Development of Silicon-Based Surface-Emitting Ballistic Electron Source and Its Application to Flat Panel Display

为了阐明纳米晶硅（nc-Si）二极管中的弹道电子发射机制并开发新的平板显示器，在制造工艺、载流子输运和实现信息显示的技术方面进行了基础研究。主要研究结果和意义如下：1.通过引入nc-Si层的纳米结构控制技术和优化电化学处理的工艺参数，在不影响效率的情况下，在直流操作下显著稳定了弹道发射的稳定性。此外，通过皮秒飞行时间测量和蒙特-卡罗模拟的实验和理论分析表明，弹道电子在具有良好控制界面的nc-Si层中更有效地产生，并且弹道发射是由于特定的高场载流子传输。 ...更多信息 rt在互连的nc-Si颗粒中。用上述电子发射体作为荧光屏的激发源，以3.5mm的真空间距放置，用多晶硅薄膜技术研制出了一种简单矩阵的全色平板显示器。原型简单矩阵2.6英寸显示器的发射图像图案具有足够的均匀性，由于垂直于器件表面的高能和准直电子发射，具有很小的串扰，具有168（RGB）×126像素和50 μm间距。该器件在动态图像显示方面也表现出了足够的性能.进一步开发一种新的发射显示器这种器件在玻璃基板上的低温加工的证明是非常重要的大面积平板显示器的开发与高性能。作为另一个应用，也已经证明，在nc-Si层中产生的弹道电子对于直接激发沉积在nc-Si二极管表面上的荧光膜而不喷射到真空中是有用的。这为新型固态表面发射光源和显示器开辟了道路。少

To clarify the ballistic electron emission mechanism in nanocrystalline silicon (nc-Si) diodes and to develop a new flat panel display, fundamental studies have been conducted in terms of fabrication processing, carrier transport, and technological aspects for implementing information display. The results and significances are summarized as follows.1. Stabilization of nc-Si ballistic emitter with a high efficiencyBy introducing a technique for nanostructural control of nc-Si layer and optimizing the process parameters for electrochemical treatment, the stability of the ballistic emission under a dc operation has been significantly stabilized without affect on the efficiency. Also, the experimental and theoretical analyzes by picoseconds time-of-flight measurements and Monte-Carlo simulation, suggest that ballistic electrons are generated more efficiently in the nc-Si layer with a well controlled interfaces, and that the ballistic emission is due to a specific high-field carrier transpo … More rt in interconnected nc-Si particles.2. Prototyping of a flat panel displayUsing the above-mentioned electron emitter as an excitation source of a fluorescent screen placed at a vacuum spacing of 3.5 mm, a simple-matrix full-color flat panel display has been developed by polycrystalline silicon film technology. The emission image pattern of a proto-type simple-matrix 2.6 inches display of a 168(RGB)×126 pixels with a 50 μm pitch was sufficiently uniform with little cross talk due to the energetic and collimated electron emission in perpendicular to the device surface. The device also shows a sufficient performance for dynamic image display.3. Further development of a new emissive displayThe demonstrated availability of this device for low-temperature processing on glass substrates is very important for development of large-area flat-panel displays with high performances. As another application, it has also been demonstrated that generated ballistic electrons in nc-Si layers are useful for direct excitation of fluorescent films deposited on the nc-Si diode surface without ejecting into vacuum. This opens paths for novel solid-state surface-emitting light source and display. Less