Ultrahigh efficiency green and red color InGaN nanowires for applications in high power projectors

本项目涉及大功率、高效率、高可靠性Ga（In）N绿色的开发 (530至540 nm）和红光（620 nm）发射器，适用于科视Christie的高亮度投影机 加拿大数字系统公司，高功率投影机的领先制造商。目前，Xenon 灯已广泛用于投影仪应用，然而，投影仪应用的缺点是成本高、非常低 能量转换效率和非常短的寿命。尽管近单位效率已在 GaN基蓝光发光二极管（LED）和激光器，这种高效率在 绿色/红色发射体，由于InN和GaN之间的大晶格失配（~ 11%）。在这个项目中，在 与加拿大科视Christie Digital Systems Inc.的研究工程师合作，我们建议发展 具有高内量子效率的InGaN/GaN线中点核壳纳米线异质结构 在绿色和红色光谱范围内具有高效率（>80%）和高光提取效率（>90%）。更 重要的是，我们的目标是在高功率激发条件下（~ 10 kW/cm 2，或 更高）。散热和热管理也将针对高功率操作进行优化。的 外延生长和器件制造将在麦吉尔大学进行，光学 在加拿大科视Christie Digital Systems Inc.进行的特性、集成和测试。（基奇纳， ON）。该项目将为加拿大科视Christie Digital Systems Inc.带来巨大利益。通过探索 替代发光材料的高功率投影仪应用。该项目的成功将使 科视Christie Digital Systems Canada Inc.的制造中心基奇纳，ON开发新产品， 将能源消耗减少到原来的2 - 5倍，并且可以消除复杂的热处理设备的使用， 管理该项目将资助2名博士后研究员和4名博士生。他们将接受训练 在InGaN纳米线材料和纳米光子学的各个方面，包括设计，生长，结构和 光学表征，在大学和工业环境。

This project is related to the development of high power, high efficiency, and highly reliable Ga(In)N green (530 to 540 nm) and red (620 nm) light emitters that are suitable for high brightness projectors for Christie Digital Systems Canada Inc., a leading manufacturer of high power projectors. At the present time, Xenon lamps have been widely used for projector applications, which, however, suffer from high cost, very low energy conversion efficiency and very short lifetime. Albeit near-unity efficiency has been demonstrated in GaN-based blue light emitting diodes (LEDs) and lasers, such high efficiency has not been possible in green/red emitters, due to the large lattice mismatch (~ 11%) between InN and GaN. In this project, in collaboration with research engineers in Christie Digital Systems Canada Inc., we propose to develop InGaN/GaN dot-in-a-wire core-shell nanowire heterostructures that can exhibit high internal quantum efficiency (>80%) and high light extraction efficiency (>90%) in the green and red spectral range. More importantly, we aim to demonstrate such high efficiency at high power excitation conditions (~ 10 kW/cm2, or higher). The heat dissipation and thermal management will also be optimized for high power operation. The epitaxial growth and device fabrication will be conducted at McGill University, with the optical characterization, integration, and testing being performed in Christie Digital Systems Canada Inc. (Kitchener, ON). This project will bring tremendous benefits to Christie Digital Systems Canada Inc. by exploring alternative light emitting materials for its high power projector applications. Success of this project will enable Christie Digital Systems Canada Inc.'s manufacturing center in Kitchener, ON to develop new products that can reduce the energy consumption by a factor of two to five and can eliminate the use of sophisticated thermal management. This project will fund 2 postdoctoral research fellows and 4 PhD students. They will be trained on all aspects of the InGaN nanowire materials and nanophotonics, including design, growth, structural and optical characterization, in both university and industrial settings.