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Development of Light-Emitting Devices Based on Poly-crystalline Silicon Films and Application to Large-Area Display

基于多晶硅薄膜的发光器件的研制及其在大面积显示中的应用

基本信息

批准号：
08555083
负责人：
KOSHIDA Nobuyoshi
金额：
$ 11.33万
依托单位：
Tokyo University of Agriculture and Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
1996
资助国家：
日本
起止时间：
1996 至 1997
项目状态：
已结题

项目摘要

To develop large-area light-emissive flat panel display devices, light-emitting porous silicon diodes have been fabricated using studied for poly-crystalline silicon (poly-Si) films. The characteristics of poly-Si devices as light-emitting diodes (LED) are clarified. The major results and their significances are summarized as follows.1. Process technology of poly-Si-based LEDsAppropriate dervice confifuration of poly-Si diodes as LEDs was determined by detailed investigations of the anodization conditions of poly-Si films, sstructuring of the active layr, formation of injection electrodes. On a basis of these studies, poly-Si LEDs with an efficiency comparable to that of conventional porous silicon diodes foramed on single-crystlline substrates were successfully obtained.2. Charaacteristics of poly-Si-based LEDsForm some electrical and optical measurements, it has been shown that the electroluminescence (EL) in porous poly-Si diodes is based on the same injection mechanism as in the case of single-crystalline substrates. Advantageous features of porous poly-Si diodes over the conventional porous silicon ones were made clear regarding the stability and uniformity of the EL emission.3. Fundamental aspects toward large-area display devicesThe compatibilty of poorous poly-Si LEDs with a poly-Si thin film transistor was examined using a planar-type poly-Si TFT fabricated on the glass substrate based on a laser annealing technique. As the gate voltage is increased under a constant drain voltage, the driving current was supplied into the LRDs, and then significant EL emission was observed through the top contact. This result indicates the posiibility of porous poy-Si as an active component for integrated LED arrays on glass substrates with a large-area.

为了开发大面积发光平板显示器件，采用多晶硅薄膜制备了多孔硅发光二极管。阐明了多晶硅器件作为发光二极管(LED)的特点。本文的主要结果和意义概括如下：1.本文的主要研究成果和研究意义。多晶硅LED的工艺技术通过对多晶硅薄膜的阳极氧化条件、有源层的结构、注入电极的形成等方面的详细研究，确定了适合作为LED的多晶硅二极管的工艺配置。在这些研究的基础上，成功地获得了与传统单晶衬底多孔硅二极管相当的效率的多晶硅LED。多孔多晶硅发光二极管的特性通过一些电学和光学测量表明，多孔多晶硅二极管的电致发光(EL)是基于与单晶衬底相同的注入机制。在发光的稳定性和均匀性方面，说明了多孔多晶硅二极管相对于传统多孔硅二极管的优势。研究了多孔多晶硅LED与多晶硅薄膜晶体管的兼容性，使用基于激光退火法在玻璃衬底上制备的平面型多晶硅TFT来检测多孔多晶硅LED与多晶硅薄膜晶体管的兼容性。当栅极电压在恒定的漏极电压下增加时，驱动电流被提供给LRD，然后通过顶部接触观察到显著的EL发射。这一结果表明，多孔POY-Si作为大面积玻璃基板上集成LED阵列的有源元件是可能的。