Properties of nitrogen incorporated III-V semiconductors by reactive sputtering.

近年来，由于GaAsN、InSbN和GaPN等含氮III-V族化合物的禁带宽度随N组分的变化而变化，因此它们在光学器件中具有潜在的应用前景，因此它们的研究受到了广泛的关注。然而，由于晶体GaAsN和GaPN中的氮成分被限制在小于百分之几，这些合金的光学和电子性能还没有得到很好的理解。本工作的目的是研究用溅射法制备的宽N组分非晶InSb_<1-x>N_x和GaAs_<1-x>N_x薄膜。研究结果如下：1.在<1-x>溅射反应器中，以InSb为靶，通过系统地改变N分压（Ar：N2 =1：0，9：1，1：1，0：1）制备了非晶InSb_ N_x薄膜。光谱椭圆偏振法（SE）证明了氮掺入引起的光学变化。光学带隙能量从0.2 eV移动到1.4 eV的N组分的增加。在GaAsN和GaPN晶体中观察到的带隙能量随N浓度的增加而红移的现象并没有消失.用Ga靶在100%N_2中溅射制备了N组分x=0的GaN薄膜。薄膜的结晶度变化很大，从非晶到强（0001）面优先。首次在溅射沉积的GaN多晶薄膜中观察到光致发光.在<1-x>溅射反应器中，以GaAs为靶，通过系统地改变N分压（Ar：N2 =1：0，9：1，3：1，1：1，0：1）制备了非晶GaAs_ N_x薄膜。光谱椭圆偏振法（SE）证明了氮掺入引起的光学变化。光学带隙能量从1.0 eV移动到3.2 eV的N组分的增加。在低N浓度下，观察到GaAsN晶体中观察到的带隙能量的红移。

Recently much attention has been paid to study of nitrogen-containing III-V compounds such as GaAsN, InSbN and GaPN due to their potential application in optical devices, because their band gap vary widely as a function of the N composition. However, Since the nitrogen composition in crystalline GaAsN and GaPN was limited to less than a few percent, optical and electronic properties of these alloys are not well understood. The aim of this work is to study amorphous InSb_<1-x>N_x and GaAs_<1-x>N_x films with the wide N composition prepared by sputtering. The results are follows.1. Amorphous InSb_<1-x>N_x films were prepared from InSb target by a systematic variation of the N partial pressure (Ar : N_2=1 : 0,9 : 1,1 : 1,0 : 1) in the sputtering reactor. Optical changes, induced by nitrogen incorporation, have been evidenced by spectroscopic ellipsometry (SE). Optical band gap energy shift from 0.2 eV to 1.4 eV with increase of N composition. The red shift of band gap energy with increase of N concentration as observed in crystal GaAsN and GaPN was not observed.2. GaN films of N composition x=0 were prepared from Ga target by sputtering in 100% N_2. The crystallinity of the films varied widely from amorphous to strong (0001) plane preferred. Photoluminescence was first observed from sputter-deposited polycrystalline GaN film.3. Amorphous GaAs_<1-x>N_x films were prepared from GaAs target by a systematic variation of the N partial pressure (Ar : N_2=1 : 0,9 : 1,3 : 1,1 : 1,0 : 1) in the sputtering reactor. Optical changes, induced by nitrogen incorporation, have been evidenced by spectroscopic ellipsometry (SE). Optical band gap energy shift from 1.0 eV to 3.2 eV with increase of N composition. The red shift of band gap energy as observed in crystal GaAsN was observed in the small N concentration.