Development of Novel, High-Speed, and Environmentally-Friendly Thin Film Deposition Technology using Supercritical Carbon Dioxide Fluids

该项目旨在为使用超临界二氧化碳流体的高集成度和高功能设备提供一种新颖且环保的薄膜沉积技术。在这个项目中，我们开发了一种新的沉积处理器，可以像普通薄膜处理器一样独立控制沉积处理器。采用Cu螯合物氢还原化学沉积Cu薄膜，以期应用于ULSI金属化。发现Cu的沉积是通过Langmuir-Hinshelwood沉积机制进行的，氢的化学吸附是Cu生长的速率决定步骤。研究了沉积适形性和填隙能力。发现提高沉积速率和提高填隙能力的指导原则是促进氢的供应和化学吸附的顺利进行。未反应的沉积前驱体在沉积处理器的排气处收集，并对其进行净化以再利用/再循环。研究了Pt、Ru、ZnO等新的沉积化学。用于MEMS/NEMS应用的纳米元件，例如用于三维集成电路的纳米棒和通孔，都是用这些材料制造的，利用该技术的深度和高纵横比沉积能力。总之，我们已经完成了我们对这项技术的建议，并成功地开发了它的新应用。

This project was aimed to providing a novel and environmentally-friendly technology for depositing thin films for highly-integrated and highly-functioning device applications using supercritical carbon dioxide fluids.In this project, we have developed a new deposition processor that allows independent control of deposition processor that functions like common thin film processors. Hydrogen reduction chemistry of Cu chelates was employed to deposit Cu thin films, minding to apply to ULSI metallization. It was found that Cu deposition proceeds through Langmuir-Hinshelwood deposition mechanism and that hydrogen chemisorption is the rate-determining step for Cu growth. Deposition comformability and gap-filling capability were also studied with respect to the deposition mechanism. The guiding principles for increasing deposition rate and improving gap-fill capability were found to be to promote hydrogen supply and its smooth chemisorption. The unreacted deposition precursor was collected at the exhaust of the deposition processor and was purified for its reuse/recyling.New deposition chemistries were also studied such as for Pt, Ru, and ZnO deposition. Nano components for MEMS/NEMS applications, for instance, nano rods and thorough vias for 3-dimensional integrated circuits, were fabricated with these materials, availing deep and high-aspect ratio deposition capability of this technology.In summary, we have accomplished our proposals on this technology and have succeeded to develop its new applications.