Establishment of Structural Analysis Method of High Resolution X-ray Photoelectron Diffraction for Hetero-epitaxial Growth Surface and Interface Systems

本课题的主要目的是建立高分辨率x射线光电子衍射对异质外延生长表面和界面系统的结构分析方法。1998财政年度，购买了一台能量分辨率高、计数效率高的电子能量分析仪。设计并制作了一种微机控制的样品旋转机械手。设计了一种球形μ金属超高真空室。将这些元件组装成一台高分辨率光电子衍射光谱仪，并进行了性能测试。我们还去了ALS同步辐射设备进行了β-SiC(001)-c（2x2）表面的光电子衍射研究，测量了C1s的PED模式，并对其进行了分析。在1999财政年度，利用Al Kα和Mg Kα实验室光源，在Si（001）表面形成的Bi纳米线上进行了高分辨率光电子衍射光谱仪的试运行，以确定Bi原子的排列。然后，我们把光谱仪带到位于筑波的同步辐射设施KE的光子工厂。波束线用于测量Si(001)1x2-Sb表面的Si 2p表面核级分量PED模式。随后分析了PED模式以确定Si 2p分量的来源。在2000财政年度，PED光谱仪再次被带到光子工厂，用于测量吸附在Si（001）表面的乙烯的c1s PED模式。PED图案随后被分析以确定乙烯在Si上的几何形状（001）。所有这些结果证明了所构建的PED光谱仪和高分辨率光电子衍射技术的重要性，并可以在未来几年用于其他许多异质外延系统。

The main theme of this project is to establish the structural analysis method of high resolution x-ray photoelectron diffraction for hetero-epitaxial growth surface and interface systems. In fiscal year 1998, an electron energy analyzer with high energy-resolution and high-counting efficiency was bought. A sample manipulator with computer control sample-rotation was designed and made. A spherical μ-metal ultra-high-vacuum chamber was designed made made. All these components were assembled into a high-resolution photoelectron diffraction spectrometer and a performance test was done. We have also gone to ALS synchrotron radiation facility to experience photoelectron diffraction study on β-SiC(001)-c(2x2) surface and measured C1s PED patterns and later analyzed the patterns.In fiscal year 1999, a test run of the constructed high-resolution photoelectron diffraction spectrometer was made on a nano-wire of Bi formed on Si(001) surface to determine arrangement of Bi atoms using laboratory light sources of Al Kα and Mg Kα. Then, we brought the spectrometer to Photon Factory at KE, a synchrotron radiation facility in Tsukuba. An undulater beam-line was used to measure Si 2p surface-core-level component PED patterns for Si(001)1x2-Sb surface. The PED patterns were later analyzed to determine the origin of the Si 2p component.In fiscal year 2000, the PED spectrometer again was brought to Photon Factory to measure C 1s PED patterns for ethylene adsorbed on Si(001) surface. The PED patterns were later analyzed to determine the geometry of ethylene on Si(001).All these results proved that the constructed PED spectrometer and the technique of high-resolution photoelectron diffraction are vital and can be used for other many hetero-epitaxial systems for years to come.