课题基金 / 基金详情

Advanced Science and Technology for Semiconductor Materials and Devices

Advanced Science and Technology for Semiconductor Materials and Devices
半导体材料与器件先进科学技术
批准号:
05044206
负责人:
KUKIMOTO Hiroshi
金额:
$0.0万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Overseas Scientific Survey.
财政年份:
1993
资助国家:
日本
项目状态:
已结题
起止时间:
1993 至 --

项目摘要

项目成果

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中文摘要
翻译
近年来,半导体微结构中的量子尺寸效应及其在新型电子和光电子器件中的应用得到了越来越多的研究。这一领域的发展在很大程度上依赖于先进科学技术的进步,因此需要国际研究合作。韩国是在该领域进行国际研究合作的最合适的伙伴国之一。因此,该项目的目的是在科学信息交流和相互合作的基础上,促进日本和韩国研究机构对半导体材料和器件的先进科学技术的研究。本项目的活动和成果如下:1)研究的材料包括SiGe, III-Vs (AlGaAs和GaInPAs)和II-VIs (ZnSe和CdSe)。利用分子束外延和金属有机气相外延,制备了由这些材料组成的超晶格、量子线和量子点等多种微观结构。还对这些材料和结构进行了针对其器件应用的表征。1993年9月在札幌举行了关于半导体材料和器件先进科学和材料的日韩研讨会,日本有17人参加,韩国有9人参加。讨论了本项目的合作研究成果。3) 1993年12月在韩国举行的会议上对该项目进行了总结,日本派出了4名成员。借此机会,讨论了日本和韩国未来进一步的研究合作。综上所述,该研究项目的目的已成功实施,取得了显著的成果,并有望进一步合作。
英文摘要
Recently, there has been an increasing research effort in the field of quantum size effects in semiconductor microstructures and their application for novel electronic and optoelectronic devices. The development of this field depends largely on progress in advanced science and technology, and thus needs international research cooperation. Korea is one of the most appropriate partner countries for the international research cooperation in this field.The purpose of this project is, therefore, to promote the researches on advanced science and technology for semiconductor materials and devices in Japanese and Korean research institutes, based on an exchange of scientific information and mutual collaborations.The activities and achievements of this project are as follows.1) The materials investigated include SiGe, III-Vs (AlGaAs and GaInPAs) and II-VIs (ZnSe and CdSe). A variety of micostructures such as superlattices, quantum wires and quantum dots consisted of these materials were fabricated by using molecular beam epitaxy and metalorganic vapor phase epitaxy. Characterization of these materials and structures directed toward their device applications was also performed.2) Japan-Korea Symposium on Advanced Science and Materials for Semiconductor Materials and Devices was held in September 1993, in Sapporo with participants of 17 from Japan and 9 from Korea. Discussion was made about the results of collaborative studies of this project.3) Summary of this project was made at a meeting held in December, 1993 in Korea, where 4 Japanese members were sent. By using the opportunity, further research cooperation between Japan and Korea in the future was discussed.In summary, the purpose of this research project was successfully carried out with remarkable achievements and promise for further collaborations.
期刊论文(20)
专著(0)
科研奖励(0)
会议论文
A.Yoshikawa: "A New In-situ Optical Probing Method in Heteroepitaxy:Surface Photo-Interference(SPI)and Its Application to the Study of ZnSe MOMBE Growth Process" 3rd Japan-Korea Joint Symposium“Advanced Science and Technology of Semiconductor Materials an
A. Yoshikawa:“异质外延中的一种新的原位光学探测方法:表面光干涉(SPI)及其在ZnSe MOMBE生长过程研究中的应用”第三届日韩联合研讨会“半导体材料与先进科学技术”
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K.Y.Lim: "Photoluminescence and Raman Scattering Analysis of In_xGa_<1-x>As Epilayers Grown on GaAs by Low-Pressure Metalorganic Chemical Vapor Deposition" 3rd Japan-Korea Symposium on Advanced Science and Technology for Semiconductor Materials and Device
K.Y.Lim:“低压金属有机化学气相沉积在GaAs上生长的In_xGa_<1-x>As外延层的光致发光和拉曼散射分析”第三届日韩半导体材料与器件先进科学技术研讨会
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Y.Shiraki: "Formation of SiGe/Si Quantum Wells and Their Optical Properties" 3rd Japan-Korea Joint Symposium“Advanced Science and Technology of Semiconductor Materials and Devices". 1-6 (1993)
Y. Shiraki:“SiGe/Si量子阱的形成及其光学性质”第三届日韩联合研讨会“半导体材料与器件的先进科学技术”1-6(1993)。
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S.Park: "Origin of the Long-Wavelength-Side Peak in Al_XGa_<1-X>As:Si Light-Emitting Diodes" Jpn.J.Appl.Phys.32. 3197-3198 (1993)
S.Park:“Al_XGa_<1-X>As:Si 发光二极管中长波长侧峰的起源”Jpn.J.Appl.Phys.32。
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共 20 条
    Advanced Science and Technology for Semiconductor Materials and Devices
    • 批准号:
      06044077
    • 项目类别:
      Grant-in-Aid for international Scientific Research
    • 资助金额:
      $1.15万
    • 财政年份:
      1994
    • 负责人:
      KUKIMOTO Hiroshi
    • 依托单位:
    Selective area growth of compound semiconductors induced by electron-beam irradiation
    • 批准号:
      03402023
    • 项目类别:
      Grant-in-Aid for General Scientific Research (A)
    • 资助金额:
      $16.77万
    • 财政年份:
      1991
    • 负责人:
      KUKIMOTO Hiroshi
    • 依托单位:
    Development of Blue-Emitting EL devices with High Color-Purity and Brightness
    • 批准号:
      01850006
    • 项目类别:
      Grant-in-Aid for Developmental Scientific Research
    • 资助金额:
      $12.93万
    • 财政年份:
      1989
    • 负责人:
      KUKIMOTO Hiroshi
    • 依托单位:
    海外基金