CDT Compound Semiconductor Physics (PhD Progression 1+3)

显示器的可见发射体是IQE研发的一个焦点，在世界范围内引起了相当大的兴趣。PHD将涵盖用于下一代显示器(200 mm基板)的RGB微型LED以及激光器。工作将包括设计合适的层结构，生产新的快速制造方法以提供自动和快速的表征，并比较不同方法的性能、可制造性和环境足迹。例如，红色发射器可以使用GaInP量子阱制作，并生长在GaAs或Ge 200 mm衬底上(世界第一)，或者使用InGaN微LED，这可能更容易与蓝色和绿色集成。就个人而言，前者可能更容易制造，但后者可能有更好的环境足迹。工作将包括生命周期分析，以确定全面RGB显示的最佳环境方法。其他挑战包括内部和外部量子效率、视角和集成的层架构。InGaN激光器有几种潜在的策略，我们应该将单片腔体结构获得的性能与例如耦合高精细氮化硅腔体的半导体放大器进行比较。我们期待着团队之间的密切合作和世界领先的开发人员对设计、增长和制造之间的复杂关系的理解，以创建世界领先的高性能和环境可持续的技术。

Visible emitters for Displays are a focus of IQEs R&D and of considerable interest worldwide. The PhD will cover RGB micro-LEDs for next generation displays (on 200mm substrates) as well as lasers. Work will involve designing suitable layer structures, producing new fast-fabrication approaches to provide automated and rapid characterisation and comparing the performance, manufacturability and environmental footprint of different approaches. For example, red-emitters could be produced using GaInP QWs and grown on GaAs or Ge 200mm substrates (world-first) or using InGaN micro-LEDs, which could be easier to integrate with blue and green. Individually the former is probably easier to manufacture but the latter probably has a better environmental footprint. Work will include Life Cycle Analysis to determine the best environmental approach for the full RGB display. Other challenges include internal and external quantum efficiency, viewing angle and layer architectures for integration. There are several potential strategies for InGaN lasers and we should compare performance obtained with monolithic cavity structures against e.g. semiconductor amplifiers coupled with high-finesse silicon-nitride cavities. We envisage close-cooperation between the team and the development of world-leading understanding of the complex relationships between design, growth and fabrication to create a world-leading technology that is high-performance and environmentally-sustainable.