Development and Photonic Integration of Efficient and Stable Silicon-Based LED

高效稳定硅基LED的开发与光子集成

基本信息

项目摘要

To develop efficient and stable silicon-based LED and make the technological foundation of monolithic photonic integration more solid, experimental studies have been conducted in terms of fabrication technique, surface passivation, and related optoelectronic characterization. The major results and their significances are summarized as follows.1. Drastic improvement in the efficiency of Si-based LEDsBy introducing a post-anodization electrochemical treatment, the leakage component in the porous silicon diode current is successfully reduced, and carrier injection into luminescent nanocrystalline silicon becomes very efficient. As a result, the external quantum efficiency is enhanced to beyond 1%. Also, an external power efficiency of 0.4% close to a practical level can be obtained from a diode with an appropriate device configuration. These are the highest values to date in this field. Some key issues for stabilization of LED operation and for tuning the emission band have also been clarified. Especially important result is that blue emission has been observed with oxide-free samples.2. Findings of novel functions of silicon nanocrystalsFrom some electrical and optical investigations, it has been shown that luminescent nanocrystalline silicon exhibits various useful functions : light-emissive nonvolatile memory, ballistic electron emission, and thermally induced ultrasonic emission. Nanocrystalline silicon is very useful as a multi-functional material.3. Toward photonic integrationThe compatibility of nanocrystalline silicon with three-dimensional buried optical waveguide was examined. It has been demonstrated that a buried bent waveguide with an extremely small curvature can be fabricated by simple palanar processing. Nonlinear optical effects due to refractive index change were also observed.
为了开发高效稳定的硅基发光二极管,为单片光子集成奠定坚实的技术基础,本文从制作工艺、表面钝化及相关光电特性等方面进行了实验研究。主要研究结果及其意义如下:1.硅基LED效率的大幅提高通过引入阳极化后的电化学处理,多孔硅二极管电流中的泄漏分量成功降低,并且载流子注入到发光纳米晶硅中变得非常有效。结果,外量子效率提高到1%以上。此外,外部功率效率为0.4%,接近实际水平,可以从二极管与适当的设备配置。这是该领域迄今为止的最高值。还澄清了LED操作的稳定性和调谐发射带的一些关键问题。特别重要的结果是,在不含氧化物的样品中观察到了蓝光发射.硅纳米晶新功能的发现从一些电学和光学研究中,已经表明发光纳米晶硅具有各种有用的功能:光发射非易失性存储器,弹道电子发射和热致超声发射。纳米硅是一种非常有用的多功能材料.研究了纳米晶硅与三维埋层光波导的兼容性。已经证明,具有极小曲率的掩埋弯曲波导可以通过简单的palanar加工来制造。还观察到由于折射率变化引起的非线性光学效应。

项目成果

期刊论文数量(26)
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T.Komoda,X.Sheng,and N.Koshida: "Mechanism of efficient and stable surface-emitting cold cathode based on porous poly-crystalline silicon films"J.Vac.Sci.Technol.B. 17. 1076-1079 (1999)
T.Komoda、X.Sheng、N.Koshida:“基于多孔多晶硅薄膜的高效稳定面发射冷阴极机理”J.Vac.Sci.Technol.B。
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X. Sheng, A. Kojima, T. Komoda, and N. Koshida: "Efficient and ballistic cold electron emission from porous poly-crystalline silicon diodes with a porosity multilayer structure"J. Vac. Sci. Tecnol. B. 18(in press). (2000)
X. Shen、A. Kojima、T. Komoda 和 N. Koshida:“具有多孔多层结构的多孔多晶硅二极管的高效弹道冷电子发射”J。
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B.Gelloz,T.Nakagawa,and N.Koshida: "Enhancing the external quantum efficiency of porous silicon LEDs beyond 1% by a post-anodization electrochemical oxidation" Mat.Res.Soc.Symp.Proc.536(in press). (1999)
B.Gelloz、T.Nakakawa 和%20N.Koshida:%20"增强%20the%20external%20quantum%20efficiency%20of%20porous%20silicon%20LEDs%20beyond%201%%20by%20a%20post-anodization%20电化学%
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T. Matsumoto, H. Mimura, N. Koshida, and Y. Masumoto: "The density of states in silicon nanostructures determined by space-charge-limited current measurements"J. Appl. Phys.. 84. 6157-6161 (1998)
T. Matsumoto、H. Mimura、N. Koshida 和 Y. Masumoto:“通过空间电荷限制电流测量确定硅纳米结构中的态密度”J。
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B.Gelloz,T.Nakagawa,and N.Koshida: "Enhancement of the quantum efficiency and stability of electroluminescence from porous silicon by anodic passivation." Appl.Phys.Lett.73. 2021-2023 (1998)
B.Gelloz、T.Nakakawa 和 N.Koshida:“通过阳极钝化提高多孔硅电致发光的量子效率和稳定性。”
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KOSHIDA Nobuyoshi其他文献

KOSHIDA Nobuyoshi的其他文献

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{{ truncateString('KOSHIDA Nobuyoshi', 18)}}的其他基金

Applications of nanosiicon ballistic emitter in liquids, gases, and solids
纳米硅弹道发射器在液体、气体和固体中的应用
  • 批准号:
    21241037
  • 财政年份:
    2009
  • 资助金额:
    $ 15.68万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Clarifying the Photonic, Electronic, and Acoustic Characteristics of Quantum-sized Silicon for Functional Integration
阐明用于功能集成的量子尺寸硅的光子、电子和声学特性
  • 批准号:
    18206039
  • 财政年份:
    2006
  • 资助金额:
    $ 15.68万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Control of physical properties induced in silicon nanostructure and device applications
控制硅纳米结构和器件应用中引起的物理特性
  • 批准号:
    18063007
  • 财政年份:
    2006
  • 资助金额:
    $ 15.68万
  • 项目类别:
    Grant-in-Aid for Scientific Research on Priority Areas
Ballistic Electron Effect in Nanocrystalline Silicon and its Device Applications
纳米晶硅中的弹道电子效应及其器件应用
  • 批准号:
    15201031
  • 财政年份:
    2003
  • 资助金额:
    $ 15.68万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Development of Silicon-Based Surface-Emitting Ballistic Electron Source and Its Application to Flat Panel Display
硅基面发射弹道电子源的研制及其在平板显示中的应用
  • 批准号:
    13355016
  • 财政年份:
    2001
  • 资助金额:
    $ 15.68万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
A Study on Haptic Interfaces
触觉界面研究
  • 批准号:
    11450160
  • 财政年份:
    1999
  • 资助金额:
    $ 15.68万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Development of Light-Emitting Devices Based on Poly-crystalline Silicon Films and Application to Large-Area Display
基于多晶硅薄膜的发光器件的研制及其在大面积显示中的应用
  • 批准号:
    08555083
  • 财政年份:
    1996
  • 资助金额:
    $ 15.68万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Study of Visible Luminescence Mechanism in Porous Silicon and Its Devvelopment into Silicon-Based Optoelectronic Integration
多孔硅可见光发光机理研究及其硅基光电集成开发
  • 批准号:
    07405016
  • 财政年份:
    1995
  • 资助金额:
    $ 15.68万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Ultafine Lithography by Oxide Ion Resists and Its Applications.
氧化物离子抗蚀剂超精细光刻及其应用。
  • 批准号:
    01550304
  • 财政年份:
    1989
  • 资助金额:
    $ 15.68万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (C)

相似海外基金

Giant Exchange Reaction from Hydrogen to Deuterium on a Nanocrystalline Silicon Surface
纳米晶硅表面从氢到氘的巨大交换反应
  • 批准号:
    20H04455
  • 财政年份:
    2020
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纳米晶硅的流体介导组装
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Fundamental Studies of Nanocrystalline Silicon Hybrids
纳米晶硅杂化物的基础研究
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    1411435
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    2015
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Nanocrystalline Silicon Films Prepared by Supersonic Free-Jet PVD
超音速自由喷射PVD制备纳米晶硅薄膜
  • 批准号:
    24560891
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    2012
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    Grant-in-Aid for Scientific Research (C)
EAGER: Engineering Defect Structure in Nanocrystalline Silicon: A Fundamental Study Using Scanning Probe Microscopy
EAGER:纳米晶硅中的工程缺陷结构:使用扫描探针显微镜的基础研究
  • 批准号:
    1063263
  • 财政年份:
    2010
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Improved characterization methods for functionalized freestanding nanocrystalline silicon
改进的功能化独立纳米晶硅表征方法
  • 批准号:
    346515-2008
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    2008
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    $ 15.68万
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    Postgraduate Scholarships - Master's
Study on nanocrystalline silicon planar cathodes with low emission divergence and narrow electron energy spread
低发射发散窄电子能展纳米晶硅平面阴极研究
  • 批准号:
    20560333
  • 财政年份:
    2008
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Improved characterization methods for functionalized freestanding nanocrystalline silicon
改进的功能化独立纳米晶硅表征方法
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Study on enhancement in emission current of plane-type cathodes based on nanocrystalline silicon
纳米晶硅平面型阴极发射电流增强研究
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    18560342
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    2006
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GOALI: Novel Nanocrystalline Silicon Solar Cells on Plastic Substrates
目标:塑料基板上的新型纳米晶硅太阳能电池
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    0501251
  • 财政年份:
    2005
  • 资助金额:
    $ 15.68万
  • 项目类别:
    Continuing Grant
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