement.3)UV (ultra-violet) laser irradiation over Si or Spindt-type field emitter arrays was found to improve the electron emission behavior, where laser photons desorb the water components adsorbed in the air. UV laser treatment of carbon nanotube (CNT) cathodes was found to increase the electron emission by 4 orders of magnitude. The field emission from CNT cathodes was found to stable even at a vacuum of 10^<-4> Pa.4)Through the precise investigation of … More local work function and surface modification by molecular beams, surface reaction controls via work functions were found possible.5)The stability and emission percentage of Spindt-type field emitters were investigated using a field emission microscope. The percentage of active micro tips were found to be increased up to 90% by a gas ambient emission.6)The energy spread of field emitted electrons has been investigated. Resonant tunneling emitters using GaAs/AlAs quantum structures have been fabricated. The energy spreads of 0.4 and 0.8 eV were obtained for n-and -type Si, respectively.7)An emission current of more than 1 mA could be obtained for a single crystalline Si lateral emitter with a nano gap.8)Single and poly-crystalline diamonds were fabricated on Si emitters for high brightness field emitters. A coating of thin poly crystalline diamond film on Si emitter was found to improve the emission behavior, while a single crystalline diamond coating resulted in poor electron emission.9)Electron emission due to a GaAs Gunn effect for micro-and milli-meter wavelength application was observed. Smith-Purcell radiation in a visible-to-near infrared wavelength was observed for the low energy field emitted electron beam passing close to a grating. A miniature sized pulsed X-ray source was fabricated and a time-resolved X-ray radiography with a time resolution of 10 us was demonstrated. Less