Ultra-thin film Growth of the oxide ion conducting material on the porous substrate by thermal CVD

followings are main accomplishment of this研究解决方案和研究策略现在在哪里。1.我们投资从视图点chemical reaction engineering how to model CVD film growth processes for zro_2y_2_3和YSZ (zro_2 stabilized by y_2_3) during a low pressure metal organic CVD (LPMOCVD) usingDPM complex as source materialand determined the reaction rate constants as a function of the temperature by means of a semi-micro2.我们开发了三个不同的简单卡洛模拟代码。reproduce the film shape grown on and in a contact hole of arbitrary form. This code provides aquantitative discussion about the film growth on porous substrates.3.Applying this code to differentLPCVD systems (lio_2, nb_2_3 and ZnO)，we also determined the value of each reactive sticking coefficient and activation energy from thesimulated step coverage on a contact hole. The values of these sticking coefficients for The metaloxide are large at high temperature，and decrease dramatically with decreasing temperature.4.Based on the above findings，我们提供一个novel method to occlude a hole on a porous substrate with thin film by a modifiedthermal CVD. During the first stage，电影growth is processed at higher temperature to reduce the hole opening by making largetransversal bulges of grown film near the opening with less deposition depth in the hole. During thenext stage,the operating temperature is reduced to occlude the opening quickly.This method was confirmed to beeffective by the deposition experiments.5.At the present，we undertake the optimization of this process.We intend to perfrom the choke tests to the samplefabricated by the above method using a permeability measurement apparatus, and in additionmeasure the actual oxide ion conductance of the fabricated YSZ film。

The followings are main accomplishment of this research, problems unsolved and research policies from now on.1.We investigated from the view point of chemical reaction engineering how to model CVD film growth processes for ZrO_2, Y_2O_3 and YSZ (ZrO_2 stabilized by Y_2O_3) during a low pressure metal organic CVD (LPMOCVD) using DPM complex as source material, and determined the reaction rate constants as a function of the temperature by means of a semi-micro and a macro simulation.2.We developed a three dimensional simple Monte Carlo simulation code to reproduce the film shape grown on and in a contact hole of arbitrary form. This code provides a quantitative discussion about the film growth on porous substrates.3.Applying this code to different LPCVD systems (LiO_2, Nb_2O_3 and ZnO) , we also determined the value of each reactive sticking coefficient and activation energy from the simulated step coverage on a contact hole. The values of these sticking coefficients for the metal oxide are large at high temperature, and decrease dramatically with decreasing temperature.4.Based on the above findings, we proposed a novel method to occlude a hole on a porous substrate with thin film by a modified thermal CVD.・During the first stage, film growth is processed at higher temperature to reduce the hole opening by making large transversal bulges of grown film near the opening with less deposition depth in the hole. During the next stage, the operating temperature is reduced to occlude the opening quickly.This method was confirmed to be effective by the deposition experiments.5.At the present, we undertake the optimization of this process.We intend to perfrom the choke tests to the sample fabricated by the above method using a permeability measurement apparatus, and in addition, measure the actual oxide ion conductance of the fabricated YSZ film.