Fabrication and monolithic integration of III-V semiconductor photonic devices using impurity-free interdiffusion

使用无杂质互扩散的III-V族半导体光子器件的制造和单片集成。本计画的目标是利用原子互扩散技术来实现砷化镓与磷化铟基光子元件的整合。该项目将利用对GaAs基系统中原子迁移过程的关键理解，并采用新颖的激光器设计。此外，阐明InP基系统中更复杂的互扩散机制将是器件集成的先导。本计画也旨在了解量子点结构中的相互扩散机制，这对于高效能的光电子元件非常重要。新型光子集成电路（PIC）的制造将产生可申请专利的技术，并增强澳大利亚的半导体光电和光子产业。

Fabrication and monolithic integration of III-V semiconductor photonic devices using impurity-free interdiffusion. The objective of this project is to achieve the integration of GaAs- and InP-based photonic devices using the atomic interdiffusion technique. The project will use the key understanding of the atomic relocation process in the GaAs-based system, with novel laser designs. Furthermore, elucidating the more complicated interdiffusion mechanism in the InP-based system will be a precursor to device integration. This project also aims to understand the interdiffusion mechanism in quantum dot structures, which are important for high performance optoelectronic devices. The fabrication of novel photonic integrated circuits (PICs) will generate patentable technology, and enhance Australia's semiconductor optoelectronic and photonic industry.