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Study on optically controlled optical devices

Study on optically controlled optical devices
光控光学器件的研究
批准号:
02302048
负责人:
SUEMATSU Yasuharu
金额:
$6.08万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Co-operative Research (A)
财政年份:
1990
资助国家:
日本
项目状态:
已结题
起止时间:
1990 至 1991

项目摘要

项目成果

SUEMATSU Yasuharu的其他基金

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中文摘要
翻译
本研究的主要目的是为光控光学器件奠定基础。本研究得到的具体结果如下:(a)光控光学器件晶体生长:利用OMVPE生长技术制备量子线、量子盒结构等超精细结构。(b)光控光学器件的制备及其基本理论:制备了利用半导体量子阱结构的非线性光学器件、利用量子阱结构子带跃迁的光控调制器件和集成型光开关/调制器,并提出了利用量子微腔自发发射控制的发光器件。(c)光控光学器件的特性:从理论上研究了光控光学器件的特性,重点研究了光控光学器件的超高速运行。
英文摘要
The main purpose of this study is to establish the basis of optically controlled optical devices. Specific results obtained in this research are as follows.(a) Crystal growth for optically controlled optical devices :Ultra-fine structure such as Quantum-wire and quantum-box structure were fabricated using OMVPE growth technology.(b) Fabrication and basic theory of optically controlled optical devices :Nonlinear optical devices using semiconductor quantum well structure, optically controlled modulation devices using sub-band transition of quantum well structure, and integration type optical switch/modulator were fabricated and light emitting devices using the spontaneous emission control from quantum micro cavity was proposed.(c) Characteristics of optically controlled optical devices :The characteristics of optically controlled optical devices were theoretically investigated focusing on their ultra high speed operation.
期刊论文(23)
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科研奖励(0)
会议论文
Y.Miyake: "Room temperature operation of GaInAsーGaInAsPーInP SCH multiーquantumーfilm laser with narrow wireーlike active region" IEEE Photon.Technol.Lett.3. 191-192 (1991)
Y. Miyake:“具有窄线状活性区域的 GaInAs-GaInAsP-InP SCH 多量子薄膜激光器的室温操作”IEEE Photon.Technol.Lett.3 (1991)。
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T.Yamamoto: "OMVPE buried ultraーfine periodic structures in GaInAs and InP" Electron.Lett.26. 875-876 (1990)
T.Yamamoto:“OMVPE 在 GaInAs 和 InP 中埋入超精细周期结构”Electron.Lett.26 (1990)。
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M.Watanabe: "Low temperature (〜420℃) epitaxial growth of CaF2/Si(111)by IonizedーClusterーBeam technique" Japan.J.Appl.Phys.29. 1803-1804 (1990)
M.Watanabe:“通过离子化-簇束-束技术实现CaF2/Si(111)的低温(~420℃)外延生长”Japan.J.Appl.Phys.29 1803-1804 (1990)。
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K.G.Ravikumar: "Lowーdamage GaInAs(P)/InP nanometer structure by lowーpressure ECRーRIBE" Japan.J.Appl.Phys.29. L1744-L1746 (1990)
K.G.Ravikumar:“低压 ECR-RIBE 低损伤 GaInAs(P)/InP 纳米结构”Japan.J.Appl.Phys.29 (1990)。
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共 18 条
    Digital Methods for Building and Presenting Technology Archives
    • 批准号:
      15300039
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $10.37万
    • 财政年份:
      2003
    • 负责人:
      SUEMATSU Yasuharu
    • 依托单位:
    Research on ultra-high-speed operation of semiconductor optical integrated circuits
    • 批准号:
      63302034
    • 项目类别:
      Grant-in-Aid for Co-operative Research (A)
    • 资助金额:
      $12.93万
    • 财政年份:
      1988
    • 负责人:
      SUEMATSU Yasuharu
    • 依托单位:
    Research of a hig-performance dynamic-single-mode laser
    • 批准号:
      60850060
    • 项目类别:
      Grant-in-Aid for Developmental Scientific Research
    • 资助金额:
      $11.78万
    • 财政年份:
      1985
    • 负责人:
      SUEMATSU Yasuharu
    • 依托单位:
    海外基金