Electronic Functions of Si modified with metal-organic complex

在本研究中，我们对二茂铁衍生物修饰的硅的基本电学性质进行了研究，以期阐明它们作为一种潜在的电荷存储材料应用于未来的存储器件。通过优化分子键合工艺，我们成功地在硅表面制备了乙烯基二茂铁、乙炔基二茂铁、二茂铁甲醛三种二茂铁衍生物的高质量单分子膜。这一结果使评估二茂铁单分子膜本身的电化学响应成为可能。

In this research, we have studied on fundamental electronic properties of Si modified with ferrocene derivatives in order to elucidate their potential as a charge storage material applicable to future memory devices. We have succeeded in preparing high quality monolayes of three types of ferrocene derivatives, that is, vinylferrocene, ethynylferrocene, ferrocenecarboxaldehyde, on Si by optimizing a molecular bonding process. This result enabled to evaluate electrochemical responses of the ferrocene monolayers themselves.