Electron Transport in AlAs/GaAs Quasi Two-Dimensional Systems

AlAs/GaAs 准二维系统中的电子传输

• 批准号: 9971021
• 负责人: Mansour Shayegan
• 金额: $ 36万
• 依托单位: Princeton University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1999
• 资助国家: 美国
• 起止时间: 1999-04-01 至 2003-03-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9971021&HistoricalAwards=false
• 关键词: Electron; Transport; AlAs; GaAs; Quasi

9971021ShayeganThis project involves an experimental investigation of the materials science and physics of quantum-confined semiconductor heterostructures. The emphasis of the program is on both the fabrication, via molecular beam epitaxy technique, and the electronic transport measurements at low temperatures and high magnetic fields where electron-electron interaction and correlation effects dominate. The systems which are being studied, namely, novel, high-quality electron and hole systems in selectively-doped GaAs/AlGaAs heterojunction structures, are among the cleanest (lowest disorder) carrier systems available. Such structures provide a crucial and important test-bed for new many-body physics. The results can also have an impact on the realization of new devices whose fabrication and/or operation are based on semiconductor structures of similar type.%%%This is an advanced materials research program in low-dimensional semiconductor heterostructures where electron-electron interaction dominates the physical properties and often leads to new, unexpected phenomena. The program is at the cutting-edge of materials science and physics, and provides a unique training and research opportunity to the graduate students and postdoctoral associates.***

本项目涉及量子限制半导体异质结构的材料科学和物理实验研究。该计划的重点是通过分子束外延技术制造，以及在电子-电子相互作用和相关效应占主导地位的低温和高磁场下的电子输运测量。正在研究的系统，即选择性掺杂GaAs/AlGaAs异质结结构中的新型高质量电子和空穴系统，是可用的最干净（最低无序）载流子系统之一。这种结构为新的多体物理学提供了一个至关重要的试验台。该结果还可以对基于类似类型的半导体结构的制造和/或操作的新器件的实现产生影响。这是一个低维半导体异质结构的先进材料研究项目，其中电子-电子相互作用主导着物理性质，并经常导致新的，意想不到的现象。该项目处于材料科学和物理学的前沿，为研究生和博士后提供了独特的培训和研究机会