Development of the smart deposition process of amorphous carbon films due to the control of plasma process

利用多重内反射几何红外光谱(MIR-IRAS)研究了非晶态碳膜的等离子体增强化学气相沉积(PECVD)机理。如果使用甲烷等离子体，甲烷-碳氢化合物物种，如CH_2CH_3，是膜沉积的主要前体。在沉积过程中，前驱体释放的氢是薄膜生长所必需的。另一方面，如果使用乙撑等离子体，C2H等固相碳氢化合物是主要的前驱体。该物种可以通过加成反应沉积，而不需要氢的释放。乙烷等离子体的薄膜沉积速率高于甲烷等离子体。

We investigated plasma enhanced chemical vapor deposition (PECVD) mechanism of an amorphous carbon film with infrared spectroscopy in multiple internal reflection geometry (MIR-IRAS). If methane plasma is used, sp^-hydrocarbon species, such as CH_2CH_3, are main precursors, contributed to film deposition. In the deposition process the relases of hydrogen from the precursors is needed to film growth. On the other hand, sp-hydrocarbon species, such as C_2H are the main precursors if acethylene plasma used. The species can be deposited through addition reaction without the relase of hydrogen. Then, the film deposition rate is higher with acethylene plasma than with methane plasma.