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Ballistic Electron Effect in Nanocrystalline Silicon and its Device Applications

纳米晶硅中的弹道电子效应及其器件应用

基本信息

批准号：
15201031
负责人：
KOSHIDA Nobuyoshi
金额：
$ 28.62万
依托单位：
Tokyo University of Agriculture and Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
2003
资助国家：
日本
起止时间：
2003 至 2004
项目状态：
已结题

项目摘要

The generation mechanism of ballistic electrons in nanocrystalline silicon(nc-Si) diodes has been studied in terms of electron transport and emission. Some technological aspects for applications to flat panel display and ballistic lighting have also been investigated including possible combination with related thermo-acoustic functions. The results and significances are summarized as follows.(1)Analysis of ballistic transport-It was confirmed from measurements of the electron emission characteristics in either low-vacuum or atmospheric pressure that ballistic electrons are efficiently generated in the nc-Si layer, and that there is a definite correlation between the silicon nanostructure and the ballistic emission efficiency.-From experimental analyses of the field and temperature dependencies of time-of-flight signals for the nc-Si layer using a picoseconds-width UV laser pulse, the ballistic transport mode was detected with a significantly enlarged drift velocity and mean free path.- … More Theoretical transport analyses suggest that electron-phonon scattering in nc-Si dot chains interconnected with tunnel oxides could be significantly suppressed due to a reduction in the effective deformation potential.(2)Application studies-Both the ballistic emission efficiency and the operation stability have been drastically improved by employing an appropriate annealing to reduce scattering losses at nc-Si interfaces.-Based on practical advantages of the nc-Si emitter, a simple-matrix-drive 7.6'' full-color flat panel display has been developed using a polycrystalline silicon film deposited onto a glass substrate. In addition, it has been demonstrated that solid-state ballistic lighting device can be fabricated.(3)Combination with related functions-The visible luminescence and thermally induced ultrasonic emission properties of nc-Si devices were significantly improved in view of technological applications.-Basic process technology was examined towards monolithic functional integration of ballistic effect, luminescence, and ultrasonic emission. Less

从电子输运和发射的角度研究了纳米硅二极管中弹道电子的产生机理。还研究了平板显示器和弹道照明应用的一些技术方面，包括与相关热声功能的可能组合。研究结果及意义如下。（1）弹道传输的分析-从在低真空或大气压下的电子发射特性的测量中证实，在nc-Si层中有效地产生弹道电子，并且在硅纳米结构和弹道发射效率之间存在确定的相关性。从使用皮秒宽度UV激光脉冲的nc-Si层的飞行时间信号的场和温度依赖性的实验分析，检测到具有显著增大的漂移速度和平均自由程的弹道输运模式。 ...更多信息理论输运分析表明，电子-声子散射nc-Si点链与隧道氧化物互连可以显着抑制由于有效变形势的减少。（2）应用研究-通过采用适当的退火以减少nc-Si界面处的散射损失，弹道发射效率和操作稳定性都得到了显著改善。基于nc-Si发射极的实用优点，我们研制了一种简单矩阵驱动的7.6“全彩色平板显示器。此外，已经证明可以制造固态弹道照明器件。（3）与相关功能的结合--从技术应用的角度来看，nc-Si器件的可见光发光和热致超声发射性能得到了显著提高。基本工艺技术进行了检查，对弹道效应，发光和超声波发射单片功能集成。少