Analysis of the formation process of the bonded area in the solid state bonding and its prediction
Analysis of the formation process of the bonded area in the solid state bonding and its prediction
批准号:
62550534
负责人:
TAKAHASHI Yasuo
金额:
$1.22万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for General Scientific Research (C)
财政年份:
1987
资助国家:
日本
项目状态:
已结题
起止时间:
1987 至 1989
中文摘要
固相键合过程不仅受键合压力和温度的影响,还受表面粗糙度的影响。当摩擦表面相互挤压时,由于表面的粗糙度,在粘接界面上形成空洞。因此,我们不能在按压后立即实现充分的亲密接触(粘合)。在这项研究中,我们通过计算机模拟分析了孔洞收缩的过程。此外,我们还开发了在压力和温度的扩展条件下估算键合过程的算法。此外,我们还给出了考虑表面粗糙度散射的最佳键合条件的确定算法。主要研究结果如下:1)孔洞收缩过程受压力和温度的控制。孔洞收缩激活能由1n(T/tv)-(1/T)图得到,其中T是绝对温度,tv是达到一定体积的孔洞收缩所需的时间。2)当孔洞收缩主要由扩散控制时,时间Tv的应力指数n在-1~-0.3范围内(n不小于-1)。3)孔洞收缩受孔洞间距的影响较大。4)微细表面粗糙度的引入促进了粘接过程的进行。5)在键合过程中,孔洞之间的间距发生变化。这是由于表面粗糙度的散布造成的。这是准确估计的重叠过程的轮廓的衰减面。6)通过考虑空穴间距的变化,如果散射不是那么大,则可以估计完整的键合时间。7)研究发现,本文提出的算法是确定最佳键合条件的有力工具。8)通过实验验证了该算法的适用性。
英文摘要
The solid state bonding process is not only influenced by the bonding pressure and temperature but also by the surface roughness. When the faying surfaces are pressed each other, the voids dre formed on the bond-interface due to the surface roughness. Thus, we cannot achieve the full intimate contact (adhesion) immediately after pressing the faying surfaces. In this study, we analyzed the process of the void shrinkage by the computer simulations. Also, we developed the algorithm to estimate the bonding process under the extend conditions of the pressure and temperature. Besides, we produced the algorithm for determining the optimum bonding conditions by taking account of the scattering of the surface roughness. The main results obtained is as follows.1) the void shrinkage process is controlled by the pressure and temperature. the activation energy of the void shrinkage is obtained by 1n(T/t_v)-(1/T) plots, where T is the absolute temperature, and t_v the time required to attain the void shrinkage of a certain volume. 2) When the void shrinkage is dominantly controlled by the diffusion, the stress exponent n for the time tv is in the range of -1 to -0.3 ( n is not less than - 1 ). 3) The void shrinkage is largely influenced by the spacing between the voids. 4) The introduction of fine surface asperities promotes the bonding process. 5) The spacing between the voids changes during bonding. This is due to the scattering the surface roughness. This is exactly estimated by the overlap process of the profiles of the faying surfaces. 6) By taking account of the change in the void spacing, it is possible to estimate the complete bonding time if the scattering is not so large. 7) It is found that the algorithm developed in the present study is a powerful tool to determine the optimum bonding conditions. 8) the applicability of this algorithm is verified by the experiments.
期刊论文(10)
专著(0)
科研奖励(0)
会议论文
登录
查看更多内容
Y. TAKAHASHI, F. UENO, K. NISHIGUCHI: "A NUMERICAL ANALYSIS OF THE VOID-SHRINKAGE PROCESS CONTROLLED BY SURFACE DIFFUSION" ACTA METALLURGICA. Vol.36. 3007-3018 ((1988))
Y. TAKAHASHI、F. UENO、K. NISHIGUCHI:“表面扩散控制的空洞收缩过程的数值分析”冶金学报。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
高橋康夫,西口公之: 国際溶接学会年次大会(1988年7月4〜11日ウィーン).
Yasuo Takahashi、Kimiyuki Nishiguchi:国际焊接学会年会(1988 年 7 月 4-11 日,维也纳)。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
高橋康夫, 上野文義, 西口公之: Acta Metallugica.
高桥康夫、上野文吉、西口公之:冶金学报。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
高橋康夫,上野文義,西口公之: "A Numerical Analysis of Void-shrinkage Process controlled by Surface-diffusion" Acta Metallugica. 36. 3007-3018 (1988)
Yasuo Takahashi、Fumiyoshi Ueno、Kimiyuki Nishiguchi:“表面扩散控制的空洞收缩过程的数值分析”Acta Metallugica。36。3007-3018(1988)
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
Y. TAKAHASHI, K. NISHIGUCHI: "DETERMINATION OF OPTIMUM PROCESS CONDITIONS IN SOLID PHASE BONDING BY A NUMERICAL MODEL" WELDING IN THE WORLD Vol. 27 No.3/4 P. 100-113 (1989).
Y. TAKAHASHI、K. NISHIGUCHI:“通过数值模型确定固相键合的最佳工艺条件”《世界焊接》卷。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
共 10 条
Japanese medieval cities in Eurasia
-
批准号:15H04110
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$10.73万
-
财政年份:2015
-
负责人:TAKAHASHI Yasuo
-
依托单位:
Multi-input and multi-output flexible nanodot-array devices operating with multiple valued ReRAM
-
批准号:24360128
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$11.9万
-
财政年份:2012
-
负责人:TAKAHASHI Yasuo
-
依托单位:
Creation of Ryukyu architectural history
-
批准号:24656362
-
项目类别:Grant-in-Aid for Challenging Exploratory Research
-
资助金额:$2.5万
-
财政年份:2012
-
负责人:TAKAHASHI Yasuo
-
依托单位:
Spatial structure of the capital in East Asia Middle Ages
-
批准号:21360302
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$11.32万
-
财政年份:2009
-
负责人:TAKAHASHI Yasuo
-
依托单位:
Research of Multiple-Input and Multiple-Output Functional Devices by Means of Nanodot Array
-
批准号:17201029
-
项目类别:Grant-in-Aid for Scientific Research (A)
-
资助金额:$32.78万
-
财政年份:2005
-
负责人:TAKAHASHI Yasuo
-
依托单位:
Urban Development in Ryukyu Kingdom
-
批准号:17360305
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$9.5万
-
财政年份:2005
-
负责人:TAKAHASHI Yasuo
-
依托单位:
TXNIP expression and mucosal immunity in the epithelium in patients with inflammatory bowel disease
-
批准号:16591359
-
项目类别:Grant-in-Aid for Scientific Research (C)
-
资助金额:$1.66万
-
财政年份:2004
-
负责人:TAKAHASHI Yasuo
-
依托单位:
Environmental Culture in Ryukyu Kingdom
-
批准号:14350334
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$8.26万
-
财政年份:2002
-
负责人:TAKAHASHI Yasuo
-
依托单位:
Micro-interface formation control of electronic devises based on analysis of solid state bonding mechanism
-
批准号:14350384
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$10.82万
-
财政年份:2002
-
负责人:TAKAHASHI Yasuo
-
依托单位:
Development of capital in the Middle Ages of Japan
-
批准号:11450231
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$8.9万
-
财政年份:1999
-
负责人:TAKAHASHI Yasuo
-
依托单位:
Analysis of Mechanism of Very fine Agglutinative Bonding Between Fine Gold Lead and Electric Pad On Integrated Circuit.
-
批准号:10450273
-
项目类别:Grant-in-Aid for Scientific Research (B).
-
资助金额:$7.04万
-
财政年份:1998
-
负责人:TAKAHASHI Yasuo
-
依托单位:
Historical Study on interaction between City and Nature in Japan
-
批准号:08405041
-
项目类别:Grant-in-Aid for Scientific Research (A)
-
资助金额:$13.89万
-
财政年份:1996
-
负责人:TAKAHASHI Yasuo
-
依托单位:
Micro-thermocompression Bonding Mechanism and Modeling for Electronics Devise Interconnection
-
批准号:07455291
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$4.86万
-
财政年份:1995
-
负责人:TAKAHASHI Yasuo
-
依托单位:
Historical Study on Mediaval House of Japan
-
批准号:04451119
-
项目类别:Grant-in-Aid for General Scientific Research (B)
-
资助金额:$3.33万
-
财政年份:1992
-
负责人:TAKAHASHI Yasuo
-
依托单位:
Studies n brain-specific proteins (including myelin protein)using recombinant DNA technigue and its application to neurohistology
-
批准号:60300011
-
项目类别:Grant-in-Aid for Co-operative Research (A)
-
资助金额:$5.06万
-
财政年份:1985
-
负责人:TAKAHASHI Yasuo
-
依托单位:
海外基金