Selectively-doped Gallium-Arsenide Heterojunction Thin-Film Structures: Fabrication & Physics

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This research program studies the materials science and physics of the growth of very high-quality gallium arenide/aluminum gallium arsenide heterojunction thin-film structures using the molecular beam epitaxy (MBE) technique. The first objective of the research is to optimize the MBE growth of high-quality, selectively-doped interfaces and heterostructure thin films with minimal imperfections. Such structures will make accessible a new regime in semiconductor physics where new phenomena will result from electron-electron interactions as well as one- electron physics in the very long mean-free-path limit. Studies of these phenomena through quantum transport measurements are the second objective of the research.