Development and Photonic Integration of Efficient and Stable Silicon-Based LED

高效稳定硅基LED的开发与光子集成

基本信息

项目摘要

To develop efficient and stable silicon-based LED and make the technological foundation of monolithic photonic integration more solid, experimental studies have been conducted in terms of fabrication technique, surface passivation, and related optoelectronic characterization. The major results and their significances are summarized as follows.1. Drastic improvement in the efficiency of Si-based LEDsBy introducing a post-anodization electrochemical treatment, the leakage component in the porous silicon diode current is successfully reduced, and carrier injection into luminescent nanocrystalline silicon becomes very efficient. As a result, the external quantum efficiency is enhanced to beyond 1%. Also, an external power efficiency of 0.4% close to a practical level can be obtained from a diode with an appropriate device configuration. These are the highest values to date in this field. Some key issues for stabilization of LED operation and for tuning the emission band have also been clarified. Especially important result is that blue emission has been observed with oxide-free samples.2. Findings of novel functions of silicon nanocrystalsFrom some electrical and optical investigations, it has been shown that luminescent nanocrystalline silicon exhibits various useful functions : light-emissive nonvolatile memory, ballistic electron emission, and thermally induced ultrasonic emission. Nanocrystalline silicon is very useful as a multi-functional material.3. Toward photonic integrationThe compatibility of nanocrystalline silicon with three-dimensional buried optical waveguide was examined. It has been demonstrated that a buried bent waveguide with an extremely small curvature can be fabricated by simple palanar processing. Nonlinear optical effects due to refractive index change were also observed.
为了开发高效、稳定的硅基LED,使单片光子集成的技术基础更加坚实,从制造工艺、表面钝化以及相关光电表征等方面进行了实验研究。主要研究结果及意义如下: 1.硅基LED效率的大幅提高通过引入阳极氧化后电化学处理,成功减少了多孔硅二极管电流中的泄漏分量,并且载流子注入发光纳米晶硅变得非常有效。结果,外量子效率提高到1%以上。此外,通过具有适当器件配置的二极管可以获得接近实用水平的0.4%的外部功率效率。这些是该领域迄今为止的最高值。 LED 工作稳定性和发射波段调整的一些关键问题也已得到澄清。特别重要的结果是,在不含氧化物的样品中观察到蓝色发射。2.硅纳米晶体新功能的发现一些电学和光学研究表明,发光纳米晶体硅表现出各种有用的功能:发光非易失性存储器、弹道电子发射和热致超声波发射。纳米晶硅作为一种非常有用的多功能材料。 3.面向光子集成研究了纳米晶硅与三维埋入式光波导的兼容性。已经证明,可以通过简单的平面加工来制造具有极小曲率的埋地弯曲波导。还观察到由于折射率变化引起的非线性光学效应。

项目成果

期刊论文数量(26)
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T.Komoda,X.Sheng,and N.Koshida: "Mechanism of efficient and stable surface-emitting cold cathode based on porous poly-crystalline silicon films"J.Vac.Sci.Technol.B. 17. 1076-1079 (1999)
T.Komoda、X.Sheng、N.Koshida:“基于多孔多晶硅薄膜的高效稳定面发射冷阴极机理”J.Vac.Sci.Technol.B。
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X. Sheng, A. Kojima, T. Komoda, and N. Koshida: "Efficient and ballistic cold electron emission from porous poly-crystalline silicon diodes with a porosity multilayer structure"J. Vac. Sci. Tecnol. B. 18(in press). (2000)
X. Shen、A. Kojima、T. Komoda 和 N. Koshida:“具有多孔多层结构的多孔多晶硅二极管的高效弹道冷电子发射”J。
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B.Gelloz,T.Nakagawa,and N.Koshida: "Enhancing the external quantum efficiency of porous silicon LEDs beyond 1% by a post-anodization electrochemical oxidation" Mat.Res.Soc.Symp.Proc.536(in press). (1999)
B.Gelloz、T.Nakakawa 和%20N.Koshida:%20"增强%20the%20external%20quantum%20efficiency%20of%20porous%20silicon%20LEDs%20beyond%201%%20by%20a%20post-anodization%20电化学%
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T. Matsumoto, H. Mimura, N. Koshida, and Y. Masumoto: "The density of states in silicon nanostructures determined by space-charge-limited current measurements"J. Appl. Phys.. 84. 6157-6161 (1998)
T. Matsumoto、H. Mimura、N. Koshida 和 Y. Masumoto:“通过空间电荷限制电流测量确定硅纳米结构中的态密度”J。
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B.Gelloz,T.Nakagawa,and N.Koshida: "Enhancement of the quantum efficiency and stability of electroluminescence from porous silicon by anodic passivation." Appl.Phys.Lett.73. 2021-2023 (1998)
B.Gelloz、T.Nakakawa 和 N.Koshida:“通过阳极钝化提高多孔硅电致发光的量子效率和稳定性。”
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KOSHIDA Nobuyoshi其他文献

KOSHIDA Nobuyoshi的其他文献

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{{ truncateString('KOSHIDA Nobuyoshi', 18)}}的其他基金

Applications of nanosiicon ballistic emitter in liquids, gases, and solids
纳米硅弹道发射器在液体、气体和固体中的应用
  • 批准号:
    21241037
  • 财政年份:
    2009
  • 资助金额:
    $ 15.68万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Clarifying the Photonic, Electronic, and Acoustic Characteristics of Quantum-sized Silicon for Functional Integration
阐明用于功能集成的量子尺寸硅的光子、电子和声学特性
  • 批准号:
    18206039
  • 财政年份:
    2006
  • 资助金额:
    $ 15.68万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Control of physical properties induced in silicon nanostructure and device applications
控制硅纳米结构和器件应用中引起的物理特性
  • 批准号:
    18063007
  • 财政年份:
    2006
  • 资助金额:
    $ 15.68万
  • 项目类别:
    Grant-in-Aid for Scientific Research on Priority Areas
Ballistic Electron Effect in Nanocrystalline Silicon and its Device Applications
纳米晶硅中的弹道电子效应及其器件应用
  • 批准号:
    15201031
  • 财政年份:
    2003
  • 资助金额:
    $ 15.68万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Development of Silicon-Based Surface-Emitting Ballistic Electron Source and Its Application to Flat Panel Display
硅基面发射弹道电子源的研制及其在平板显示中的应用
  • 批准号:
    13355016
  • 财政年份:
    2001
  • 资助金额:
    $ 15.68万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
A Study on Haptic Interfaces
触觉界面研究
  • 批准号:
    11450160
  • 财政年份:
    1999
  • 资助金额:
    $ 15.68万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Development of Light-Emitting Devices Based on Poly-crystalline Silicon Films and Application to Large-Area Display
基于多晶硅薄膜的发光器件的研制及其在大面积显示中的应用
  • 批准号:
    08555083
  • 财政年份:
    1996
  • 资助金额:
    $ 15.68万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Study of Visible Luminescence Mechanism in Porous Silicon and Its Devvelopment into Silicon-Based Optoelectronic Integration
多孔硅可见光发光机理研究及其硅基光电集成开发
  • 批准号:
    07405016
  • 财政年份:
    1995
  • 资助金额:
    $ 15.68万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Ultafine Lithography by Oxide Ion Resists and Its Applications.
氧化物离子抗蚀剂超精细光刻及其应用。
  • 批准号:
    01550304
  • 财政年份:
    1989
  • 资助金额:
    $ 15.68万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (C)

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Giant Exchange Reaction from Hydrogen to Deuterium on a Nanocrystalline Silicon Surface
纳米晶硅表面从氢到氘的巨大交换反应
  • 批准号:
    20H04455
  • 财政年份:
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纳米晶硅的流体介导组装
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Fundamental Studies of Nanocrystalline Silicon Hybrids
纳米晶硅杂化物的基础研究
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    1411435
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Nanocrystalline Silicon Films Prepared by Supersonic Free-Jet PVD
超音速自由喷射PVD制备纳米晶硅薄膜
  • 批准号:
    24560891
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    2012
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EAGER: Engineering Defect Structure in Nanocrystalline Silicon: A Fundamental Study Using Scanning Probe Microscopy
EAGER:纳米晶硅中的工程缺陷结构:使用扫描探针显微镜的基础研究
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    1063263
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    2010
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Improved characterization methods for functionalized freestanding nanocrystalline silicon
改进的功能化独立纳米晶硅表征方法
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    346515-2008
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    2008
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    $ 15.68万
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    Postgraduate Scholarships - Master's
Study on nanocrystalline silicon planar cathodes with low emission divergence and narrow electron energy spread
低发射发散窄电子能展纳米晶硅平面阴极研究
  • 批准号:
    20560333
  • 财政年份:
    2008
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改进的功能化独立纳米晶硅表征方法
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Study on enhancement in emission current of plane-type cathodes based on nanocrystalline silicon
纳米晶硅平面型阴极发射电流增强研究
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    18560342
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    2006
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GOALI: Novel Nanocrystalline Silicon Solar Cells on Plastic Substrates
目标:塑料基板上的新型纳米晶硅太阳能电池
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    0501251
  • 财政年份:
    2005
  • 资助金额:
    $ 15.68万
  • 项目类别:
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