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Ballistic Electron Effect in Nanocrystalline Silicon and its Device Applications

Ballistic Electron Effect in Nanocrystalline Silicon and its Device Applications
纳米晶硅中的弹道电子效应及其器件应用
批准号:
15201031
负责人:
KOSHIDA Nobuyoshi
金额:
$28.62万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (A)
财政年份:
2003
资助国家:
日本
项目状态:
已结题
起止时间:
2003 至 2004

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英文摘要
The generation mechanism of ballistic electrons in nanocrystalline silicon(nc-Si) diodes has been studied in terms of electron transport and emission. Some technological aspects for applications to flat panel display and ballistic lighting have also been investigated including possible combination with related thermo-acoustic functions. The results and significances are summarized as follows.(1)Analysis of ballistic transport-It was confirmed from measurements of the electron emission characteristics in either low-vacuum or atmospheric pressure that ballistic electrons are efficiently generated in the nc-Si layer, and that there is a definite correlation between the silicon nanostructure and the ballistic emission efficiency.-From experimental analyses of the field and temperature dependencies of time-of-flight signals for the nc-Si layer using a picoseconds-width UV laser pulse, the ballistic transport mode was detected with a significantly enlarged drift velocity and mean free path.- … More Theoretical transport analyses suggest that electron-phonon scattering in nc-Si dot chains interconnected with tunnel oxides could be significantly suppressed due to a reduction in the effective deformation potential.(2)Application studies-Both the ballistic emission efficiency and the operation stability have been drastically improved by employing an appropriate annealing to reduce scattering losses at nc-Si interfaces.-Based on practical advantages of the nc-Si emitter, a simple-matrix-drive 7.6'' full-color flat panel display has been developed using a polycrystalline silicon film deposited onto a glass substrate. In addition, it has been demonstrated that solid-state ballistic lighting device can be fabricated.(3)Combination with related functions-The visible luminescence and thermally induced ultrasonic emission properties of nc-Si devices were significantly improved in view of technological applications.-Basic process technology was examined towards monolithic functional integration of ballistic effect, luminescence, and ultrasonic emission. Less
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B.Gelloz, H.Sano, R.Boukherroub, D.D.M.Wayner, D.J.Lockwood, N.Koshida: "Stabilization of porous silicon electroluminescence by surface passivation with controlled covalent bonds"Appl.Phys.Lett.. 83. 2342-2344 (2003)
B.Gelloz、H.Sano、R.Boukherroub、D.D.M.Wayner、D.J.Lockwood、N.Koshida:“通过受控共价键的表面钝化来稳定多孔硅电致发光”Appl.Phys.Lett.. 83. 2342-2344 (2003
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A.Kojima, N.Koshida: "An analysis of electron transport in surface-passivated nanocrystalline porous silicon"Jpn.J.Appl.Phys.. 42. 2395-2398 (2003)
A.Kojima、N.Koshida:“表面钝化纳米晶多孔硅中电子传输的分析”Jpn.J.Appl.Phys.. 42. 2395-2398 (2003)
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Quasiballistic Electron Emission from Planarized Nanocrystalline-Si Cold Cathode
平面化纳米晶硅冷阴极的准弹道电子发射
DOI: --
发表时间: 2005
期刊: Materials Research Society Symposium Proceedings 832
影响因子: --
作者: [Y.Tsuchiya, T.Nakatsukasa, H.Mizuta, S.Oda, A.Kojima, N.Koshida]
通讯作者: N.Koshida
Precise thermal characterization of confined nanocrystalline silicon by a 3ω method.
通过 3ω 方法对受限纳米晶硅进行精确热表征。
DOI: --
发表时间: 2005
期刊: Jpn.J.Appl.Phys. 44(In press)
影响因子: --
作者: [T.Kihara, T.Harada, N.Koshida]
通讯作者: N.Koshida
28
    Applications of nanosiicon ballistic emitter in liquids, gases, and solids
    Clarifying the Photonic, Electronic, and Acoustic Characteristics of Quantum-sized Silicon for Functional Integration
    Control of physical properties induced in silicon nanostructure and device applications
    • 批准号:
      18063007
    • 项目类别:
      Grant-in-Aid for Scientific Research on Priority Areas
    • 资助金额:
      $26.62万
    • 财政年份:
      2006
    • 负责人:
      KOSHIDA Nobuyoshi
    • 依托单位:
    Development of Silicon-Based Surface-Emitting Ballistic Electron Source and Its Application to Flat Panel Display