Lattice-Mismatched Liquid Phase Epitaxy

几十年来，研究人员局限于设计与市售基板晶格匹配的器件；然而，最近，研究人员已经学会了如何设计一些晶格不匹配。这项工作产生了最先进的应变硅晶体管，高效（打破世界纪录）太阳能电池和获得诺贝尔奖的led。在这项研究计划中，PI将开发先进的液相外延（LPE是生产高质量半导体的最便宜的方法）技术，以支持和实现先进的半导体设备。在高质量材料集成领域工作了17年，PI已经展示了该提案的基本方面，以发展高质量的锗硅，这将为第三代光伏和其他最先进的设备奠定坚实的基础。他现在想用LPE演示这些技术。分配给该项目的4名博士生和10名本科生将在半导体材料生长、器件制造以及材料和器件表征方面获得宝贵而广泛的经验。本提案中描述的技术可以应用于无数的设备，包括大面积电子设备（如太阳能电池或显示器）、计算机处理器和电信。这项工作有望通过引入先进技术和降低最先进设备的成本来振兴LPE领域。

For decades researchers were limited to designing devices that were lattice-matched to a commercially available substrate; more recently, however, researchers have learned how to design around some lattice mismatch. This work has resulted in state-of-the-art, strained-Si transistors, efficient (world-record breaking) solar cells, and nobel-prize-winning LEDs. In this research program, the PI will develop advanced Liquid Phase Epitaxy (LPE is the least expensive way to grow high-quality semiconductors.) techniques to support and enable advanced semiconductor devices. Having worked in high-quality materials integration for 17 years, the PI has demonstrated the fundamental aspects of this proposal to grow high-quality Ge on Si, which will build a sturdy foundation for third-generation photovoltaics and other state-of-the-art devices. He now wants to demonstrate these techniques using LPE. The 4 Ph.D. students and 10 undergraduate students assigned to this program will gain valuable and broad experience in semiconductor materials growth, device fabrcation as well as materials and device characterization. The technology described in this proposal can be applied to a myriad of devices including large area electronics (like solar cells or displays), computer processors, and telecommunications. This work is expected to revitalize the field of LPE by bringing advanced techniques and reduce the cost for state-of-the-art devices.