DEVELOPMENT OF MULTI-ANODE ARC DISCHARGE PLASMA JET CVD APPARATUS FOR DIAMOND SYNTHESIS

本研究旨在研制一种大面积、高生长速率的高纯度金刚石和类金刚石碳膜的合成装置。研制的装置由等离子体源、电源、供气系统、真空系统、冷却系统和反应室组成。反应室壁上安装有用于等离子体源激活碳原子的连接法兰和用于溅射石墨靶的离子束源，以及用于激光的窗口。以离子束溅射或激光烧蚀蒸发的碳原子为原料合成了金刚石和类金刚石碳膜，其中含有高达80A的电子。在不同的等离子体源功率、衬底布置和偏置电压下，用Ar离子束溅射石墨靶合成了碳膜。用拉曼光谱、傅立叶变换红外光谱和摩擦试验对沉积的碳膜进行了表征。拉曼光谱表明，通过增加等离子体源功率，在较短的基板和源之间的距离合成了与传统类金刚石膜不同的结构的碳膜。此外，碳膜在红外区无吸收带，空气中钢球间的摩擦系数较小，为0.05。

This research aimed to develop a synthesis apparatus of high purity diamond and diamond like carbon film at higher growth rate on large area. The apparatus developed consists of a plasma source, power supply, gas feed system, vacuum system, cooling system and a reaction chamber. Connection flanges for the plasma source to activate carbon atoms and an ion beam source to sputter graphite target, a window for laser beam are mounted on the reaction chamber wall. Diamond and diamond like carbon films are synthesized from carbon atoms vaporized by ion beam sputtering or laser ablation, which activated with plasma jet includes electron up to 80A.Synthesis of carbon films were performed by sputtering of graphite target with argon ion beam under various plasma source power, substrate arrangement and bias voltage. Carbon films deposited were characterized by Raman spectroscopy, FT-IR and friction test. Raman spectra shows the carbon films that have different structure from conventional diamond like carbon films were synthesized by increasing plasma source power at shorter distance between a substrate and the source. Moreover, the carbon film shows no absorption band in infrared region and low friction coefficient of 0.05 between steel ball in air.