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Ultafine Lithography by Oxide Ion Resists and Its Applications.

氧化物离子抗蚀剂超精细光刻及其应用。

基本信息

批准号：
01550304
负责人：
KOSHIDA Nobuyoshi
金额：
$ 1.15万
依托单位：
Tokyo University of Agriculture and Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (C)
财政年份：
1989
资助国家：
日本
起止时间：
1989 至 1990
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-01550304/
关键词：
microlithography inorganic resist focused in beam ULSI process thin amorphous film transition metal oxide metallization refractory metals 微細加工リソグラフィ高融点金属

项目摘要

(1) Microlithographic PropertiesThin amorphous films of WO_3, MoO_3, V_2O_5 and a mixture theirof were formed on Si wafers and exposed to a 20-70 keV Ga^+ FIB. Development after writing was performed by chemical etching. The basic properties of these films as an inorganic resist were evaluated in terms of the resist sensitivity, the contrast, the dry etching durability of the delineated resist patterns and the selectivity with respect to Si. The details of the characteristics can be explained from the physical and chemical properties of the resist material.(2) Resist Mechanism and Limiting ResolutionThe resist mechanism was made clear by the analyses of the exposure characteristics, surface analyses of the exposed films and the electrical measurement. Studies of line exposure and measurements of the beam profile of the FIB indicate that the limiting resolution of this resist work is determined by the FIB diameter, owing to its high contrast capability.(3) Application StudiesThin amorphous films of MoO_3 were deposited by electron beam evaporation onto Si wafers, and were exposed to 30-50 keV Ga^+ FIB. Fine line patterns of MoO_3, developed by chemical etching after line exposure, were reduced to Mo by heat treatment in H_2 atmosphere. From measurements of the line width before and after reduction as a function of the ion dose, it was demonstrated that 50-100 nm width fine patterns of Mo can be formed on Si substrates. This technique is potentially useful for fabrication of lowerーsubmicron devices, quantum wire and X-ray mask.

(1)用20-70 keV的Ga^+离子束曝光，在Si基片上形成了WO_3、MoO_3、V_2O_5及其混合物的非晶薄膜。通过化学蚀刻进行写入后的显影。这些膜作为无机抗蚀剂的基本性能进行了评价的抗蚀剂灵敏度，对比度，干蚀刻的耐久性描绘的抗蚀剂图案和相对于Si的选择性。这些特性的细节可以从抗蚀剂材料的物理和化学性质来解释。(2)抗蚀剂机理和极限分辨率通过对曝光特性的分析、曝光膜的表面分析和电学测试，明确了抗蚀剂机理。线曝光和FIB的光束轮廓的测量的研究表明，这种抗蚀剂工作的极限分辨率是由FIB直径，由于其高对比度的能力。(3)应用实例用电子束蒸发法在硅基片上沉积了MoO_3非晶薄膜，并将其暴露于30-50 keV的Ga^+ FIB中。MoO_3线曝光后用化学腐蚀法显影出的细线图形，在H_2气氛中热处理还原为Mo。从作为离子剂量的函数的还原之前和之后的线宽的测量，证明可以在Si衬底上形成50-100 nm宽的Mo精细图案。该技术对低介电常数亚微米器件、量子线和X射线掩模的制备具有潜在的应用价值。