Development of Light-Emitting Devices Based on Poly-crystalline Silicon Films and Application to Large-Area Display

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To develop large-area light-emissive flat panel display devices, light-emitting porous silicon diodes have been fabricated using studied for poly-crystalline silicon (poly-Si) films. The characteristics of poly-Si devices as light-emitting diodes (LED) are clarified. The major results and their significances are summarized as follows.1. Process technology of poly-Si-based LEDsAppropriate dervice confifuration of poly-Si diodes as LEDs was determined by detailed investigations of the anodization conditions of poly-Si films, sstructuring of the active layr, formation of injection electrodes. On a basis of these studies, poly-Si LEDs with an efficiency comparable to that of conventional porous silicon diodes foramed on single-crystlline substrates were successfully obtained.2. Charaacteristics of poly-Si-based LEDsForm some electrical and optical measurements, it has been shown that the electroluminescence (EL) in porous poly-Si diodes is based on the same injection mechanism as in the case of single-crystalline substrates. Advantageous features of porous poly-Si diodes over the conventional porous silicon ones were made clear regarding the stability and uniformity of the EL emission.3. Fundamental aspects toward large-area display devicesThe compatibilty of poorous poly-Si LEDs with a poly-Si thin film transistor was examined using a planar-type poly-Si TFT fabricated on the glass substrate based on a laser annealing technique. As the gate voltage is increased under a constant drain voltage, the driving current was supplied into the LRDs, and then significant EL emission was observed through the top contact. This result indicates the posiibility of porous poy-Si as an active component for integrated LED arrays on glass substrates with a large-area.