Control of physical properties induced in silicon nanostructure and device applications
Control of physical properties induced in silicon nanostructure and device applications
批准号:
18063007
负责人:
KOSHIDA Nobuyoshi
金额:
$26.62万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research on Priority Areas
财政年份:
2006
资助国家:
日本
项目状态:
已结题
起止时间:
2006 至 2009
中文摘要
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英文摘要
The physical properties induced in quantum-sized silicon have been studied, including their applications. Major results are summarized as follows.(1) Luminescence: The blue emission was enhanced by high quality oxidation, and then bluephosphorescence was generated. As a related photonic effect, avalanche photoconduction was observed.(2) Ballistic electron emission: The usefulness has been confirmed in various media: parallel EBlithography and highly sensitive image-pickup in vacuum, VUV light emission in atmospheric pressureXe gas ambience, and hydrogen gas generation and thin solid film deposition in solutions.(3) Sound emission: It was demonstrated that the emitter is compatible with the use as 3-D objectsensing probe, non-contact actuator, digital speaker, and bio-acoustic communication.
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Control of Channel Resistance on Metal Nanowires by Electromigration Patterning Method
电迁移图案化方法控制金属纳米线上的沟道电阻
DOI:
--
发表时间:
2009
期刊:
Journal of Vacuum Science & Technology B 27
影响因子:
--
作者:
[K. Takahashi, Y. Tomoda, S. Itami, J. Shirakashi]
通讯作者:
J. Shirakashi
Specific spectral features in electron emission from nanocrystalline poly-silicon quasi-ballistic cold cathode detected by an angle-resolved high resolution analyzer
角分辨高分辨率分析仪检测纳米晶多晶硅准弹道冷阴极电子发射的特定光谱特征
DOI:
--
发表时间:
2008
期刊:
J. Vac. Sci. Technol. B 26
影响因子:
--
作者:
[M.Hamada, M.Toyofuku, T.Miyano, T.Nakafjima-Kambe, H.Uchiyama, N.Nomura., 豊福雅典, Masanori Toyofuku, Masanori Toyofuku, A.Kojima, T. Ohta, 關義親, D. Sakai]
通讯作者:
D. Sakai
ナノシリコン電子源-電子加速機能と応用展開(招待講演)
纳米硅电子源——电子加速功能及应用开发(特邀报告)
DOI:
--
发表时间:
2009
期刊:
影响因子:
--
作者:
[越田信義N, 太田敢行, B. ジェローズ]
通讯作者:
B. ジェローズ
DOI:
--
发表时间:
2008
期刊:
影响因子:
--
作者:
[N. Koshida, B. Gelloz]
通讯作者:
B. Gelloz
Sound emission from nanocrystalline silicon device under operation of electroluminescence
电致发光下纳米晶硅器件的声发射
DOI:
--
发表时间:
2008
期刊:
影响因子:
--
作者:
[B. Gelloz, T. Shibata and N. Koshida]
通讯作者:
T. Shibata and N. Koshida
共 95 条
Applications of nanosiicon ballistic emitter in liquids, gases, and solids
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批准号:21241037
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$13.4万
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财政年份:2009
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负责人:KOSHIDA Nobuyoshi
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依托单位:
Clarifying the Photonic, Electronic, and Acoustic Characteristics of Quantum-sized Silicon for Functional Integration
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批准号:18206039
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$31.28万
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财政年份:2006
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负责人:KOSHIDA Nobuyoshi
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依托单位:
Ballistic Electron Effect in Nanocrystalline Silicon and its Device Applications
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批准号:15201031
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$28.62万
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财政年份:2003
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负责人:KOSHIDA Nobuyoshi
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依托单位:
Development of Silicon-Based Surface-Emitting Ballistic Electron Source and Its Application to Flat Panel Display
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批准号:13355016
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$26.71万
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财政年份:2001
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负责人:KOSHIDA Nobuyoshi
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依托单位:
A Study on Haptic Interfaces
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批准号:11450160
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$7.68万
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财政年份:1999
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负责人:KOSHIDA Nobuyoshi
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依托单位:
Development and Photonic Integration of Efficient and Stable Silicon-Based LED
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批准号:10355015
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$15.68万
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财政年份:1998
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负责人:KOSHIDA Nobuyoshi
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依托单位:
Development of Light-Emitting Devices Based on Poly-crystalline Silicon Films and Application to Large-Area Display
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批准号:08555083
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$11.33万
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财政年份:1996
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负责人:KOSHIDA Nobuyoshi
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依托单位:
Study of Visible Luminescence Mechanism in Porous Silicon and Its Devvelopment into Silicon-Based Optoelectronic Integration
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批准号:07405016
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$21.82万
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财政年份:1995
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负责人:KOSHIDA Nobuyoshi
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依托单位:
Ultafine Lithography by Oxide Ion Resists and Its Applications.
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批准号:01550304
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项目类别:Grant-in-Aid for General Scientific Research (C)
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资助金额:$1.15万
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财政年份:1989
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负责人:KOSHIDA Nobuyoshi
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依托单位:
海外基金