Thin film X-ray diffractometer

薄膜X射线衍射法可能是研究薄膜和薄膜异质体系最重要的方法。这尤其适用于外延层系统，其中双轴应变是功能性质的重要参数。在先进薄膜技术组，每天使用两个氧化物/氮化物分子束外延(MBE)系统、两个脉冲激光沉积(PLD)系统和两个共溅射系统来生产功能层。此外，还有最近批准的特高压磁控共溅射系统，该系统将在新材料电子集团(电气工程和信息技术部)和先进薄膜技术集团(材料科学部)合作下以联合集群系统运行。研究的重点是电子功能材料的薄膜，将其集成在模型元件(如记忆电阻、变容二极管、自旋电子元件、薄膜电池等)中进行研究。由于越来越多的先进薄膜方法，获取现代和最先进的薄膜X射线衍射仪是必不可少的。对该仪器的基本要求是高X射线通量与二维探测器相结合，能够快速成像倒易空间。同样重要的是，用于精确确定多层膜系统中的晶格参数和弱反射的高分辨率，以及集成的评估软件。由于使用该系统的人数众多，用户友好性和自动化测量过程是进一步相关的标准。

Thin film X-ray diffraction is probably the most important investigation method for thin films and thin film heterosystems. This applies in particular to epitaxial layer systems, in which the biaxial strain is an important parameter of the functional properties. In the Advanced Thin Film Technology group, two oxide/nitride molecular beam epitaxy (MBE) systems, two pulsed laser deposition (PLD) systems and two co-sputtering systems are used to produce functional layers on a daily basis. In addition, there is a recently approved UHV magnetron co-sputtering system, which will be operated in a joint cluster system in a cooperation between the Group of New Materials Electronics (Department of Electrical Engineering and Information Technology) and the Advanced Thin Film Technology Group (Department of Materials Science). The research focus is on thin films of electronic functional materials, which are integrated and investigated in model components (e.g. memristors, varactors, spintronic components, thin-film batteries, etc.). Due to the growing number of advanced thin film methods, the acquisition of a modern and state-of-the-art thin film X-ray diffractometer is indispensable.The essential requirements for the instrument are a high X-ray flux combined with a two-dimensional detector that enables rapid imaging of the reciprocal space. Equally important is a high resolution for the precise determination of lattice parameters and weak reflections in multilayer systems, and an integrated evaluation software. Due to the large number of people using the system, user-friendliness and automated measurement processes are further relevant criteria.