Clarifying the Photonic, Electronic, and Acoustic Characteristics of Quantum-sized Silicon for Functional Integration

阐明用于功能集成的量子尺寸硅的光子、电子和声学特性

基本信息

项目摘要

Photonic, electronic, and acoustic properties of quantum-sized silicon have been studied for their characterizations and device applications toward the functional integration. The results and significances are summarized as follows.(1) Development of photonic devices based on enhanced luminescence- It was confirmed by combination of anneal with surface passivation that both the efficiency and the stability were much improved, and then the evidence of energy transfer in nanosilicon was clearly detected by analyses of photoexcitation-relaxation process.- Process technologies for stable blue luminescence, optical cavity, photoconduction, nanowire, and 3-dimensional periodic nanostructure were developed as components of silicon photonics.(2) Applications of ballistic electron emitter- The usefulness of nanosilicon ballistic electron emitter as means of negative ion source and hydrogen gas generation was shown by operation in air and in pure water, respectively.- The applicability in vacuum was also demonstrated by the use as planar cold cathode for parallel electron-beam lithography and ultra-high-sensitivity image sensing.(3) Improved ultrasonic emission and device applications- The appropriate design and driving techniques compatible with efficient and stable ultrasonic emission from nanosilicon device were developed on a basis of systematic analyses.- Due to the flat frequency response, the nanosilicon emitter was successfully applied to sound source for studies on bio-acoustic communication and digital information transmission.(4) Implementation of functional integration- The device concept and process flow were given for monolithic integration of photonic, electronic, and acoustic functions into silicon substrate.- Actuality of this approach was demonstrated by prototyping two devices : sound-emissive electroluminescent diode and surface-emitting device with ballistic excitation mechanism.
已经研究了量子尺寸硅的光子,电子和声学特性,以涉及其对功能整合的特征和设备应用。 (1)基于增强的发光的光子设备的开发总结了结果和意义。通过将退火与表面钝化的结合结合确认,效率和稳定性都得到了很大改善,然后通过良好的质量启示处理良好的过程来清楚地检测到纳米层中能量传递的证据。纳米线和3维周期性纳米结构是作为硅光子学的组成部分开发的。(2)弹道电子发射极的应用 - 纳米硅弹道电子发射器的有用性分别由空气中的运行和纯种的纯种,同时在纯种中使用。 and ultra-high-sensitivity image sensing.(3) Improved ultrasonic emission and device applications- The appropriate design and driving techniques compatible with efficient and stable ultrasonic emission from nanosilicon device were developed on a basis of systematic analyses.- Due to the flat frequency response, the nanosilicon emitter was successfully applied to sound source for studies on bio-acoustic communication and digital information transmission.(4) Implementation of functional整合 - 设备概念和过程流以将光子,电子和声学功能整合到硅底物中的单片整合。-通过使用两个设备的原型来证明这种方法的实际性:使用弹性激发机制的声音发电性电动发光二极管和表面发射器件。

项目成果

期刊论文数量(126)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Semiconductor Quantum Structures
半导体量子结构
  • DOI:
  • 发表时间:
    2007
  • 期刊:
  • 影响因子:
    0
  • 作者:
    N. Koshida;他
  • 通讯作者:
「研究成果報告書概要(和文)」より
摘自《研究结果报告摘要(日文)》
  • DOI:
  • 发表时间:
    2005
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Kawauchi;et. al.;Nishimura et al.;Dezawa et al.;Yoshizawa et al.;星野 幹雄;星野 幹雄
  • 通讯作者:
    星野 幹雄
Improved Photoconduction Effects of Nanometer-Sized Si Dot Multilayers, Int. Conf. on Solid State Devices and Materials, Tsukuba, 2007, pp. 1116-1117
纳米级硅点多层膜光电导效应的改善,Int。
  • DOI:
  • 发表时间:
    2007
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Y.;Hirano;S.;Yamazaki;N.;Koshida
  • 通讯作者:
    Koshida
Polarization memory in enhanced photoluminescence of porous silicon asa trace of energy transfer to embedded laser dye molecules
多孔硅增强光致发光中的偏振记忆作为能量转移到嵌入激光染料分子的痕迹
  • DOI:
  • 发表时间:
    2008
  • 期刊:
  • 影响因子:
    0
  • 作者:
    A. Chouket;H. Koyama;B. Gelloz;H. Elhouichet;M. Oueslati;N. Koshida
  • 通讯作者:
    N. Koshida
Reproduction of mouse-pup ultrasonic vocalizations by nanocrystalline silicon thermoacoustic emitter
  • DOI:
    10.1063/1.2168498
  • 发表时间:
    2006-01
  • 期刊:
  • 影响因子:
    4
  • 作者:
    T. Kihara;Toshihiro Harada;Masahiro Kato;Kiyoshi Nakano;Osamu Murakami;T. Kikusui;N. Koshida
  • 通讯作者:
    T. Kihara;Toshihiro Harada;Masahiro Kato;Kiyoshi Nakano;Osamu Murakami;T. Kikusui;N. Koshida
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KOSHIDA Nobuyoshi其他文献

KOSHIDA Nobuyoshi的其他文献

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{{ truncateString('KOSHIDA Nobuyoshi', 18)}}的其他基金

Applications of nanosiicon ballistic emitter in liquids, gases, and solids
纳米硅弹道发射器在液体、气体和固体中的应用
  • 批准号:
    21241037
  • 财政年份:
    2009
  • 资助金额:
    $ 31.28万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Control of physical properties induced in silicon nanostructure and device applications
控制硅纳米结构和器件应用中引起的物理特性
  • 批准号:
    18063007
  • 财政年份:
    2006
  • 资助金额:
    $ 31.28万
  • 项目类别:
    Grant-in-Aid for Scientific Research on Priority Areas
Ballistic Electron Effect in Nanocrystalline Silicon and its Device Applications
纳米晶硅中的弹道电子效应及其器件应用
  • 批准号:
    15201031
  • 财政年份:
    2003
  • 资助金额:
    $ 31.28万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Development of Silicon-Based Surface-Emitting Ballistic Electron Source and Its Application to Flat Panel Display
硅基面发射弹道电子源的研制及其在平板显示中的应用
  • 批准号:
    13355016
  • 财政年份:
    2001
  • 资助金额:
    $ 31.28万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
A Study on Haptic Interfaces
触觉界面研究
  • 批准号:
    11450160
  • 财政年份:
    1999
  • 资助金额:
    $ 31.28万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Development and Photonic Integration of Efficient and Stable Silicon-Based LED
高效稳定硅基LED的开发与光子集成
  • 批准号:
    10355015
  • 财政年份:
    1998
  • 资助金额:
    $ 31.28万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Development of Light-Emitting Devices Based on Poly-crystalline Silicon Films and Application to Large-Area Display
基于多晶硅薄膜的发光器件的研制及其在大面积显示中的应用
  • 批准号:
    08555083
  • 财政年份:
    1996
  • 资助金额:
    $ 31.28万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Study of Visible Luminescence Mechanism in Porous Silicon and Its Devvelopment into Silicon-Based Optoelectronic Integration
多孔硅可见光发光机理研究及其硅基光电集成开发
  • 批准号:
    07405016
  • 财政年份:
    1995
  • 资助金额:
    $ 31.28万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
Ultafine Lithography by Oxide Ion Resists and Its Applications.
氧化物离子抗蚀剂超精细光刻及其应用。
  • 批准号:
    01550304
  • 财政年份:
    1989
  • 资助金额:
    $ 31.28万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (C)

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