Applications of nanosiicon ballistic emitter in liquids, gases, and solids
Applications of nanosiicon ballistic emitter in liquids, gases, and solids
批准号:
21241037
负责人:
KOSHIDA Nobuyoshi
金额:
$13.4万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (A)
财政年份:
2009
资助国家:
日本
项目状态:
已结题
起止时间:
2009 至 2011
中文摘要
阐明了纳米硅弹道电子发射器在液体、气体和固体中的特性函数及其可能的应用。(1)液体操作:向溶液中注入高还原性电子,可诱导半导体(硅、锗)和金属的薄膜沉积。(2)气体操作:证实Xe分子的内部电子激发发出真空紫外光而不放电。(3)固体运行:通过对弹道效应的理论分析,明确了在纳米硅二极管中观测到的雪崩光导的基本物理性质。
英文摘要
The characteristic functions and their possible applications of nanosilicon ballistic electron emitter were clarified in liquids, gases, and solids.(1) Operation in liquids : Injection of highly reducing electrons into solutions induces thin film deposition of semiconductors(silicon and germanium) and metals.(2) Operation in gases : It was confirmed that internal electronic excitation of Xe molecules emits vacuum-ultraviolet light without discharging.(3) Operation in solids : The underlying physics of avalanche photoconduction observed in nanosilicon diode was made clear by theoretical analyses of ballistic effect.
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DOI:
--
发表时间:
2011
期刊:
影响因子:
--
作者:
[N.Koshida, T.Ohta, Y.Hirano, R.Mentek, B.Gelloz]
通讯作者:
B.Gelloz
Photonic, electronic, and acoustic applications of nanosilicon (Invited).
纳米硅的光子、电子和声学应用(特邀)。
DOI:
--
发表时间:
2010
期刊:
影响因子:
--
作者:
[N.Koshida, T.Ohta, R.Mentek, Y.Hirano, B.Gelloz]
通讯作者:
B.Gelloz
DOI:
--
发表时间:
2011
期刊:
影响因子:
--
作者:
[N. Mori, H. Minari, S. Uno, H. Mizuta, and N. Koshida]
通讯作者:
and N. Koshida
Properties of quantum-sized nanosilicon as a functional photonic material(Invited)
量子尺寸纳米硅作为功能光子材料的特性(特邀)
DOI:
--
发表时间:
2010
期刊:
影响因子:
--
作者:
[N. Koshida, B. Gelloz, R. Mentek, H. Yoshimura, and Y. Hirano]
通讯作者:
and Y. Hirano
FUNCTIONAL PROPERTIES OF NANOSILICON BALLISTIC ELECT RON EMITTER IN VACUUM, ATMOSPHERIC-PRESSURE GASES, AND SOLUTIONS
纳米硅弹道电子发射器在真空、常压气体和溶液中的功能特性
DOI:
--
发表时间:
2010
期刊:
影响因子:
--
作者:
[M.Hamada, M.Toyofuku, T.Miyano, T.Nakafjima-Kambe, H.Uchiyama, N.Nomura., 豊福雅典, Masanori Toyofuku, Masanori Toyofuku, A.Kojima, T. Ohta, 關義親, D. Sakai, M. Ghulinyan, 關義親, B. Gelloz, B. Gelloz, 太田敢行, T.Ohta]
通讯作者:
T.Ohta
共 97 条
Clarifying the Photonic, Electronic, and Acoustic Characteristics of Quantum-sized Silicon for Functional Integration
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批准号:18206039
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项目类别:Grant-in-Aid for Scientific Research (A)
-
资助金额:$31.28万
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财政年份:2006
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负责人:KOSHIDA Nobuyoshi
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依托单位:
Control of physical properties induced in silicon nanostructure and device applications
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批准号:18063007
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项目类别:Grant-in-Aid for Scientific Research on Priority Areas
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资助金额:$26.62万
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财政年份:2006
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负责人:KOSHIDA Nobuyoshi
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依托单位:
Ballistic Electron Effect in Nanocrystalline Silicon and its Device Applications
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批准号:15201031
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$28.62万
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财政年份:2003
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负责人:KOSHIDA Nobuyoshi
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依托单位:
Development of Silicon-Based Surface-Emitting Ballistic Electron Source and Its Application to Flat Panel Display
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批准号:13355016
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$26.71万
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财政年份:2001
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负责人:KOSHIDA Nobuyoshi
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依托单位:
A Study on Haptic Interfaces
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批准号:11450160
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$7.68万
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财政年份:1999
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负责人:KOSHIDA Nobuyoshi
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依托单位:
Development and Photonic Integration of Efficient and Stable Silicon-Based LED
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批准号:10355015
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$15.68万
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财政年份:1998
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负责人:KOSHIDA Nobuyoshi
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依托单位:
Development of Light-Emitting Devices Based on Poly-crystalline Silicon Films and Application to Large-Area Display
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批准号:08555083
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$11.33万
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财政年份:1996
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负责人:KOSHIDA Nobuyoshi
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依托单位:
Study of Visible Luminescence Mechanism in Porous Silicon and Its Devvelopment into Silicon-Based Optoelectronic Integration
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批准号:07405016
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$21.82万
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财政年份:1995
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负责人:KOSHIDA Nobuyoshi
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依托单位:
Ultafine Lithography by Oxide Ion Resists and Its Applications.
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批准号:01550304
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项目类别:Grant-in-Aid for General Scientific Research (C)
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资助金额:$1.15万
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财政年份:1989
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负责人:KOSHIDA Nobuyoshi
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依托单位:
海外基金