Applications of nanosiicon ballistic emitter in liquids, gases, and solids
Applications of nanosiicon ballistic emitter in liquids, gases, and solids
批准号:
21241037
负责人:
KOSHIDA Nobuyoshi
金额:
$13.4万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (A)
财政年份:
2009
资助国家:
日本
项目状态:
已结题
起止时间:
2009 至 2011
中文摘要
阐明了纳米硅弹道电子发射体在液体、气体和固体中的特征函数及其可能的应用。(1)在液体中操作:向溶液中注入高还原电子诱导半导体(硅和锗)和金属的薄膜沉积。(2)在气体中操作:证实了Xe分子的内部电子激发在不放电的情况下发出真空紫外光。(3)在固体中操作:通过对弹道效应的理论分析,阐明了纳米硅二极管中观察到的雪崩光导的潜在物理机制。
英文摘要
The characteristic functions and their possible applications of nanosilicon ballistic electron emitter were clarified in liquids, gases, and solids.(1) Operation in liquids : Injection of highly reducing electrons into solutions induces thin film deposition of semiconductors(silicon and germanium) and metals.(2) Operation in gases : It was confirmed that internal electronic excitation of Xe molecules emits vacuum-ultraviolet light without discharging.(3) Operation in solids : The underlying physics of avalanche photoconduction observed in nanosilicon diode was made clear by theoretical analyses of ballistic effect.
期刊论文(144)
专著(0)
科研奖励(0)
会议论文
登录
查看更多内容
DOI:
--
发表时间:
2011
期刊:
影响因子:
--
作者:
[N.Koshida, T.Ohta, Y.Hirano, R.Mentek, B.Gelloz]
通讯作者:
B.Gelloz
Photonic, electronic, and acoustic applications of nanosilicon (Invited).
纳米硅的光子、电子和声学应用(特邀)。
DOI:
--
发表时间:
2010
期刊:
影响因子:
--
作者:
[N.Koshida, T.Ohta, R.Mentek, Y.Hirano, B.Gelloz]
通讯作者:
B.Gelloz
FUNCTIONAL PROPERTIES OF NANOSILICON BALLISTIC ELECT RON EMITTER IN VACUUM, ATMOSPHERIC-PRESSURE GASES, AND SOLUTIONS
纳米硅弹道电子发射器在真空、常压气体和溶液中的功能特性
DOI:
--
发表时间:
2010
期刊:
影响因子:
--
作者:
[M.Hamada, M.Toyofuku, T.Miyano, T.Nakafjima-Kambe, H.Uchiyama, N.Nomura., 豊福雅典, Masanori Toyofuku, Masanori Toyofuku, A.Kojima, T. Ohta, 關義親, D. Sakai, M. Ghulinyan, 關義親, B. Gelloz, B. Gelloz, 太田敢行, T.Ohta]
通讯作者:
T.Ohta
Counter-electrode-free thin Cu film deposition based on ballistic electron injection into CuSO_4 solution from nanosilicon emitter
基于纳米硅发射极弹道电子注入 CuSO_4 溶液的无反电极薄膜沉积
DOI:
10.1143/jjap.50.010104
发表时间:
2011
期刊:
Jpn. J. Appl. Phys
影响因子:
--
作者:
[T. Ohta, B. Gelloz, and N. Koshida]
通讯作者:
and N. Koshida
Electropolymerization of poly vinylene films onto and inside porous Si layers of different types and morphologies
不同类型和形态的多孔硅层上和内部的聚乙烯薄膜电聚合
DOI:
10.1149/1.3497359
发表时间:
2010
期刊:
J. Electrochem. Soc
影响因子:
--
作者:
[B. Gelloz, M. Mentek, T. Djenizian, F. Dumur, L. Jin, and N. Koshida]
通讯作者:
and N. Koshida
共 97 条
Clarifying the Photonic, Electronic, and Acoustic Characteristics of Quantum-sized Silicon for Functional Integration
-
批准号:18206039
-
项目类别:Grant-in-Aid for Scientific Research (A)
-
资助金额:$31.28万
-
财政年份:2006
-
负责人:KOSHIDA Nobuyoshi
-
依托单位:
Control of physical properties induced in silicon nanostructure and device applications
-
批准号:18063007
-
项目类别:Grant-in-Aid for Scientific Research on Priority Areas
-
资助金额:$26.62万
-
财政年份:2006
-
负责人:KOSHIDA Nobuyoshi
-
依托单位:
Ballistic Electron Effect in Nanocrystalline Silicon and its Device Applications
-
批准号:15201031
-
项目类别:Grant-in-Aid for Scientific Research (A)
-
资助金额:$28.62万
-
财政年份:2003
-
负责人:KOSHIDA Nobuyoshi
-
依托单位:
Development of Silicon-Based Surface-Emitting Ballistic Electron Source and Its Application to Flat Panel Display
-
批准号:13355016
-
项目类别:Grant-in-Aid for Scientific Research (A)
-
资助金额:$26.71万
-
财政年份:2001
-
负责人:KOSHIDA Nobuyoshi
-
依托单位:
A Study on Haptic Interfaces
-
批准号:11450160
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$7.68万
-
财政年份:1999
-
负责人:KOSHIDA Nobuyoshi
-
依托单位:
Development and Photonic Integration of Efficient and Stable Silicon-Based LED
-
批准号:10355015
-
项目类别:Grant-in-Aid for Scientific Research (A)
-
资助金额:$15.68万
-
财政年份:1998
-
负责人:KOSHIDA Nobuyoshi
-
依托单位:
Development of Light-Emitting Devices Based on Poly-crystalline Silicon Films and Application to Large-Area Display
-
批准号:08555083
-
项目类别:Grant-in-Aid for Scientific Research (A)
-
资助金额:$11.33万
-
财政年份:1996
-
负责人:KOSHIDA Nobuyoshi
-
依托单位:
Study of Visible Luminescence Mechanism in Porous Silicon and Its Devvelopment into Silicon-Based Optoelectronic Integration
-
批准号:07405016
-
项目类别:Grant-in-Aid for Scientific Research (A)
-
资助金额:$21.82万
-
财政年份:1995
-
负责人:KOSHIDA Nobuyoshi
-
依托单位:
Ultafine Lithography by Oxide Ion Resists and Its Applications.
-
批准号:01550304
-
项目类别:Grant-in-Aid for General Scientific Research (C)
-
资助金额:$1.15万
-
财政年份:1989
-
负责人:KOSHIDA Nobuyoshi
-
依托单位:
海外基金