DEVELOPMENT OF CHARACTERIZATION METHODS FRO SILICON CRYSTALS WITH THE USE OF HYDROGEN INCORPORATION

The purpose of the present res\is to evaluate electrically-active defManagement and measure the quan of oxygen in heavily boron-dropped pイD1+イエD1 CZ silicon wafers。An efficient method for defect characterization， DLTS， was not carried out for py D1+ y D1 wafers because of differiciulties of fabrication of Schottky diodes。通过FT-IR检测氧气也是很难的，因为大的无载体吸收。所以，我们试着用分解载体集中来制造二极管，使其成为硼的氢被动。在同一时间，这可能是有可能通过FT-IR来检测氧，从而减少自由载体吸收。一种有效的导入氢的方法是在300 ° C时将氢等离子体样品暴露出来。Diodes成功地制造了在氢化表面上蒸发的Sm。Then， the car？concentration decreased from ~ 5 x10イD118イD1-3イD1 to ~ 10イD117イD1-3イD1 in the near-surface region。作为一种替代方法，硅橡胶在水中被煮沸，以更方便地将氢引入水中。您的位置：知道173>> D1> D1> D1> D1 was obtained by consecutive eight processes of boiling and removal of oxide layer。The fabrication of diodes on hydrogenated surfaces of py D1+ py D1 wafers made it possible to es\defs by DLTS。在另一边，氢原子可能会在添加到硼接受者中的失活缺陷。这是必要的，以调查氢原子和缺陷之间的相互作用。该研究表明，氢原子不仅会使某些缺陷失效，但也会使某些不活跃的缺陷失效。因此，一些结果被发现用于电气表征，但FT-IR中的氧化物检测到的D1+ D1包装物是不可检测的。为了这样的目的，更多地减少载体集中度~ 10 × D117 × D1cm × D1-3 × D1是需要的。We must pursue the introduction technique of the larger quantity of hydrogen into pイD1+イエD1 wafers。

The purpose of the present research is to evaluate electrically-active defects and measure the quantity of oxygen in heavily boron-dropped pィイD1+ィエD1 CZ silicon wafers. An efficient method for defect characterization, DLTS, was not carried out for pィイD1+ィエD1 wafers because of difficulties of fabrication of Schottky diodes. It was also difficult to detect oxygen by FT-IR because of large free carrier absorption. So, we tried to make diodes by decreasing carrier concentration due to the hydrogen passivation of boron. At the same time, it was considered possible to detect oxygen by FT-IR due to the decrease of free carrier absorption. The efficient method to introduce hydrogen was the exposure of samples to hydrogen plasma at 300℃. Diodes were successfully fabricated by evaporating Sm on top of hydrogenated surfaces. Then, the carrier concentration decreased from 〜5x10ィイD118ィエD1 cmィイD1-3ィエD1 to 〜10ィイD117ィエD1 cmィイD1-3ィエD1 in the near-surface region. As an alternative method, silicon wafers were boiled in water to introduce hydrogen more conveniently. The near-surface carrier concentration of 〜10ィイD117ィエD1 cmィイD1-3ィエD1 was obtained by consecutive eight processes of boiling and removal of oxide layer. The fabrication of diodes on hydrogenated surfaces of pィイD1+ィエD1 wafers made it possible to estimate defects by DLTS. On the other hand, the hydrogen atoms might deactivate defects in addition to boron acceptors. It is necessary to investigate the interaction between hydrogen atoms and defects. The study showed that hydrogen atoms not only deactivate some defects but also activate some inactive defects. Thus, some results were obtained for electrical characterization, but detection of oxygen in pィイD1+ィエD1 wafers by FT-IR was unattainable. For such purpose, more decrease of the carrier concentration than 〜10ィイD117ィエD1 cmィイD1-3ィエD1 is needed. We must pursue the introduction technique of the larger quantity of hydrogen into pィイD1+ィエD1 wafers.