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Applications of nanosiicon ballistic emitter in liquids, gases, and solids

Applications of nanosiicon ballistic emitter in liquids, gases, and solids
纳米硅弹道发射器在液体、气体和固体中的应用
批准号:
21241037
负责人:
KOSHIDA Nobuyoshi
金额:
$13.4万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (A)
财政年份:
2009
资助国家:
日本
项目状态:
已结题
起止时间:
2009 至 2011

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中文摘要
翻译
阐明了纳米硅弹道电子发射器在液体、气体和固体中的特性函数及其可能的应用。(1)液体操作:向溶液中注入高还原性电子,可诱导半导体(硅、锗)和金属的薄膜沉积。(2)气体操作:证实Xe分子的内部电子激发发出真空紫外光而不放电。(3)固体运行:通过对弹道效应的理论分析,明确了在纳米硅二极管中观测到的雪崩光导的基本物理性质。
英文摘要
The characteristic functions and their possible applications of nanosilicon ballistic electron emitter were clarified in liquids, gases, and solids.(1) Operation in liquids : Injection of highly reducing electrons into solutions induces thin film deposition of semiconductors(silicon and germanium) and metals.(2) Operation in gases : It was confirmed that internal electronic excitation of Xe molecules emits vacuum-ultraviolet light without discharging.(3) Operation in solids : The underlying physics of avalanche photoconduction observed in nanosilicon diode was made clear by theoretical analyses of ballistic effect.
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Photonic, Electronic, and Acoustic Applications of Nanosilicon
纳米硅的光子、电子和声学应用
DOI: --
发表时间: 2011
期刊:
影响因子: --
作者: [N.Koshida, T.Ohta, Y.Hirano, R.Mentek, B.Gelloz]
通讯作者: B.Gelloz
Photonic, electronic, and acoustic applications of nanosilicon (Invited).
纳米硅的光子、电子和声学应用(特邀)。
DOI: --
发表时间: 2010
期刊:
影响因子: --
作者: [N.Koshida, T.Ohta, R.Mentek, Y.Hirano, B.Gelloz]
通讯作者: B.Gelloz
Strain effects on avalanche multiplication in a silicon nanodot array
硅纳米点阵列中雪崩倍增的应变效应
DOI: --
发表时间: 2011
期刊:
影响因子: --
作者: [N. Mori, H. Minari, S. Uno, H. Mizuta, and N. Koshida]
通讯作者: and N. Koshida
Properties of quantum-sized nanosilicon as a functional photonic material(Invited)
量子尺寸纳米硅作为功能光子材料的特性(特邀)
DOI: --
发表时间: 2010
期刊:
影响因子: --
作者: [N. Koshida, B. Gelloz, R. Mentek, H. Yoshimura, and Y. Hirano]
通讯作者: and Y. Hirano
97
    Clarifying the Photonic, Electronic, and Acoustic Characteristics of Quantum-sized Silicon for Functional Integration
    Control of physical properties induced in silicon nanostructure and device applications
    • 批准号:
      18063007
    • 项目类别:
      Grant-in-Aid for Scientific Research on Priority Areas
    • 资助金额:
      $26.62万
    • 财政年份:
      2006
    • 负责人:
      KOSHIDA Nobuyoshi
    • 依托单位:
    Ballistic Electron Effect in Nanocrystalline Silicon and its Device Applications
    Development of Silicon-Based Surface-Emitting Ballistic Electron Source and Its Application to Flat Panel Display
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