Crystal growth of InGaAsN alloy using ECR plasma and basic investigation for realizing OEIC

在本研究中，我们尝试<1-X><1-Y>用ECR分子束外延法在名义Si（001）和Si（111）衬底上外延生长In_XGa_ As_YN_合金。在晶格匹配的情况下，Si上的In_XGa_<1-X>As_YN_<1-Y>合金（x=0）的合金成分（Y）估计为约0.2。期望具有晶格匹配的Si上的In_XGa_<1-X>As_YN_<1-Y>合金（y = 0）的合金组成（Y）小于0.2。因此，生长出结晶质量良好的In_xGa_<1-X>As_YN_x<1-Y>合金晶体是可能的，并且与Si的晶格常数匹配良好。In_xGa_<1-X>As_YN_<1-Y>（x=0）合金的晶体质量和晶体结构与As掺杂量密切相关。在轻掺杂As杂质时，晶体结构具有锌钛矿型，而在重掺杂时，晶体结构具有六方型，并且晶体质量大大恶化。此外，ECR等离子体中的惰性氮分子阻碍了GaN的生长，并大大降低了GaN外延层的生长速率。我们已经研究了这种阻碍现象是否在In_XGa_<1-X>As_YN_<1-Y>（x和y ≥ 0）合金的外延生长中出现。

In this research, we tried to grow epitaxial growth of In_XGa_<1-X>As_YN_<1-Y> alloy on nominal Si(001) and Si(111) substrates using ECR-MBE method. The alloy composition (Y) of In_XGa_<1-X>As_YN_<1-Y> alloy (x=0) on Si with lattice matching is estimated to be about 0.2. The alloy composition (Y) of In_XGa_<1-X>As_YN_<1-Y> alloy (y≠0) on Si with lattice matching is expected to be less than 0.2. Therefore, The crystal growth of In_XGa_<1-X>As_YN_<1-Y> alloy with good crystalline quality would be possible and well-matched with lattice constant of Si. However, the crystalline quality and crystal structure of In_XGa_<1-X>As_YN_<1-Y> alloy (x=0) are strongly dependent on the quantity of As-doping. The crystal structure has a zincblende type in light doping of As impurity while the crystal structure has a hexagonal type and the crystalline quality is greatly deteriorated in heavy doping. Moreover, the inert nitrogen molecules during ECR plasma obstructs the growth of GaN and drastically lowers the growth rates of GaN epitaxial layers. We have investigated whether this obstruction phenomenon occurs even in epitaxial growth of In_XGa_<1-X>As_YN_<1-Y> alloy (x and y≠0) or not at present.