Simulation Study of Long-Range Coulomb Interaction in Nano-Scale Devices

本文采用Monte Carlo模拟方法研究了双栅MOSFET结构下库仑相互作用对器件特性的影响及其物理机制。与电子之间的库仑相互作用的长程部分相关的潜在波动也研究了通过看在高掺杂区域的局部态密度。我们发现，即使在沟道结附近的高掺杂源极区内部，也有很强的电子流动，使电子处于高度非平衡状态。我们还发现，如果沟道长度收缩到10 nm以下，由于通过库仑相互作用的沟道电子的等离子体激元激发，器件特性强烈退化。

We investigate the effect of the Coulomb interaction on device characteristics and its physical mechanism under the double-gate MOSFET structures by Monte Carlo simulations which take into account of the Coulomb interaction accurately. Potential fluctuations associated with the long-range part of the Coulomb interaction among electrons are also studied by looking at the local density of states in high-doped regions. We find that there are strong electron flows even inside the high-doped source regions near the channel junctions so that electrons there are in highly off-equilibrium. We also find that device characteristics strongly degrade if the channel length shrinks below 10 nm due to plasmon excitations by channel electrons through the Coulomb interaction.