Ultra high quality transition metal dichalcogenide synthesis by molecular beam epitaxy for integrated light emitting diodes and ion sensitive transistors

二维材料是一类以原子单层形式存在的新材料，具有广泛的有用物理特性。虽然石墨烯是最知名的二维材料，但它是一种不适合电子产品的导体，这促使人们对半导体二维材料的开发进行了十年的研究。过渡金属二硫属化物（TMDC）和氮化硼（BN）是二维半导体，可以制成有用的器件，如发光二极管和晶体管。然而，在光子学和固态传感应用领域采用TMDC和BN的巨大挑战是开发高质量材料的制造工艺。我们建议在纳米技术和量子材料的交叉点直接解决这一先进制造挑战。我们将使用分子束外延（MBE）开发一种可扩展的超高质量二维材料制造方法，最终目标是展示：A）适用于电信应用的1.3-1.65µm发光二极管和B）适用于基因组测序的离子传感场效应晶体管。最高质量的传统半导体结构是通过MBE生长的，我们的目标是利用MBE生长的上级质量来解决工业在采用2-D材料时所面临的制造挑战。我们的团队由世界知名的MBE增长专家组成（Z. Mi）、原子分辨材料分析（G.波顿），和2-D材料（T。Szkopek）。我们与CIS Scientific Inc.合作，电子和光电子用硫属化物基材料的领先专家。我们还与NanoAcademic Technologies合作，NanoAcademic Technologies是纳米器件建模方面的领先专家，对器件结构的工程优化至关重要。这项工作将能够开发可扩展的二维半导体制造工艺，培养下一代半导体的高素质人才，并将为我们的加拿大企业合作伙伴提供经济机会，这些机会可以从二维材料开发的国际领导地位中实现。

2-D materials are a new class of materials that exist as atomic monolayers, and which possess a wide range of useful physical properties. While graphene is the most well known of the 2-D materials, it is a conductor that is unsuitable for electronics, spurring a decade of research into the development of semiconducting 2-D materials. The transition metal dichalcogenides (TMDCs) and boron nitride (BN) are 2-D semiconductors, which can be fashioned into useful devices such as light emitting diodes and transistors. A grand challenge for the adoption of TMDCs and BN in the application areas of photonics and solid state sensing however, is the development of a manufacturing process for high quality material. We propose here to directly address this advanced manufacturing challenge at the intersection of nanotechnology and quantum materials. We will use molecular beam epitaxy (MBE) to develop a scalable manufacturing approach for ultra high quality 2-D materials, with the end goal of demonstrating: A) 1.3-1.65µm light emitting diodes suitable for telecommunications applications and B) ion sensing field effect transistors suitable for genome sequencing. The highest quality conventional semiconductor structures are grown by MBE, and we aim to harness the superior quality of MBE growth to address the manufacturing challenge faced by industry in adopting 2-D materials. Our team is composed of world reknown experts in MBE growth (Z. Mi), atomic resolution material analysis (G. Botton), and 2-D materials (T. Szkopek). We are partnered with CIS Scientific Inc., leading experts in chalcogenide based materials for electronics and optoelectronics. We are also partnered with NanoAcademic Technologies, leading experts in nanoscale device modelling, essential to the engineering optimization of device structures. This work will enable the development of a scalable manufacturing process for 2-D semiconductors, will train highly qualified personnel in next generation semiconductors, and will provide our Canadian corporate partners with economic opportunities that can be realized from an international leadership position in 2-D materials development.