Fundamental Research of the Delamination by H^+ Implantation

本课题主要研究了Sic支架的脱层问题。以不同的能量和剂量将氢离子注入Si中。SiC和GaAs晶体，在5 × 10 ~ 4<16>离子/cm ~ 2的剂量下，激光在Si中分层。这种情况与能量密切相关。分层厚度可随能量的增加而减小。在SiC中，当剂量大于2 × 10 ~（13）<17>ions/cm ~ 2时，发生分层，而在GaAs中则不发生分层。随着退火时间的增加，注入温度逐渐降低，在120分钟退火时，注入温度可达400 ℃左右。

Delamination of Stand Sic is studied in this project. Hydrogen ion is implanted at different energios and doses into Si. SiC and GaAs crystal it hasbeen studbee from these experiment that then lages is delaminated in Si at doses abore 5*10^<16> ions/cm^2. This condtion is cveakly dependent on energy. Thickness of the delaminetion canbe caried lireaoly with energy. This delamination, however, occurs at doses above 2*10^<17> ions/cm^2 in SiC and does not occur in GaAs.Delamination tenperature, Td, defined by occuring of the delamination, is oooc at 10min in Si. It decreases with the increasing of annealing time and reachos 400ﾟC in annealing for 120min.These ion implantation and annealing cenditions are usefal for the manufacture of advanced Solwater.