Clarifying the Photonic, Electronic, and Acoustic Characteristics of Quantum-sized Silicon for Functional Integration
阐明用于功能集成的量子尺寸硅的光子、电子和声学特性
基本信息
- 批准号:18206039
- 负责人:
- 金额:$ 31.28万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (A)
- 财政年份:2006
- 资助国家:日本
- 起止时间:2006 至 2007
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Photonic, electronic, and acoustic properties of quantum-sized silicon have been studied for their characterizations and device applications toward the functional integration. The results and significances are summarized as follows.(1) Development of photonic devices based on enhanced luminescence- It was confirmed by combination of anneal with surface passivation that both the efficiency and the stability were much improved, and then the evidence of energy transfer in nanosilicon was clearly detected by analyses of photoexcitation-relaxation process.- Process technologies for stable blue luminescence, optical cavity, photoconduction, nanowire, and 3-dimensional periodic nanostructure were developed as components of silicon photonics.(2) Applications of ballistic electron emitter- The usefulness of nanosilicon ballistic electron emitter as means of negative ion source and hydrogen gas generation was shown by operation in air and in pure water, respectively.- The applicability in vacuum was also demonstrated by the use as planar cold cathode for parallel electron-beam lithography and ultra-high-sensitivity image sensing.(3) Improved ultrasonic emission and device applications- The appropriate design and driving techniques compatible with efficient and stable ultrasonic emission from nanosilicon device were developed on a basis of systematic analyses.- Due to the flat frequency response, the nanosilicon emitter was successfully applied to sound source for studies on bio-acoustic communication and digital information transmission.(4) Implementation of functional integration- The device concept and process flow were given for monolithic integration of photonic, electronic, and acoustic functions into silicon substrate.- Actuality of this approach was demonstrated by prototyping two devices : sound-emissive electroluminescent diode and surface-emitting device with ballistic excitation mechanism.
量子硅的光子、电学和声学特性已被研究用于功能集成的表征和器件应用。研究结果和意义概括如下:(1)基于增强发光的光子器件的研制--通过退火和表面钝化相结合的方法,证实了效率和稳定性都得到了很大的提高,然后通过对光激发-弛豫过程的分析,清楚地检测到了纳米硅中能量转移的证据。-开发了稳定的蓝色发光、光学腔、光导、纳米线和三维周期性纳米结构的工艺技术,作为硅光子学的组成部分。(2)弹道电子发射器的应用-通过在空气和纯水中的运行,展示了纳米硅弹道电子发射器作为负离子源和氢气产生的有效性,(3)改进了超声发射和器件的应用--在系统分析的基础上,开发了与纳米硅器件高效稳定的超声波发射兼容的适当设计和驱动技术。-由于频率响应平坦,纳米硅发射器成功地应用于声源,用于生物声通信和数字信息传输的研究。(4)功能集成的实现--给出了光子、电子、并通过两种器件:声发射电致发光二极管和具有弹道激励机制的表面发射器件的原型验证了这种方法的现状。
项目成果
期刊论文数量(126)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Polarization memory in enhanced photoluminescence of porous silicon asa trace of energy transfer to embedded laser dye molecules
多孔硅增强光致发光中的偏振记忆作为能量转移到嵌入激光染料分子的痕迹
- DOI:
- 发表时间:2008
- 期刊:
- 影响因子:0
- 作者:A. Chouket;H. Koyama;B. Gelloz;H. Elhouichet;M. Oueslati;N. Koshida
- 通讯作者:N. Koshida
Improved Photoconduction Effects of Nanometer-Sized Si Dot Multilayers, Int. Conf. on Solid State Devices and Materials, Tsukuba, 2007, pp. 1116-1117
纳米级硅点多层膜光电导效应的改善,Int。
- DOI:
- 发表时间:2007
- 期刊:
- 影响因子:0
- 作者:Y.;Hirano;S.;Yamazaki;N.;Koshida
- 通讯作者:Koshida
「研究成果報告書概要(和文)」より
摘自《研究结果报告摘要(日文)》
- DOI:
- 发表时间:2005
- 期刊:
- 影响因子:0
- 作者:Kawauchi;et. al.;Nishimura et al.;Dezawa et al.;Yoshizawa et al.;星野 幹雄;星野 幹雄
- 通讯作者:星野 幹雄
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KOSHIDA Nobuyoshi其他文献
KOSHIDA Nobuyoshi的其他文献
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{{ truncateString('KOSHIDA Nobuyoshi', 18)}}的其他基金
Applications of nanosiicon ballistic emitter in liquids, gases, and solids
纳米硅弹道发射器在液体、气体和固体中的应用
- 批准号:
21241037 - 财政年份:2009
- 资助金额:
$ 31.28万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Control of physical properties induced in silicon nanostructure and device applications
控制硅纳米结构和器件应用中引起的物理特性
- 批准号:
18063007 - 财政年份:2006
- 资助金额:
$ 31.28万 - 项目类别:
Grant-in-Aid for Scientific Research on Priority Areas
Ballistic Electron Effect in Nanocrystalline Silicon and its Device Applications
纳米晶硅中的弹道电子效应及其器件应用
- 批准号:
15201031 - 财政年份:2003
- 资助金额:
$ 31.28万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Development of Silicon-Based Surface-Emitting Ballistic Electron Source and Its Application to Flat Panel Display
硅基面发射弹道电子源的研制及其在平板显示中的应用
- 批准号:
13355016 - 财政年份:2001
- 资助金额:
$ 31.28万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
A Study on Haptic Interfaces
触觉界面研究
- 批准号:
11450160 - 财政年份:1999
- 资助金额:
$ 31.28万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Development and Photonic Integration of Efficient and Stable Silicon-Based LED
高效稳定硅基LED的开发与光子集成
- 批准号:
10355015 - 财政年份:1998
- 资助金额:
$ 31.28万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Development of Light-Emitting Devices Based on Poly-crystalline Silicon Films and Application to Large-Area Display
基于多晶硅薄膜的发光器件的研制及其在大面积显示中的应用
- 批准号:
08555083 - 财政年份:1996
- 资助金额:
$ 31.28万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Study of Visible Luminescence Mechanism in Porous Silicon and Its Devvelopment into Silicon-Based Optoelectronic Integration
多孔硅可见光发光机理研究及其硅基光电集成开发
- 批准号:
07405016 - 财政年份:1995
- 资助金额:
$ 31.28万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Ultafine Lithography by Oxide Ion Resists and Its Applications.
氧化物离子抗蚀剂超精细光刻及其应用。
- 批准号:
01550304 - 财政年份:1989
- 资助金额:
$ 31.28万 - 项目类别:
Grant-in-Aid for General Scientific Research (C)
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