Study of Visible Luminescence Mechanism in Porous Silicon and Its Devvelopment into Silicon-Based Optoelectronic Integration

多孔硅可见光发光机理研究及其硅基光电集成开发

• 批准号: 07405016
• 负责人: KOSHIDA Nobuyoshi
• 金额: $ 21.82万
• 依托单位: Tokyo University of Agriculture and Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 1995
• 资助国家: 日本
• 起止时间: 1995 至 1997
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07405016/
• 关键词: porous Si; Si nanocrystallites; quantum confinement; visible luminescence; Si light-emiting diode; Si photonic integration; bistable memory; ballistic electron emission; コールドカソード; シリコン発光素子

To enhance the scientific and teachnological potential of silicon-based optoelectronics, the visible luminescence mechanism of porous silicon(PS)has been studied, including the device physics for monolithic photonic integrataion. Major results are summarized as fofllows.1. Related issues to luminescence mechanism(1) Bandgap widening occurs in luminescent PS,while its electronic and lattice structures maintain characteristic features of single-crystal silicon substrates.(2) Definite correlation exists between bandgap and PL peak energy.(3) Nanocrystal-related PL model is presented on a basis of spectroscopic analyzes of PL dynamics, polarization memory, and PL excitation process.(4) PL spestra can be continuously tuned from red to blue simply by post-anodization photochemical etching without any further treatments like thermal oxidation.(5) PL efficiency and stability can be improved by appropriate control of structure and surface termination of silicon nanocrystals in PS.2. Fundamentals of integrated photonic devices(1) By analyzes of electroluminescence (EL) mechanism in PS diodes, efficiency of 0.05% was obtained from diodes with a simple PS layr.(2) Applicability of PS to optical cavity and three-dimensionally buried waveguide was demonstrated based on monolithic fabricataion technology.(3) Availabilty of PS for optical logic gate was made clear by making use of non-linear optical effects.(4) Some useful functions of PS as a confined system were observed in relation to the EL emission. Especially of importances are bistable memory effects and ballistic electron emission.

为了提高硅基光电子学的科学和技术潜力，研究了多孔硅（PS）的可见光发光机理，包括单片光子集成器件物理。主要研究结果如下：1.发光机制的相关问题（1）发光PS中存在禁带展宽，但其电子和晶格结构保持了单晶硅衬底的特征。(2)带隙和PL峰能量之间存在一定的相关性。(3)在分析光致发光动力学、偏振记忆和光致发光激发过程的基础上，提出了与纳米材料相关的光致发光模型。(4)PL spestra可以通过阳极氧化后的光化学蚀刻连续地从红色调谐到蓝色，而无需任何进一步的处理，如热氧化。(5)适当控制PS中硅纳米晶的结构和表面终止可以提高PL效率和稳定性.（1）通过对PS发光二极管电致发光机理的分析，得到了具有简单PS层的发光二极管的发光效率为0.05%。(2)基于单片制作技术，论证了PS在光腔和三维埋层波导中的适用性。(3)利用非线性光学效应，阐明了光开关用于光学逻辑门的可行性。(4)PS作为一个受限系统的一些有用的功能，观察到的EL发射。特别重要的是电子束记忆效应和弹道电子发射。

项目成果

M.Araki, H.Koyama, and N.Koshida: "Fabrication and Fundamental Properties of an Edge-Emitting Device with Step-Index Porous Silicon Waveguide" Appl.Phys.Lett. 68. in press (1996)

M.Araki、H.Koyama 和 N.Koshida：“具有阶跃折射率多孔硅波导的边缘发射器件的制造和基本特性”Appl.Phys.Lett。

H.Mizuno, H.Koyama, and N.Koshida: "Photo-assisted continuous tuning of photoluminescence spectra of porous silicon," Thin Solid Films. 297. 61-63 (1997)

H.Mizuno、H.Koyama 和 N.Koshida：“多孔硅光致发光光谱的光辅助连续调谐”，薄固体薄膜。

T.Nakagawa, H.Koyama, and N.Koshida: "Effects of external magnetic field on the formation and optical properties of porous silicon," Proc.Int.ECS Symp.on Pits and Pores:Formation,Properties and Significance for Advanced Luminesecnt Materials,Ottawa,1997(E

T.Nakakawa、H.Koyama 和 N.Koshida：“外部磁场对多孔硅的形成和光学性质的影响”，Proc.Int.ECS Symp.on Pits and Pores：Formation,Properties and Significance for Advanced Luminesecnt

M.Araki, H.Koyama, and N.Koshida: "Controlled electroluminescence of porous silicon diodes with a vertical optical cafvity" Appl.Phys.Lett.52. 2956-2958 (1996)

M.Araki、H.Koyama 和 N.Koshida：“具有垂直光学腔的多孔硅二极管的受控电致发光”Appl.Phys.Lett.52。

H.Mizuno, H, Koyama, and N.Koshida: "Oxide-Free Blue Photoluminescence from Photochemicall Etched Porous Silicon" Appl.Phys.Lett.69. 3779-3781 (1996)

H.Mizuno、H、Koyama 和 N.Koshida：“光化学蚀刻多孔硅的无氧化物蓝色光致发光”Appl.Phys.Lett.69。