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Development of process equipment for deposition of amorphous carbon films by pulsed plasmas with high plasma density

Development of process equipment for deposition of amorphous carbon films by pulsed plasmas with high plasma density
高等离子体密度脉冲等离子体沉积非晶碳薄膜工艺装备的研制
批准号:
23560324
负责人:
KIMURA TAKASHI
金额:
$3.41万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2011
资助国家:
日本
项目状态:
已结题
起止时间:
2011 至 2013

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中文摘要
翻译
非晶碳膜在工业领域中有着广泛的应用。本研究采用高功率脉冲磁控溅射(HiPIMS)等高等离子体密度的脉冲等离子体沉积非晶碳薄膜。氩磁控溅射法沉积的薄膜硬度高于直流磁控溅射法沉积的薄膜,最高可达18GPa。此外,为了进一步改善薄膜的性能,HiPIMS还含有活性气体,从而沉积了薄的非晶碳膜。采用氩气/氮气HiPIMS沉积非晶态氮化碳薄膜。在含氮量为2.5%时,膜的硬度比不含氮时高1.3倍左右。非晶氢化碳薄膜也可通过反应氩/甲烷HiPIMS沉积。该方法包括物理气相沉积和等离子体增强化学气相沉积。随着甲烷馏分的增加,沉积速率急剧增加。
英文摘要
Amorphous carbon films have several applications in various industrial areas. In this study, thin amorphous carbon films are deposited by pulsed plasmas with high plasma density such as high power impulse magnetron sputtering (HiPIMS). The hardness of the films deposited by argon HiPIMS is higher than that deposited by direct current magnetron sputtering and the maximum reaches 18GPa. Moreover, thin amorphous carbon films are deposited by HiPIMS containing reactive gases in order to achieve further improvement of the film properties. Thin amorphous carbon nitride films are deposited by argon/nitrogen HiPIMS. The hardness of the films at the nitrogen fraction of 2.5% is about 1.3 times higher than that without nitrogen. Amorphous hydrogenated carbon films are also deposited by reactive argon/methane HiPIMS. This method includes both physical vapor deposition and plasma enhanced chemical vapor deposition. Deposition rate abruptly increases with the increase in methane fraction.
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会议论文
Deposition of amorphous carbon films by inductively coupled CH4 plasmas
电感耦合 CH4 等离子体沉积非晶碳膜
DOI: --
发表时间:
期刊:
影响因子: --
作者: [難波晃平, 横水康伸, 松村年郎, Takashi Kimura]
通讯作者: Takashi Kimura
DOI: --
发表时间: 2013
期刊:
影响因子: --
作者: [Masato Nakamura, Junya Sekikawa, 木村高志]
通讯作者: 木村高志
Properties of inductively coupled rf CH_4/H_2 plasmas : experiments and global model
电感耦合射频CH_4/H_2等离子体的特性:实验和全局模型
DOI: --
发表时间: 2012
期刊: Japanese Journal of Applied Physics
影响因子: 1.5
作者: [中村真人, 関川純哉, T. Kimura and H. Kasugai]
通讯作者: T. Kimura and H. Kasugai
Deposition of amorphous carbon films by inductively coupled CH_4 plasmas
电感耦合CH_4等离子体沉积非晶碳薄膜
DOI: --
发表时间: 2012
期刊:
影响因子: --
作者: [Masato Nakamura, Junya Sekikawa, Takashi Kimura and Ryotaro Nishimura, Junya Sekikawa, Takashi Kimura]
通讯作者: Takashi Kimura
共 14 条
    Host factors affecting the susceptibility of neurons to flavivirus: an approach from cellular differentiation
    • 批准号:
      26660222
    • 项目类别:
      Grant-in-Aid for Challenging Exploratory Research
    • 资助金额:
      $2.41万
    • 财政年份:
      2014
    • 负责人:
      KIMURA TAKASHI
    • 依托单位:
    Generation of transgenic mice expressing equine herpesvirus-1 receptor and its application for antiviral strategies
    • 批准号:
      24380162
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $11.07万
    • 财政年份:
      2012
    • 负责人:
      KIMURA TAKASHI
    • 依托单位:
    海外基金