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Elucidation of Mechanism of Film Hardening of Amorphous CarbonsBased on the High-Resolution Laser Spectroscopy

Elucidation of Mechanism of Film Hardening of Amorphous CarbonsBased on the High-Resolution Laser Spectroscopy
基于高分辨率激光光谱阐明非晶碳膜硬化机理
批准号:
22560020
负责人:
ITO Haruhiko
金额:
$3.08万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2010
资助国家:
日本
项目状态:
已结题
起止时间:
2010 至 2012

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中文摘要
翻译
在本工程中得到以下结果:(1)鉴定了非晶态氮化碳薄膜中氮原子的前驱体,成功制备了高氮含量的薄膜。(2)阐明了ECR等离子体和稀有气体微波放电流中起始分子的分解机理。(3)阐明了射频偏置电压作用下非晶碳及相关材料薄膜硬化的机理。
英文摘要
The following results are obtained in this project.(1) The precursors of the nitrogen atoms in amorphous carbon nitride films are identified, and films possessing high-nitrogen contents are successfully fabricated.(2) The mechanism of the decomposition of the starting molecules are elucidated for the ECR plasma and microwave-discharge flow of rare gases.(3) Mechanism of the film hardening of amorphous carbon and related materials are elucidated upon the application of radio-frequency bias voltage to the substrates.
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Source of nitrogen atoms of amorphous carbon nitride films fabricated with microwave-plasma CVD processes:
采用微波等离子体CVD工艺制备的非晶氮化碳薄膜的氮原子来源:
DOI: 10.14723/tmrsj.38.31
发表时间: 2013
期刊: Transactions-Materials Research Society of Japan
影响因子: --
作者: [Haruhiko Ito, A. Yamamoto, Tsuneo Suzuki, H. Saitoh]
通讯作者: H. Saitoh
Precursors of a-CNx(:H) films from the decompositions of BrCN and CH3CN with the discharged products of Ar
BrCN 和 CH3CN 分解以及 Ar 放电产物产生的 a-CNx(:H) 薄膜的前体
DOI: 10.1016/j.diamond.2011.12.026
发表时间: 2012
期刊: Diamond and Related Materials
影响因子: 4.1
作者: [H. Ito, A. Yamamoto, H. Araki, and A. Wada]
通讯作者: and A. Wada
Local structural analysis of a-SiCx:H films formed by decomposition of tetramethylsilane in microwave discharge flow of Ar
Ar微波放电流中四甲基硅烷分解形成的a-SiCx:H薄膜的局部结构分析
DOI: 10.1016/j.diamond.2011.01.020
发表时间: 2011
期刊: Diamond and Related Materials
影响因子: 4.1
作者: [A. Wada, T. Ogaki, M. Niibe, M. Tagawa, H. Saitoh, K. Kanda, H. Ito]
通讯作者: H. Ito
Arのマイクロ波放電フロー中でのヘキサメチルジシランの分解を用いた a-SiC_x:H膜の形成」高周波プラズマCVDによる高窒素含有a-CN_x:H 薄膜の形成
“利用Ar微波放电流中六甲基乙硅烷的分解来形成a-SiC_x:H膜” “通过高频等离子体CVD形成高氮含量a-CN_x:H薄膜”
DOI: --
发表时间: 2013
期刊:
影响因子: --
作者: [熊倉基起, 斎藤秀 俊、伊藤治彦]
通讯作者: 斎藤秀 俊、伊藤治彦
共 51 条
    Dynamics of formation of ultra-hard thin films of amorphous carbon nitride by energy-controlled ion bombardment
    • 批准号:
      19560699
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $3.0万
    • 财政年份:
      2007
    • 负责人:
      ITO Haruhiko
    • 依托单位:
    Control of hydrogen content in the carbon nitride materials and its development to the field emission devices based on the high-resolution laser spectroscopy
    • 批准号:
      14550721
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $2.62万
    • 财政年份:
      2002
    • 负责人:
      ITO Haruhiko
    • 依托单位:
    Establishment of coating technology of superhard carbon nitrides films based on the measurement of the surface reaction probabilities.
    • 批准号:
      13555197
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $7.1万
    • 财政年份:
      2001
    • 负责人:
      ITO Haruhiko
    • 依托单位:
    Establishment of the principle of the synthesis of the super-hard carbon nitride films based on the diagnosis by the threshold ionization mass spectrometry
    • 批准号:
      11650760
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $2.37万
    • 财政年份:
      1999
    • 负责人:
      ITO Haruhiko
    • 依托单位:
    海外基金